• 대한화학회지
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• 제38권4호
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• pp.309-318
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• 1994

La$_2O_3$-변형 BaTi$O_3$의 안정한 결함구조와 단일상 영역을 X-선 회절분석기와 주사전자현미경을 사용하여 연구하였다. La$_2O_3$-변형 BaTi$O_3$의 안정한 결함구조는 La$^{3+}$ 이온이 격자구조내의 Ba$^{3+}$ 이온을 치환하고 Ti빈자리가 전하 불균형을 보상하기 위한 결함으로 생성된 [($Ba^x_{Ba})_{1-2x}(La{\cdot}_{Ba})_{2x}][Ti^x_{Ti})_{1-x/2}(V""_{Ti})_{x/2}]O_3$이다. 안정한 결함구조가 형성되도록 BaTi$O_3$에 La$_2O_3{\cdot}3/2TiO_3$를 혼입할 때 단위격자는 약 3 mol%가 혼입될 때부터 정방정에서 입방정으로 변하였고, 고용한계는 약 14 mol%이었다. La2$O_3{\cdot}3/2TiO_2$를 고용한계 이상으로 혼입할 때는 이차상으로 La_4Ba_2Ti_5O){18}$가 생성되었다. La$_2O_3$-변형 BaTi$O_3$ 조성에서 BaO가 과량 존재하면 소결성이 나쁘지만, Ti$O_2$가 과량으로 존재하면 액상소결에 의하여 소결성이 좋아짐을 확인할 수 있다.

• 한국세라믹학회지
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• 제31권9호
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• pp.995-1004
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• 1994

Phase relation and microwave dielectric properties of the system BaO.(Nd1-xSmx)2O3.TiO2 (n=4, 5) were studied. With n=5 (1 : 1 : 5), Ba2Ti9O20 and TiO2 formed in case of X$\leq$0.7, and Ba2Ti9O20 and Sm2Ti2O7 formed at X=1.0 as the second phases dispersed in fine-grained orthorhombic matrix phase. With n=4 (1 : 1 : 4). on the contrary, only fine grains of an ortho-rhombic phase were observed irrespective of Nd/Sm ratio. The compositions of these two stable orthorombic phases having distinct lattic constants even with the same Nd/Sm ratio were estimated as 4BaO.5(Nd1-xSmx)2O3.18TiO2 and BaO.(Nd1-xSmx)2O3.4TiO2 with n=5 and n=4 in the system BaO.(Nd1-xSmx)2O3.TiO2, respectively. Consequently the composition BaO.(Nd1-xSmx)2O3.5TiO2 lies in the compatible triangle of 4BaO.5(Nd1-xSmx)2O3.18TiO2 and the second phases mentioned above. The microwave dielectric properties (~4 GHz) of BaO.(Nd1-xSmx)2O3.5TiO2 can be controlled effectively by adjusting Sm content : with increasing X from 0 to 0.7, both dielectric constant and the temperature coefficient of resonant frequency decreased monotonically from 82 to 65 and from 91 (ppm/$^{\circ}C$) to -19(ppm/$^{\circ}C$), respectively, while unloaded Q(Qo) remained constant at about 2,600.

• 한국세라믹학회지
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• 제33권8호
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• pp.895-900
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• 1996

수산염볍으로 Ba(Ti1-xSnx)4O9 분말을 합성하였다. Ti자리에 Sn이 치환되면 생성된 BaTi4O9은 고용체를 형성하기 때문에 안정화되었다. BaTi4O9 결정상의 생성을 위한 최적 고용량은 0.16mole이었으며, 그 이상 첨가시는 BaTi4O9 결정 성장을 억제하였다. 0.16mole Sn을 첨가하여 135$0^{\circ}C$에서 30분 소결하였을 때 긴 막대형의 결정이 가장 잘 발달하였고, 이때 Q값이 가장 높았다. 그러나 Sn 첨가량이나 소결 유지시간을 변화시켜도 유전율은 거의 일정하였다.

• Journal of Magnetics
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• 제14권3호
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• pp.120-123
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• 2009

In this study, BiFe$O_3$-BaTi$O_3$ ceramics have been fabricated by a solid-state reaction method. The effects of BaTi$O_3$ content in the (1-x)BiFe$O_3$-xBaTi$O_3$ (x = 0.1, 0.2, 0.25, 0.3, 0.4, 0.5) system on crystal structure and magnetic, dielectric, and ferroelectric properties were investigated. Perovskite BiFe$O_3$ was stabilized through the formation of a solid solution with BaTi$O_3$. Rhombohedrally distorted structure (1-x)BiFe$O_3$-xBaTi$O_3$ ceramics showed strong ferromagnetism at x = 0.5. Dielectric and ferroelectric properties of the BiFe$O_3$-BaTi$O_3$ system also changed significantly upon addition of BaTi$O_3$. It was found that the maximum dielectric and ferroelectric properties were exhibited in the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25. This suggested the morphotropic phase boundary (MPB) with the coexistence of both rhombohedral and cubic phases of the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25.

