• Title/Summary/Keyword: $BaTiO_3$ ceramic

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Effects of $Nd_2O_3$ and $TiO_2$ Addition on the Microstructures and Microwave Dielectric Properties of $BaO-Nd_2O_3-TiO_2$ System

  • Kim, Tea-Hong;Park, Jung-Rae;Lee, Suk-Jin;Sung, Hee-Kyung;Lee, Sang-Seok;Choy, Tae-Goo
    • ETRI Journal
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    • v.18 no.1
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    • pp.15-27
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    • 1996
  • The effects of $Nd_2O_3$ and $TiO_2$ addition on the microstructures and microwave dielectic properties of $BaO-Nd_2O_3-TiO_2$ system were investigated. $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_{5}O_{14}$ phases were observed for compositions based on BaO/$Nd_2O_3$ = 1 ratio. The compositions deviated from $BaO/Nd_2O_3=1$ ratio were composed of major phases of $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_5O_{14}$, and the compound of $Nd_2O_3$ and $TiO_2(Nd_2Ti_2O_7)$ or that of BaO and $TiO_2(BaTi_4O_9)$. The microstructure of ceramic with $BaO{\cdot}Nd_2O_3{\cdot}4TiO_2$ composition varied from spherical grains to needlelike grains with increasing sintering temperature. With increasing $Nd_2O_3$, the optimum sintering temperature with maximum density increased, and the dielectric constant(${\varepsilon}_r$) and quality factor(Q) decreased due to the formation of secondary phases. With increasing $TiO_2$, the optimum sintering temperature and the dielectric constant decreased with increased Q value. And the temperature coefficient of resonant frequency, ${\tau}_f$ shifted toward positive direction. The dielectric ceramics with $BaO/Nd_2O_3=1$ showed Q values of above 2000 and dielectric constants of above 80 at 3GHz.

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PTCR Effects in Molten Salt System Synthesized Semiconductive $BaTiO_3$ (용융염 합성법에 의한 반도성 $BaTiO_3$의 PTCR 효과)

  • 윤기현;오기영
    • Journal of the Korean Ceramic Society
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    • v.22 no.3
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    • pp.13-18
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    • 1985
  • Semiconductive $Ba_{0.9}Sr_{0.1}TiO_3$ was prepared by both the Calcining of mixed Oxides (C. M. O) and the Molten Salt Synthesis(M.S.S) methods to investigate the PTCR effects. In the Molten Salt Synthesis method the temperature of calcination for Synthesis of $BaTiO_3$ could be lowered from 110$0^{\circ}C$ to 80$0^{\circ}C$. The M.S.S Specimens had smaller grain size and more homogeneous size distribution at the same sintering temperature as compared with the C. M. O specimens. The M. S. S. specimens showed greater PTCR effects and current variations in the time vs. current charac-teristics than those of C. M. O Specimens.

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Microstructure and PTCR Behavior of Semiconducting (1-x)$BaTiO_3$ - x$(Bi_{1/2}K_{1/2})TiO_3$ Ceramics ($BaTiO_3$ - $(Bi_{0.5}Ko_{0.5})TiO_3$계 세라믹의 PTC효과와 미세구조)

  • Park, Yong-Jun;Jeong, Young-Hun;Lee, Young-Jin;Paik, Jong-Hoo;Kim, Dae-Joon;Lee, Woo-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.336-336
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    • 2008
  • A positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}K_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The electrical properties and the microstructure of (1-x) $BaTiO_3$ - x $(Bi_{0.5}K_{0.5})TiO_3$ (BBKT) ceramics made using a conventional mixed and have been synthesized by an ordinary sintering technique. The Curie temperature was obviously increased with increasing of $(Bi_{0.5}K_{0.5})TiO_3$ content. The BKT ceramics (x=0.05) sintered at $1400^{\circ}C$ for 4h display low resistivity values of $10^1-10^2$ ohm cm at room temperature, PTCR effect(jump) of 1.05*$10^3$, and the Curie temperature of $T_c=141^{\circ}C$.

