• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.289-292
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• 1997

BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.580-586
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• 1995

최근 커패시터의 전극은 Pt, Au등으로 이용되고 있다. 이러한 전극의 전기적 특성은 우수하나 고가이다. 본 연구에서는 전극의 저가격화 측면에서 알루미늄 전극 위에 BaTiO$_{3}$를 증착하고 기관의 온도를 실온에서 600[.deg. C]까지 변화시켜 RF스퍼터링법으로 제작하였다. BaTiO$_{3}$세라믹의 유전특성은 구성하고 있는 입자의 강유전 분역 밀도와 입자의 크기에 의존하므로 입자가 성장되는 온도영역에서 입자의 크기와 유전율간의 관계를 연구하였다. 또한 BaTiO$_{3}$박막 커패시터의 유전상수는 BaTiO$_{3}$세라믹과 알루미늄기관의 계면에서 산화특성이 일어나기 때문에 기관온도의 변화에 의해 조사되었다. 기관의 온도를 증가시킴에 따라 결정면의 피크와 강도는 증가하였으며, 유전특성은 결정입자의 크기가 0.8[.mu.m]일때 가장 양호하였다. 유전율값은 기판 온도가 400[.deg. C]일 때 가장 크게 나타났다. 결과적으로, 알루미늄 전극에 BaTiO$_{3}$세라믹을 증착하여 저가의 적층용 세라믹 콘덴서를 제조할 수 있음을 알았다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.610-615
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• 2022

BaTiO₃ is one of the ferroelectric materials with excellent dielectric properties such as high dielectric constant, low dielectric loss, and is widely used for the manufacturing of capacitors, piezoelectric converters, microsensors, and ferroelectric memories. Inkjet printing is a technology which uses digital and contactless methods which significantly improves flexibility associated with material and structural design, reducing manufacturing costs. Therefore, the top and bottom electrodes, BaTiO₃ ink, and photocurable resin were all printed by an inkjet to produce a BaTiO₃ capacitor. The properties of the printed thin film were analyzed. It was confirmed that the photocurable resin ink was well-infiltrated between the BaTiO₃ powder particles printed by inkjet. The dielectric properties of the capacitor such as dielectric constant which varies in accordance with frequency, polarization and tunability that changes with voltage, were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.33-34
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• 2008

Barium titanate (BaTiO3) is one of the most important dielectric materials for the electronic devices, such as MLCC (Multilayer Ceramic Capacitor). The thickness of the dielectric thin film in MLCC has become thinner and reached about 0.8 ${\mu}m$. Further down sizing is required for the higher performance. For this reason, we should take into account for the size effect of Barium titanate powders. In this study, we demonstrated that size effect for BaTiO3 (0.2 ~ 0.5 ${\mu}m$, hydrothermal BT) could be estimates by using dielectric properties analysis together with the powder properties.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.30-39
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• 2000

The variation of electrical properties of (Ba, Sr)TiO$_3$[BST] thin films deposited of RuO$_2$electrode with (Ba+Sr)/Tr ration was investigated. BST thin films with various (Ba+Sr)/Tr ration were deposited on RuO$_2$/Si substrates using in-situ RF magnetron sputtering. It was found that the electrical properties of BST films depends on the composition in the film. The dielectric constant of the BST films is about 190 at the (Ba+Sr)/Tr ration of 1.0, 1,025 and does not change markedly. But , the dielectric constant degraded to 145 as the (Ba+Sr)/Tr ratio increase to 1.0. In particular, the leakage current mechanism of the films shows the strong dependence on the (Ba+Sr)/Tr ration in the films. At the ration (Ba+Sr)/Tr=1,025, the Al/BST/RuO$_2$ capacitor show the most asymmetric behavior in the leakage current density, vs, electric field plot. It is considered that the leakage current of the (Ba+Sr)/Tr=1,025 thin films is controlled by the battier-Iimited process, i,e, Schottky emission.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1274-1276
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• 1994

A study on $BaTiO_3$ ceramics have been shown that dielectric properties of $BaTiO_3$ ceramics strongly depend on the size and ferroelectric domain density of the constituting grain. According to rising substrate temperature from $25[^{\circ}C]$ to $600[^{\circ}C]$, the peak intensity and crystal plane in XRD are increased. In this study, $BaTiO_3$ thin film prepared by RF sputtering from room temperature to $600[^{\circ}C]$ of substrate temperature. Therefore, we tried to investigate the relation between the characteristics of ceramics structure and dielectric factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.455-458
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• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.