• 한국세라믹학회지
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• 제32권4호
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• pp.448-454
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• 1995

The effect of WO3 addition on microwave dielectric properties of BaTiO3-3{(1-x)TiO2-xWO3} system was studied. Addition of WO3 to this system resulted in the formation of BaWO4 and Ba2Ti9O20 phases. Both the dielectric constant (K) and the temperature coefficientof resonant frequency (Tf) were decreased with the amount of WO3 addition. The value of Q$\times$f0 was increased as the amount of WO3 was increased up to x=0.0275, and then decreased when x exceeded 0.03. At x=0.0275, this ceramic showed excellent microwave proprties of K=34-35, Q$\times$f0=50,000-53,000, and near zero ppm/$^{\circ}C$ of Tf.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.45-48
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• 1998

A BaTiO$_3$ was annexed to SrTiO$_3$, (x)BaTiO$_3$-(1-x)SrTiO$_3$ (0.7$\leq$X$\leq$1) ceramics with stable dielectric and electrical properties in high voltage were manufactured. Structural, dielectric and electrical properties were surveyed with the contents of SrTiO$_3$. The open porosity and sintering density were excellent in 0.9BaTiO$_3$-0.1SrTiO$_3$, the grain size of 0.9BaTiO$_3$-0.1SrTiO$_3$ was maximum at 12.40[${\mu}{\textrm}{m}$]. Increasing SrTiO$_3$ mol ratio, the curie temperature was shifted low temperature and the supreme permittivity was increased. In line with increasing of supplied voltage, permitivity was decreased slightly.

• 한국재료학회지
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• 제8권7호
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• pp.659-663
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• 1998

BaO.$Nd_{2}O_{3}$.$4TiO_{2}$세라믹스에서 Bi 치환위치 및 Bi 치환 량에 따른 상, 미세구조, 마이크로파 유전특성 등을 조사하였다. BaO.$Nd_{2}O_{3}$.$4TiO_{2}$ 세라믹스의 Nd 치환되어 $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$고용체 (0$\leq$x$\leq$0.2)를 형성하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$에서 Bi 치환 량이 x=0에서 x=0.2까지 증가됨에 따라 입자크기가 계속 증가하였으며, 유전상수는 84에서 108까지 계속 증가하였고, 공진 주파수의 온도계수는 $44 ppm^{\circ}C$에서 $-30ppm^{\circ}C$로 계속 감소하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$조성에서 Bi 치환 량이 x=0.04에서 0.08사이일 때 가장 양호한 마이크로파 유전특성이 얻어졌으며 이 때의 유전상수 (${\varepsilon}_r$)는 89~92, Q, f는 5855-6091 GHz, 그리고 공진 주파수의 온도계수 (${\tau}_f$)는 -7.7-7.5 ppm/$^{\circ}C$이었다.

• 한국세라믹학회지
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• 제30권6호
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• pp.441-448
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• 1993

The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.825-828
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• 2008

$Sr_xBa_{(1-x)}TiO_3$ red phosphors doped with Pr(0.13 mol%) and Al(O.23 mol%) were synthesized by solid state reaction method. Orthorhombic perovskite structure with increasing value of x in $Sr_xBa_{(1-x)}TiO_3$:Pr,Al phosphors changed to cubic perovskite structure. Emission bands at 615 nm and 492 nm in $Sr_{0.25}Ba_{0.75}TiO_3$:Pr,Al and $BaTiO_3$:Pr,Al phosphors were observed at room temperature. The main cause of green luminescence at 492 nm was explained by the change of the 4f5d band.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.365-366
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• 2005

PZT films are the most intensively investigated because PZT has advantages such as low processing temperature and large remnant values. In this paper, the microstructure and electric properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ heterolayered thick films with Zr mole ranging from 30 to 70 % screen printed onto a alumina substrate were studied. $Pb(Zr_x,Ti_{(1-x)})O_3$ and $BaTiO_3$ powders were prepared by the sol-gel method. The $BaTiO_3$ powders were calcined at $700^{\circ}C$ for 2 hours. Structural properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ multilayered thick films were investigated. As a result of the X-ray diffraction (XRD) analysis, $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ exhibited a perovskite polycrystalline phase without pyrochlore phase or any preferred orientation.