• Title/Summary/Keyword: $BaTiO_x$

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Application of Response Surface Method for Modeling of Room Temperature Resistivity of $(Ba_{0.8-x}Sr_{0.2})Y_xTiO_3$ ($(Ba_{0.8-x}Sr_{0.2})Y_xTiO_3$의 상온비저항을 모델링하기 위한 반응표면분석법의 적용)

  • Moon, Hyung Chul;Noh, Tae Yong;Kim, Seung Won;Lee, Chul
    • Journal of the Korean Chemical Society
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    • v.42 no.6
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    • pp.652-656
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    • 1998
  • $(Ba_{0.8-x}Sr_{0.2})Y_xTiO_3\;(BSYT)$ powders were prepared by the calcination of metal-oxalate precipitates, which were obtained by wet chemical method using Ba, Sr, Y and Ti-nitrates and oxalic acid. Yttrium content, sintering temperature and cooling rate were taken as experimental factors. Response surface method was applied to modelling of the room temperature resistivity of BSYT. The results indicated that the Yttrium content had larger effect on the room temperature resistivity and minimum room temperature resistivity was at Yttrium content of 0.24 mol%. The validity of a modelling equation was confirmed by comparing the measured room temperature resistivity with the calculated one.

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Dependence of RF power of ($Ba_{0.5}Sr_{0.5})TiO_3$ thin film using RF magnetron sputtering (RF magnetron sputtering을 이용한 ($Ba_{0.5}Sr_{0.5})TiO_3$ 박막의 RF power 의 존성)

  • 최형윤;이태일;정순원;박인철;최동한;김흥배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.51-54
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    • 2000
  • In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

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Rietveld Refinement and Crystal Structure of K-Ba Substituted Synthetic Hollandite, ($K_{2x}Ba_{1-x}Cr_2Ti_6O_{16}$) (리트벨트법을 이용한 K-Ba 치환 합성 홀란다이트($K_{2x}Ba_{1-x}Cr_2Ti_6O_{16}$)의 결정구조 연구)

  • 최진범;김태현
    • Journal of the Mineralogical Society of Korea
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    • v.14 no.2
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    • pp.128-136
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    • 2001
  • The K-Ba complete solid solution of 7 synthetic hollandite-type minerals ($K_{2x}$ $Ba_{1-x}$ $Cr_2$/$Ti_{6}$ $O_{16}$ , x=0, 0.1, 0.3, 0.5, 0.7, 0.9, 1.0, respectively) are studied by the X-ray powder diffraction and Rietveld refinement to find structural transformation during substitution of $Ba^{2+}$ by $K^{+}$ in A site of the tunnel structure of hollandite. Rietveld indices indicate that $R_{wp}$ with respect to $R^{exp}$ ($R_{wp}$ $R_{exp}$ ) are in the range of 15.66%/20.90% and 14.74%/l9.37%, $R_{B}$ and S(Goodness of Fitness) are 6.45~8.97%, 1.45~1.63, respectively. Unit cell parameters of synthetic hollandites, space group 14/m, are a=10.1194(2)~10.0599(2)$\AA$, c=2.9572(6)~2.9512(7)$\AA$, and V=302.75~298.66$\AA^{3}$. Rutile formed as an impurity in those with more than 50% K contents in hollandite series. Substitution of Ba by K ion in a tunnel structure results in constant decrease of cell parameters, but is not sufficient enough to change the hollandite structure. Our data indicate that transformation of tetragonal 14/m to lower symmetry of monoclinic 12/m in hollandite structure may at least be affected by other cation substitution in same A site and/or by cation substitution in B site.

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Fabrication of YBCO Superconducting Film with $CeO_2$/$BaTiO_3$Double Buffer Layer ($CeO_2$/$BaTiO_3$이중완충막을 이용한 YBCO 박막 제작)

  • 김성민;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.11
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    • pp.959-962
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    • 2000
  • We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1${\mu}{\textrm}{m}$. When BaTiO$_3$ is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4$\times$10$^4$ A/$\textrm{cm}^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

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The Dielectric Characteristics of ($Ba_x Sr_{l-x})TiO_3$ Thin Films by the Spin-Coating method (스핀코팅법에 의한 ($Ba_x Sr_{l-x})TiO_3$ 박막의 유전 특성에 관한 연구)

  • 기현철;장동환;홍경진;오수홍;김태성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.132-135
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    • 1999
  • Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (B $a_{x}$ S $r_{l-x}$)Ti $O_3$(BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/ $SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2000($\AA$). Dielectric constant and loss of thin films was little decreased at 1[KHz] ~1[KHz]. Dielectric constant and loss to frequency were 250 and 0.02 in $Ba_{0.7}$S $r_{0.3}$Ti $O_3$. The properly of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

