• Korean Journal of Materials Research
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• v.32 no.11
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• pp.508-514
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• 2022

Piezoelectric composite films which are enabled by inorganic piezoelectric nanomaterials-embedded polymer, have attracted enormous attention as a sustainable power source for low powered electronics, because of their ease of fabrication and flexible nature. However, the absorption of applied stress by the soft polymeric matrices is a major issue that must be solved to expand the fields of piezoelectric composite applications. Herein, a flexible and porous piezoelectric composite (piezoelectric sponge) comprised of BaTiO₃ nanoparticles and polydimethylsiloxane was developed using template method to enhance the energy conversion efficiency by minimizing the stress that vanishes into the polymer matrix. In the porous structure, effective stress transfer can occur between the piezoelectric active materials in compression mode due to direct contact between the ceramic particles embedded in the pore-polymer interface. The piezoelectric sponge with 30 wt% of BaTiO₃ particles generated an open-circuit voltage of ~12 V and a short-circuit current of ~150 nA. A finite element method-based simulation was conducted to theoretically back up that the piezoelectric output performance was effectively improved by introducing the sponge structure. Furthermore, to demonstrate the feasibility of pressure detecting applications using the BaTiO₃ particles-embedded piezoelectric sponge, the composite was arranged in a 3 × 3 array and integrated into a single pressure sensor. The fabricated sensor array successfully detected the shape of the applied pressure. This work can provide a cost-effective, biocompatible, and structural strategy for realizing piezoelectric composite-based energy harvesters and self-powered sensors with improved energy conversion efficiency.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.725-731
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• 2003

The effect of organic processing parameters on the dispersion stability of the BaTiO$_3$-based dielectric particles and borosilicate glass particulate suspensions was investigated in a system where organic solvents, dispersant, binder and modifier were used as processing additives in a low temperature cofired ceramic fabrication processes. Two- and three-component organic solvents were used to disperse ceramic particles and it was found the better stability in the particulate suspension prepared in a bi-solvent, which was consists of toluene and ethanol in a non-azeotropic composition. The addition amount of organic additives had a great impact on dispersion in the present investigation. The flow curves of the suspensions prepared with binder and modifier were fitted according to the power-law equation, which indicates that the internal structure of the suspension could be disturbed under the applied shear stress. Finally, the LTCC green tapes were successfully tape-cast based upon the optimum formulation of LTCC suspension and its microstructure was compared with that of the hard-agglomerates.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.410-411
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• 2009

The multi-component ceramic proton conductor, $BaZr(Y)O_3-SiO_2-TiO_2-ZrO_2$ (BZY-STZ) and $LaPO_4-SiO_2-TiO_2-ZrO_2$ (LP-STZ), were synthesized by micro-emersion and sol-gel technique. The characterization of proton conductors were carried out using X-ray diffraction(XRD), thermogravimetric analysis(TGA), differential thermal analysis(DTA), impedance analysis. The proton conductors indicate the possibility of application for the intermediate temperature up to $700^{\circ}C$.

• Journal of Powder Materials
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• v.13 no.2 s.55
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• pp.129-137
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• 2006

In this study, high purity fine $BaTiO_3$ powders were prepared by SHS (Self-propagating High-temperature Synthesis). We would examinate the study of sintering properties and characteristics as a function of temperature with various additives (binder, sintering agent). In separately binder addition, the green and sintered density of specimen were increased as binder content increases. The increased porosity resulted in fine grain size due to the inhibition of grain boundary moving. The $Al_{2}O_{3},\;TiO_{2}$ and MgO playa role of increasing dielectric constants at room temperature. These values were decreased at curie temperature. In case of $SiO_2$, the Curie temperature was decreased. In this study, a high dielectric ceramic capacitor material with temperature stability was synthesized by using various additives.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.132-139
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• 2005

Sintering behavior of $BaO-Nd_{2}O_3-TiO_2$ with a Pb-based glassceramics frit were investigated in order to understand an effect of glassceramics as a low temperature sintering agent on dielectric ceramics. A green sheet form was fabricated through tape casting method with the glassceramic fut added $BaO-Nd_{2}O_3-TiO_2$. The dispersion properties, rheological properties and final density of dielectric composit slurry as a function of amount and composition of organic additives was examined. The dispersants' addition was effective in controlling dispersion of the ceramics in solution. The addition of excessive dispersant showed adverse effect on dispersion. The prepared slurries, containing ceramic : powders, glass-ceramics and various kinds of organic viechles, exhibited typical shear thinning behavior. The best properties of tape casting appeared powder to solvent ratio 65 : 35 and amount of the binder 6 wt$\%$ and plasticizer 3 wt$\%$. The viscosity of the slurry was 677 cps and green/sintered density in the tape was $3.3 g/cm^3,\;5.56 g/cm^3$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.636-640
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• 2011

The lead-free $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Ba(Zr_{0.52},Ti_{0.48})O_3$-(hereafter NKN-BZT) CuO, ZnO-doped ceramics were prepared using a conventional mixed oxide method. NKN-BZT ceramics doped CuO, ZnO have superior structural and electrical properties than pure NKN-BZT ceramics. For the NKN-BZT-ZnO ceramics sintered at $1,120^{\circ}C$, piezoelectric constant ($d_{33}$) of sample showed the optimum values of 172 pC/N. The $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Ba(Zr_{0.52},Ti_{0.48})O_3$-ZnO ceramics are a promising candidate for lead-free piezoelectric materials.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.771-776
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• 2004

[ $Ba(Zr_{0.08}Ti_{0.92})O_3$ ] polycrystal was grown by floating zone technique with two ellipsoidal mirrors using the $8\%$of Zr-modified BZT ceramics as both a feed rod and a seed crystal. In order to study the annealing effect, a part of the grown crystal was sliced and annealed in the oxygen atmosphere at $1,200^{\circ}C$ for 10 h. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz were measured in the temperature range between $-100^{\circ}C$ and $150^{\circ}C$ to investigate the dielectric properties of the grown polycrystal. The electric-field dependence of the dielectric constant at 10 kHz and 100 kHz was studied by measuring the dielectric constants as a function of the biased-electric fields which ran from -15 kV/cm to 15 kV/cm. Due to the effect of annealing in the oxygen atmosphere, the electric-field tunability of dielectric constants increased from $47.5\%$ to 5 to and the figure of merit for this material from 39.6 to 46.4. Since the figure of merit can be increased to more than 46.4 by increasing the maximum value of the biased-electric fields to more than 15 V/cm, this material nay have a possibility for applications in microwave tuning devices at room temperature.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.238-241
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• 1996

New porous BaTiO$_3$ thermistors were fabricated using graphite powders (0 to 10 wt. %) and their porosities were in the range of 9.1% to 16.2%. As results of impedance analysis, it was confirmed that the pores affected the grain-boundary resistance and the bulk (grain interior) resistance was constant as about 25 $\Omega$ at room temperature. The magnitude of PTCR effect $(p_{max}/p)$ markedly increased from 3 orders to 7 orders without addition of any acceptor dopant such as Mn or Cr.