• Title/Summary/Keyword: $BaTiO_x$

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Electrical and interface characteristics of BST thin films grown by RF magnetron reactive sputtering (RF magnetron reactive sputtering 법으로 제작한 BST 박막의 전기적 및 계면 특성에 관한 연구)

  • 강성준;장동훈;유영섭
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.33-39
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    • 1998
  • The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

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Effect of double pinning mechanism in BSO-added GdBa2Cu3O7-x thin films

  • Oh, J.Y.;Jeon, H.K.;Lee, J.M.;Kang, W.N.;Kang, B.
    • Progress in Superconductivity and Cryogenics
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    • v.19 no.3
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    • pp.13-17
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    • 2017
  • We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.

Microstructure properties with variation of doped amount $Pr_{2}O_{3}$ of BSCT ceramics ($Pr_{2}O_{3}$ 첨가량에 따른 BSCT 세라믹의 미세구조 특성)

  • Noh, Hyun-Ji;Lee, Sung-Gap;Park, Sang-Man;Yun, Sang-Eun;Kim, Ji-Eun;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1283-1284
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    • 2007
  • The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

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Growth of Large Area BSTO Thin Films using Pulsed Laser Deposition (펄스레이저 증착법을 이용한 대면적 BSTO 박막의 성장)

  • Kang, Dae-Won;Kwak, Min-Hwan;Kang, Seong-Beom;Paek, Mun-Cheol;Choi, Sang-Kuk;Kim, Sung-Il;Ryu, Han-Cheol;Kim, Ji-Seon;Jeong, Se-Young;Chung, Dong-Chul;Kang, Kwang-Yong;Lee, Beong-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.249-249
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    • 2009
  • We have grown large area BSTO($(Ba_{1-x}Sr_x)TiO_3$) thin films (x=0.4) on 2 inch diameter MgO (001) single crystal substrates using a pulse laser deposition(PLD) system. Substrate temperature and oxygen pressure in the deposition chamber, and the laser optics for ablating a target have been controlled to obtain the uniform thickness and preferred orientation of the films. Results of x-ray diffraction and rocking curve analysis revealed that the BSTO films were grown on MgO substrates with a preferred orientation (002), and the full width half maximum of the rocking curve was measured to be 0.86 degree at optimum condition. Roughness of the films have been measured to be $3.42{\AA}$ rms by using atomic force microscopy. We have successfully deposited the large area BSTO thin films of $4000{\AA}$ thickness on 50 mm diameter MgO substrates.

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Studies on magneto-electro-elastic cantilever beam under thermal environment

  • Kondaiah, P.;Shankar, K.;Ganesan, N.
    • Coupled systems mechanics
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    • v.1 no.2
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    • pp.205-217
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    • 2012
  • A smart beam made of magneto-electro-elastic (MEE) material having piezoelectric phase and piezomagnetic phase, shows the coupling between magnetic, electric, thermal and mechanical under thermal environment. Product properties such as pyroelectric and pyromagnetic are generated in this MEE material under thermal environment. Recently studies have been published on the product properties (pyroelectric and pyromagnetic) for magneto-electro-thermo-elastic smart composite. Hence, the magneto-electro-elastic beam with different volume fractions, investigated under uniform temperature rise is the main aim of this paper, to study the influence of product properties on clamped-free boundary condition, using finite element procedures. The finite element beam is modeled using eight node 3D brick element with five nodal degrees of freedom viz. displacements in the x, y and z directions and electric and magnetic potentials. It is found that a significant increase in electric potential observed at volume fraction of $BaTiO_3$, $v_f$ = 0.2 due to pyroelectric effect. In-contrast, the displacements and stresses are not much affected.