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Dielectric and Piezoelectric Properties of "Lead-free" Piezoelectric Rhombohedral Ba(Ti0.92Zr0.08)O3 Single Crystals

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.53 no.2
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    • pp.171-177
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    • 2016
  • Rhombohedral $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.85, piezoelectric charge constant ($d_{33}$) of about 950 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 40 [${\times}10^{-3}Vm/N$]. Especially the $d_{33}$ of (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals was by about six times higher than that of their ceramics. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($d_{33}$, $g_{33}$) are higher than those of soft PZT ceramics, it is expected that rhombohedral (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications such as actuator, sensor, and transducer.

$BaTiO_3-(Bi_{1/2}Na_{1/2})TiO_3$ system for PTC Thermistor (PTC 써미스터를 위한 $BaTiO_3-(Bi_{1/2}Na_{1/2})TiO_3$)

  • Park, Yong-Jun;Lee, Young-Jin;Paik, Jong-Hoo;Kim, Dae-Joon;Lee, Woo-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.91-92
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    • 2007
  • An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

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Dielectric Properties of Barium Titanate with $Sb_2O_3$ and ZnO ($Sb_2O_3$와 ZnO를 첨가한 Barium Titanate의 유전성)

  • 윤기현;김종우;송효일
    • Journal of the Korean Ceramic Society
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    • v.21 no.2
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    • pp.121-126
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    • 1984
  • The dielectric properties of $BaTiO_3$ containing 0~0.3mol% and ZnO respectively as additives were investigated as a function of temperature from $25^{\circ}C$ to 14$0^{\circ}C$ and frequency from 24 KHz to 15MHz. The density of sintered $BaTiO_3$ was increased with addition of increasing to 0.15mol% amounts of $Sb_2O_3$ and the dielectric constant was also increased. This is due to space charge polarization with Ba vacancies. Above 0.15mol% $Sb_2O_3$ the density was decreased and the dielectric constant was also decreased due to occuring the discharge through voids. The density of sintered $BaTiO_3$ was decreased with addition of increasing to 0.15mol% amounts of ZnO and the dielectric constant was decreased due to occuring the discharge through voids. Above 0.15mol% ZnO the density was increased and the dielectric constant was also increased.

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Development of Thermal Sensor Devices in the $BaTiO_3$ Systems ($BaTiO_3$계 박막형 열전센서소자 개발)

  • Song, Min-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.100-104
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    • 2003
  • $BaTiO_3$ ceramic thin films were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

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$(Bi_{1/2}Na_{1/2})TiO_3$ - system for PTC Thermistor (PTC 써미스터를 위한 $(Bi_{1/2}Na_{1/2})TiO_3\;-\;BaTiO_3$)

  • Paik, Jong-Hoo;Park, Yong-Jun;Kim, Chang-Il;Lim, Eun-Kyung;Lee, Mi-Jae;Lee, Young-Jin;Kim, Dae-Joon;Lee, Woo-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.251-251
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    • 2007
  • A new type of a lead-free positive temperature coefficient of resistivity(PTCR) material. based on $(Bi_{1/2}Na_{1/2})TiO_3\;-\;BaTiO_3$ solid solution ceramics has been developed. The effect of $Nb_O_5$ and $Y_2O_3$ content on the electrical properties and the microstructure of (1-x) $(Bi_{1/2}Na_{1/2})TiO_3\;-\;x\;BaTiO_3$ (BNBT) ceramics made using a conventional mixed oxide process has been studied. The Curie Temperature was obviously increased with the increasing of $(B_{0.5}Na_{0.5})TiO_3$ content. The Y-doped BNBT ceramics(x=0.02) display low resistivity values of $10^2-10^3$ ohm*cm at room temperature and the Curie Temperature of $Tc=155^{\circ}C$.

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The Influence of PbO Content on the Crystallisation Characteristics and Dielectric Properties of Glass Frit for LTCC (LTCC용 Glass Frit의 결정화 특성 및 유전 특성에 대한 PbO 함량의 영향)

  • Park, Jeong-Hyun;Kim, Yong-Nam;Song, Kyu-Ho;Yoo, Jae-Young
    • Journal of the Korean Ceramic Society
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    • v.39 no.5
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    • pp.438-445
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    • 2002
  • In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.