• Title/Summary/Keyword: $BaTiO_x$

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Ag2Se Modified TiO2 Heterojunction with Enhanced Visible-Light Photocatalytic Performance

  • Zhu, Lei;Tang, Jia-Yao;Fan, Jia-Yi;Sun, Chen;Oh, Won-Chun
    • Korean Journal of Materials Research
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    • v.31 no.12
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    • pp.657-664
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    • 2021
  • To build a highly active photocatalytic system with high efficiency and low cast of TiO2, we report a facile hydrothermal technique to synthesize Ag2Se-nanoparticle-modified TiO2 composites. The physical characteristics of these samples are analyzed by X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis, transmission electron microscopy and BET analysis. The XRD and TEM results show us that TiO2 is coupled with small sized Ag2Se nanoplate, which has an average grain size of about 30 nm in diameter. The agglomeration of Ag2Se nanoparticles is improved by the hydrothermal process, with dispersion improvement of the Ag2Se@TiO2 nanocomposite. Texbrite BA-L is selected as a simulated dye to study the photodegradation behavior of as-prepared samples under visible light radiation. A significant enhancement of about two times the photodegradation rate is observed for the Ag2Se@TiO2 nanocomposite compared with the control sample P25 and as-prepared TiO2. Long-term stability of Ag2Se@TiO2 is observed via ten iterations of recycling experiments under visible light irradiation.

Positive Temperature Coefficient of Resistivity(PTCR) Behavior of Nb2O5 Added Ba0.99(Bi0.5Na0.5)0.01TiO3 Ceramics as a Function of Sintering Time (Nb2O5 첨가와 소결시간에 따른 Ba0.99(Bi0.5Na0.5)0.01TiO3 세라믹스의 PTCR 특성)

  • Oh, Young-Kwang;Choi, Seung-Hun;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.7
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    • pp.559-562
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    • 2011
  • In this study, the effect of $Nb_2O_5$ and sintering time on the positive temperature of coefficient of resistivity (PTCR) behavior of lead free $Ba_{0.99}(Bi_{0.5}Na_{0.5})_{0.01}TiO_3$ (BBNT) ceramics were investigated in order to fabricate a PTC thermistor with high $T_c$ temperature more than $140^{\circ}C$. In particular, BBNT ceramic doped with 0.1mol% $Nb_2O_5$ and sintered at $1350^{\circ}C$ for 4 h has significantly increased Curie temperature ($T_c$) of about $200^{\circ}C$, showed good PTCR behavior of room-temperature resistivity ($\rho_{rt}$) of $40{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $43.78{\times}10^3$ and a large resistivity temperature factor (${\alpha}$) of 16.1%/$^{\circ}C$. With increasing addition of $Nb_2O_5$ content, the $\rho_{rt}$ decreased to a minimum value of $40\;{\Omega}cm$ at 0.1mol% $Nb_2O_5$ and the $\rho_{rt}$ increased for x value over 0.1 mol%.

Development of photocatalytic PVA/$TiO_2$ nanofiber membrane by electrospinning and its application for Air Filtration

  • Linh, Nguyen Thuy Ba;Lee, Byong-Taek
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.38.1-38.1
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    • 2010
  • Nanofibers have a large potential in air filtration applications. In this work, we have developed a photocatalytic polyvinyl alcohol PVA/$TiO_2$ nanofibers membrane for the treatment of air filtration by using electrospinning method. PVA were electrospun into nanofibrous membranes and $TiO_2$ nanoparticles were loaded in PVA nanofibers in various contents from 10% (w/w) to 50% (w/w). The UV-Vis spectra were conducted for testing the existence of $TiO_2$ nanoparticles in PVA fibers. SEM analysis indicated that $TiO_2$ nanoparticles were loaded on the surface of PVA fibers and dispersed linearly along the fiber direction, which originated from the effect of polarization and orientation caused by high electric field. X-ray diffraction (XRD) was used to determine the crystalline of the membrane. Tensile strength was measured to evaluate the physical properties of the membrane. Therefore, our work suggested that PVA/$TiO_2$ nanofiber membrane has a potential application in air filtration area.

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Study on the Fabrication of Embedded Capacitor Films for PWB substrate (PWB 기판용 Embedded Capacitor필름 제작에 관한 연구)

  • 이주연;조성동;백경욱
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.11a
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    • pp.21-27
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    • 2001
  • Epoxy/BaTiO$_3$composite film type capacitors with excellent stability at room temperature, uniform thickness, and electrical properties over a large area were successfully fabricated. We fabricated composite capacitor films with good film formation capability and easy process ability, from ACF-resin as a matrix and two kinds of BaTiO$_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction. DSC and dielectric properties tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of $7{\mu}{\textrm}{m}$ thick film with 10nF/cm2 and low leakage current were successfully demonstrated.

