• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.216-221
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• 2010

Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.440-446
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• 2008

To manufacture the MLCC with X7R for high voltage stability, $BaTiO_3-MgO-MnO_2-Y_2O_3$ with $(Ba_{0.4}Ca_{0.6})SiO_3$ glass frit was formulated. Based on this composition, the addition of $Er_2O_3$ showed that TCC(Temperature Coefficient Capacitance) at $85^{\circ}C$ was improved from 5 % to ${\sim}0\;%$, but the dielectric constant and IR (Insulation Resistance) were decreased. The glass frit improved the dielectric constant and IR, so the appropriate contents of $Er_2O_3$ and glass frit were 0.6 mol% and 1 wt%, respectively. It showed that the dielectric constant and RC constant were 2,550 and 2,000 (${\Omega}F$), respectively in the sintering condition at $1250^{\circ}C$ in PO2 $10^{-7}$ Mpa. The MLCC with $3.2{\times}1.6$ (mm) size and $1\;{\mu}F$ was also suited for X7R with the above composition.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.47.3-47
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• 1998

• 한국세라믹학회지
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• 제53권2호
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• pp.145-149
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• 2016

$(Bi_{1/2}Na_{1/2})_{0.94}Ba_{0.06}(Ti_{1-x}Nb_x)O_3$ (BNBTxNb) ceramics were investigated in terms of the crystal structure as well as the ferroelectric, dielectric, and piezoelectric properties. While little change was observed in the microstructure except for a slight decrease in the average grain size, a significant change was noticed in the temperature dependence of dielectric and piezoelectric properties. It was shown that the property changes are closely related to the downward shift in the position of the ferroelectric-to-relaxor transition temperature with increasing amount of Nb doping. A special emphasis is put on the fact that Nb doping is so effective at decreasing the ferroelectric-to-relaxor transition temperature that even at no more than 2 at.% Nb addition, the transition temperature was already brought down slightly below room temperature, resulting in the birth of a large strain at 0.46 %, equivalent to $S_{max}/E_{max}=767pm/V$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.196-196
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• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.28-28
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• 2007

Ferroelectric $(Ba_{0.5}Sr_{0.5})TiO_3$ (BST) thin films of thickness 500nm were deposited on $LaAlO_3$, (LAO) substrates by at $800^{\circ}C$. BST films were characterized for structure using X-ray diffraction (XRD). The surface morphology and thickness of BST the films were characterized by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM). We measured the dielectric properties at microwave frequencies (1~3 GHz) using a symmetrical stripline resonator with shorted ends and terahertz frequencies (0.2~2.5 THz) using a time-domain terahertz spectroscopy. The real and imaginary parts of the complex dielectric constant of the BST thin films on LAO substrates were in agreement with those previously reported.

• E2M - 전기 전자와 첨단 소재
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• 제6권5호
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• pp.454-460
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• 1993

본 연구에서는 준강유전 특성을 갖는 xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$- (1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$ (x=8.5, 9.0[mol.%], y=65, 70[mol.%]) 세라믹을 2단 소성법으로 제작한 후, 조성 및 인가전계에 따른 전기광학 특성 및 광변조 특성을 측정하였다. 인가전계가 증가함에 따라 8.5/65/35 시편을 제외한 전조성에서 유효복굴절이 2차 함수적으로 변화하는 2차 전기광학 특성을 나타내었으며 2차 전기광학계수, 반파장전압 및 ON-OFF ratio는 9.0/65/35 시편에서 각각 6.17x$10^{-16}$[ $m^{2}$/ $v^{2}$], 136[V], 252의 가장 우수한 값을 나타내었다. 9.0/70/30, 9.0/65/35 및 8.5/70/30 시편에 대해 광변조 특성을 측정한 결과, 입사광의 세기를 인가전압에 의해 변조시킬 수 있음을 관찰하였다.다.

• 한국재료학회지
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• 제22권1호
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• pp.35-41
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• 2012

Presently, the most promising family of lead-free piezoelectric ceramics is based on $K_{0.5}Na_{0.5}NbO_3$(KNN). Lithium, silver and antimony co-doped KNN ceramics show high piezoelectric properties at room temperature, but often suffer from abnormal grain growth. In the present work, the $(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$ component, which has relaxor ferroelectric characteristics, was doped to suppress the abnormal grain growth. To investigate this effect, Lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3-x(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$[KNLN-AS-xBCTZ] piezoelectric ceramics were synthesized by ball mill and nanosized-milling processes in lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3$ in order to suppress the abnormal grain growth. The nanosized milling process of calcined powders enhanced the sintering density. The phase structure, microstructure, and ferroelectric and piezoelectric properties of the KNLN-AS ceramics were systematically investigated. XRD patterns for the doped and undoped samples showed perovskite phase while tetragonality was increased with increasing BCZT content, which increase was closely related to the decrease of TO-T. Dense and uniform microstructures were observed for all of the doped BCZT ceramics. After the addition of BCTZ, the tetragonal-cubic and orthorhombic-tetragonal phase transitions shifted to lower temperatures compared to those for the pure KNNL-AS. A coexistence of the orthorhombic and tetragonal phases was hence formed in the ceramics with x = 0.02 mol at room temperature, leading to a significant enhancement of the piezoelectric properties. For the composition with x = 0.02 mol, the piezoelectric properties showed optimum values of: $d_{33}$ = 185 pC/N, $k_P$ = 41%, $T_C=325^{\circ}C$, $T_{O-T}=-4^{\circ}C$.

• E2M - 전기 전자와 첨단 소재
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• 제3권4호
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• pp.339-346
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• 1990

미소변위소자에 적합한 전왜세라믹스를 제조하기 위하여 0.85Pb(Zn$_{1}$3-x/MgxNb$_{2}$3/) $O_{3}$-0.10BaTi $O_{3}$-0.05PbTi $O_{3}$조성으로 Mg(mol%)를 변화시키면서 시편을 제조하고 구조적, 유전적, 전기적 특성 및 온도 안정성을 관찰하였다. 큐리온도는 Mg(mol%)가 증가함에 따라 감소하였고 Mg(mol%)가 0.15일 때 유전상수가 가장 높았으며 완만도는 -3.9, 산만도.DELTA.Tc는 21로 가장 컸다. 전계에 따른 유전상수는 감소하였고 Mg(mol%)가 증가할수록 압전정수 d$_{31}$은 감소하였으나 0.05, 0.10, 0.15일 때는 거의 일정하였다. Mg(mol%)가 0.15까지 증가함에 따라 전왜정수 Q$_{31}$은 감소하였고 그 이상에서는 Mg(mol%)가 1/3일때 가장 컸으며 ES-1시편에서의 AC 60(Hz), 11(kV/cm) 전계(electric field)에 의한 왜형을 253*$10^{-6}$을 나타냈다.