High-Luminous Efficiency Full-Color Emitting $GdVO_4$:Eu, Er, Tm Phosphor Thin Films

  • Minami, Takatsugu;Miyata, Toshihiro;Mochizuki, Yuu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1091-1094
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    • 2004
  • High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

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Structural and dielectric properties of the BSCT thick films fabricated by the screen printing method (스크린 프린팅법으로 제작한 BSCT 후막의 구조적 특성과 유전적 특성)

  • Noh, Hyun-Ji;Lee, Sung-Gap;Lee, Chang-Gong;Nam, Sung-Pill;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.167-167
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    • 2008
  • The barium strontium calcium titanate powders were prepared by sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. And we investigated the structural and dielectric properties of BSCT thick films with the variation of sintering temperature. As a result of thermal analysis, BSCT polycrystalline perovskite phase was formed at around $660^{\circ}C$. The results of X-ray diffraction analysis were showed a cubic perovskite structure without presence of the second phase in all BSCT thick films. The average grain size and the thickness of the specimen sintered at $1450^{\circ}C$ were about 1.6 mm and 45 mm, respectively. The relative dielectric constant increased and the dielectric loss decreased with increasing the sintering temperature, the values of the BSCT thick films sintered at $1450^{\circ}C$ were 5641 and 0.4% at 1kHz, respectively.

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Chemical Mechanical Polishing Characteristics of BTO Thin Film for Vertical Sidewall Patterning of High-Density Memory Capacitor (고집적 메모리 커패시터의 Vertical Sidewall Patterning을 위한 BTO 박막의 CMP 특성)

  • Ko, Pil-Ju;Park, Sung-Woo;Lee, Kang-Yeon;Lee, Woo-Sun;Seo, Yong-Jin
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.3
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    • pp.116-121
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    • 2006
  • Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

Synthesis of Hollandite Powders as a Nuclear Waste Ceramic Forms by a Solution Combustion Synthesis (연소합성법을 이용한 방사성폐기물 고화체 Hollandite 분말 합성)

  • Choong-Hwan Jung;Sooji Jung
    • Korean Journal of Materials Research
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    • v.33 no.10
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    • pp.385-392
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    • 2023
  • A solution combustion process for the synthesis of hollandite (BaAl2Ti6O16) powders is described. SYNROC (synthetic rock) consists of four main titanate phases: perovskite, zirconolite, hollandite and rutile. Hollandite is one of the crystalline host matrices used for the disposal of high-level radioactive wastes because it immobilizes Sr and Lns elements by forming solid solutions. The solution combustion synthesis, which is a self-sustaining oxi-reduction reaction between a nitrate and organic fuel, generates an exothermic reaction and that heat converts the precursors into their corresponding oxide products in air. The process has high energy efficiency, fast heating rates, short reaction times, and high compositional homogeneity. To confirm the combustion synthesis reaction, FT-IR analysis was conducted using glycine with a carboxyl group and an amine as fuel to observe its bonding with metal element in the nitrate. TG-DTA, X-ray diffraction analysis, SEM and EDS were performed to confirm the formed phases and morphology. Powders with an uncontrolled shape were obtained through a general oxide-route process, confirming hollandite powders with micro-sized soft agglomerates consisting of nano-sized primary particles can be prepared using these methods.

Impedance Spectroscopy Analysis of the Screen Printed Thick Films (스크린 프린트된 후막의 Impedance Spectroscopy 특성 분석)

  • Ham, Yong-Su;Moon, Sang-Ho;Nam, Song-Min;Lee, Young-Hie;Koh, Jung-Hyuk;Jyoung, Soon-Jong;Kim, Min-Soo;Cho, Kyung-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.6
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    • pp.477-480
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    • 2010
  • In this study, we fabricate 3 wt% $Li_2CO_3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd bottom electrode printed $Al_2O_3$ substrates for the LTCCs (low temperature co-fired ceramics) applications. From the X-ray diffraction analysis, 3 wt% $Li_2CO_3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at $900^{\circ}C$, showed perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO_3$ doped BST thick films, we employ the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 20 Hz to 1 MHz at the various temperatures.