• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.209-209
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• 2010

Multiferroic properties of $BaTiO_3-CuFe_2O_4$ thin films grown on highly-textured Pt(111)/$TiO_2/SiO_2$/Si(100) substrates were studied. $CuFe_2O_4$ ceramic target was synthesized by mixing oxide powders of CuO, $Fe_2O_03$, $BaTiO_3$ ceramic target was also prepared separately. The film structure was of bi-layer type, where $BaTiO_3$ layer lies underneath of $CuFe_2O_4$ layer, where both layers were grown by pulsed laser deposition technique. We will report the ferroelectric and magnetic properties of $BaTiO_3-CuFe_2O_4$ bi-layer films in some detail.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• 반도체디스플레이기술학회지
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• 제11권3호
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• pp.63-67
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• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.217-220
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• 1997

(Ba,Sr)TiO$_3$ thin film capacitors were prepared on SiO$_3$/Si(100)wafer by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Microstructural properties of (Ba,Sr)TiO$_3$ thin films were investigated by the SEM, XRD. The thickness and grain size were studied for the varying of RF power and temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.374-378
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• 1999

Thin Films of BaYTiO system were Prepared by frequency (rf)/dc magnetron sputtering method. The preparation of target were accomplished by the mixed oxide method, and their composition consisted of the $Ba_{0.997}$ $Y_{0.003}$Ti $O_3$+0.5 $SiO_2$+x $M_{n}$O(x=0, 0.073, 0.1, 0.127, 0.154). The average particle size of (Ba,Y)Ti $O_2$ system ceramics with Mn $O_2$ additives increases as the amount of MnO additives increase and reaches the maximum grain growth when the amount of MnO is 0.127(mol%).).).).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권6호
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• pp.291-296
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• 2006

In this study, the sputtered BTO film was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO ($BaTiO_3$) thin film using the $BaTiO_3$-mixed abrasive slurry (BTO-MAS) was higher than that using the $TiO_2$-mixed abrasives slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%) below 5% was obtained in each abrsive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.125-128
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• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature by Pulsed Laser Deposition(PLD). This BST thin films showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~684 and dielectric loss was ~0.01 when substrate temperature was 75$0^{\circ}C$. Charge storage density of BST thin film was 4.733 [$\mu$C/$\textrm{cm}^2$] and estimated charging time was 0.15 nsec. Leakage current density of BST thin film was below 10$^{-7}$ [A/$\textrm{cm}^2$] at 3V. 3V.V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

• 한국세라믹학회지
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• 제31권8호
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• 전자공학회논문지A
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• 제31A권9호
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• pp.89-95
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• 1994

BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.