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Crystal Structure and Dielectric Responses of Pulsed Laser Deposited (Ba, Sr)$TiO_3$ Thin Films with Perovskite $LaNiO_3$ Metallic Oxide Electrode

  • Lee, Su-Jae;Kang, Kwang-Yong;Jung, Sang-Don;Kim, Jin-Woo;Han, Seok-Kil
    • The Korean Journal of Ceramics
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    • v.6 no.3
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    • pp.258-261
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    • 2000
  • Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

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Microwave Dielectric Properties of the BSST Ceramics doped with Nd. (Nd가 첨가된 BSST 세라믹스의 마이크로파 유전 특성)

  • Park, In-Gil;Lee, Young-Hie;Ryu, Ki-Won;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1254-1256
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    • 1994
  • 0.15$(Ba_{0.95}Sr_{0.05})$O-0.15$(Sm_{2(1-x)}Nd-{2x})O_3-0.7TiO_2 (x=0{\sim}10[m/o])$ ceramics were fabricated by mixed-oxide method. Microwave dielectric properties was investigated with the contents of $Nd_2O_3$. Increasing the contents of $Nd_2O_3$ from 0 to 6[m/o], sintered density was increased 5.53 to $5.68[g/ cm^3]$. In the specimen with contents of $Nd_2O_3$(6[m/o]), dielectric content was maximum value of 78.14 and decreased with increasing the contents of $Nd_2O_3$. Quality factor was increased with the contents of $Nd_2O_3$.

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Fabrication and Properties of Thin Microwave Absorbers of Ferroelectric Materials Used in Mobile Telecommunication Frequency Bands (강유전체를 이용한 이동통신주파수 대역용 박형 전파흡수체의 제조 및 특성)

  • Lee, Yeong-Jong;Yun, Yeo-Chun;Kim, Seong-Su
    • Korean Journal of Materials Research
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    • v.12 no.2
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    • pp.160-165
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    • 2002
  • High-frequency dielectric and microwave absorbing properties have been investigated in ferroelectric materials (BaTiO$_3$(BT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$-xPbTiO$_3$(PMN-PT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$O$_3$-xPb(Zn_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$(PMN-PZN) for the aim of thin microwave absorbers in the frequency range of mobile telecommunication. The specimenns are prepared by conventional ceramic processing and complex permittivity has been measured by transmission/reflection method. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave range and their domiant loss mechanism is considered to be domain wall relaxation. The microwave absorbance of BT 0.9PMN-0.1PT, and 0.8PMN-0.2PZN specimen (determined at 2) are found to be 99.5% (at a thickness of 4.5 mm), 50% (2.5 mm), and 30% (2.5 mm), respectively. It is suggested that PMN-PT or PMN-PZN ferroelectrics are good candidate materials for the spacer of λ/4 absorber. The use of ferroelectric materials is effective in reducing the thickness of absorber with their advantage of high dielectric constant.

Influence of Yb2O3 Doping Amount on Screen-printed Barium Strontium Calcium Titanate Thick Films

  • Noh, Hyun-Ji;Lee, Sung-Gap;Ahn, Byeong-Lib;Lee, Ju
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.6
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    • pp.241-245
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    • 2007
  • [ $(Ba_{0.9-x}Sr_xCa_{0.10})TiO_3$ ] (x=0.33, 0.36) powders were prepared by sol-gel method. $(Ba,Sr,Ca)TiO_3$(BSCT) thick films, undoped and doped with $MnCO_3$ and $Yb_2O_3(0.1{\sim}0.7mol%)$, were fabricated by the screen printing method on the alumina substrate. The coating and drying procedure was repeated 6-times. The Pt bottom electrode was screen printing method on the alumina substrate. These BSCT thick films were annealed at $1420^{\circ}C$ for 2 hr in atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at $590^{\circ}C$ for 10 min. And then the structured and dielectric properties as a function of the doping amount of $Yb_2O_3$ were studied. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed XRD patterns of typical cubic peroveskite structure. The average thickness of BSCT thick films was about $70^{\mu}m$. The curie temperature and the dielectric constant decreased with increasing $Yb_2O_3$ doped content and the relative dielectric constant of the specimen, doped with 0.5 mol% $Yb_2O_3$ at BSCT(54/36/10), showed a best value of 5018 at curie temperature.

A Study on Surface of BST Thin Films by Sol-Gel Methods (졸겔법으로 제작된 BST 박막의 구조적 특성)

  • 홍경진;민용기;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.377-380
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    • 2001
  • The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

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