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Effect of Sludge Pellets on $NO_x$ REmoval in $BaTiO_3$-sludge Packed-bed Reactor ($BaTiO_3$-슬러지 Packed-bed형 반응기에서 $NO_x$제거에 미치는 슬러지의 영향)

  • 박재윤;송원섭;고희석;박상현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.10
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    • pp.861-867
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    • 2001
  • In this paper, in order to investigate the catalytic effect of the sludge exhausted from waterworks on NO$_{x}$ removal, we measure NO removal characteristics with and without sludge pellets in BaTiO$_3$-sludge packed-bed reactor of plate-plate geometry. NO initial concentration is 50 ppm balanced with air and a gas flow rate is 5ι/min. Gas temperature is changed from 25 to 10$0^{\circ}C$ to investigate the role of sludge pellet on removing active oxygen species and NO$_2$. BaTiO$_3$pellets is filled for coronal discharge at upstream of reactor and sludge pellets is filled for catalytic effect at downstream of reactor. The volume percent of sludge pellets to BaTiO$_3$pellets is changed from 0% to 100% and AC voltage is supplied to the reactor for discharging simulated gases. In the results, when sludge pellets is put at the downstream of plasma reactor, NO removal rate is slightly increased. However, NO$_2$and $O_3$ as by-products during NO removal is significantly decreased from 51ppm without sludge pellets to 5 ppm with sludge pellets and from 50 ppm without sludge pellets to 0.004ppm with sludge pellets, respectively. Therefore, NO$_{x}$(NO+NO$_2$) removal rate is increased up to 93%. It is thought that sludge pellet maybe react with active oxygen species and NO$_2$ generated by corona discharge in surface of BaTiO$_3$pellets, the then NO$_2$O$_3$as by-products are considerably decreased. When we increase gas temperature from room temperature to 10$0^{\circ}C$, NO removal rate is decreased, while NO$_2$ concentration is independent on gas temperature. These result suggest that the removal mechanism of active oxygen species and NO$_2$in sludge pellet is not absorption, but chemical reaction. Therefore we expect that sludge pellets exhausted for waterworks could be used as catalyst for NO$_{x}$ removal with high removal rate and low by-product.oduct.

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Analysis of Grain Boundary Oxidation in $(Ba, Sr)TiO_3$-based PTCR Ceramics by $\mu-AES$ and $DV-X\alpha$ Energy Simulation ($(Ba, Sr)TiO_3$계 PTCR 세라믹스의 입계산화에 대한 $\mu-AES$ 분석 및 $DV-X\alpha$ 궤도에너지 계산모사)

  • 김명철;강영석;허수형;박순자
    • Journal of the Korean Ceramic Society
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    • v.31 no.6
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    • pp.587-594
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    • 1994
  • (Ba, Sr)TiO3-based PTCR ceramics were sintered and cooled down with various cooling conditions in the air. AES was applied to investigate the composition change in the grain boundary and bulk area of oxidatively cooled samples. Ba component was deficit in grain boundary region, while oxygen was abundant than bulk region. The discrete changes of oxygen binding energies were confirmed in the grain boundary region of the heavily oxidized samples. It was supposed that the large binding energy shift resulted from the oxidation of the segregated Mn in grain boundary region and this idea was supported by the DV-X$\alpha$ molecular energy simulation.

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Dielectric Properties of LCP and $BaTiO_3-SrTiO_3$ Composites for Embedded Matching Capacitors (내장형 capacitor를 위한 LCP와 $BaTiO_3-SrTiO_3$ 복합재의 유전특성)

  • Kim, Jin-Cheol;Yoon, Sang-Jun;Yoon, Keum-Hee;Oh, Jun-Rok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.60-60
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    • 2008
  • We manufactured Liquid Crystal Polymer (LCP) and (1-x)$BaTiO_3-xSrTiO_3$(BST) ceramic composites and investigated dielectric properties to use as embedded capacitor in printed circuit boards and replace LTCC substrates. The dielectric properties of these composites are varied with volume fraction of BST and ratios of BT/ST. Dielectric constants are in the range of 3~28. In addition, we could get low TCC and High Q value that could not achieve in other ceramic-polymer composites. Especially, in composite with x=0.4 and 50vol% BST, the dieletric constant and Q-value are 27 and 300, respectively. And more TCC is -116~145ppm/$^{\circ}C$ in the temperature range of -55~$125^{\circ}C$. We think that this composites can be used high-Q substrate material like LTCC and embedded temperature compensation capacitor in printed circuit boards.

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