• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.12-20
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• 2000

Dielectric property of Ba-modified 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 ceramics having compositions near the morphotropic phase boundary was investigated. For the specimens having Ba contents between 0 and 20 at%, the average transition temperature was decreased linearly with increasing Ba contents and the degree of hysteresis was also decreased with increasing Ba contents. The maximum dielectric constants (K), electric field induced polarization(P) and electrically-induced strain(S) were found to exihibit a maximum value at∼3 at% of Ba. The increase of S and the decrease of hysteresis by minor additions of Ba impurities indicated the development of new higher perfomance actuator materials. The composition of Ba-PMN-PT (10/65/35) may be appropriate for capacitor materials because of low hysteresis and high polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.205-205
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• 2008

PZT 세라믹은 우수한 유전 및 압전특성을 갖고 있어 변압기, 센서 및 엑츄에이터 등에 널리 응용되고 있다. 그러나, 우수한 특성에도 불구하고 PZT세라믹스의 소결시 PbO의 높은 유독성 및 휘발로 인하여 환경오염을 야기 시킨다. 그러므로 PbO로 구성된 세라믹을 대체하기 위한 우수한 압전특성을 가진 비납계 세라믹스 개발이 연구의 주류를 이루고 있다. 그 중 비납계 NKN와 BZT는 대체물질로 많이 관심을 받고 있다. 이는 일반적인 NKN조성은 우수한 압전성과 높은 큐리온도를 가지고 있을 뿐만 아니라, BZT조성의 Zr성분이 큐리온도를 낮추거나 유전특성을 졸게 하여 유전율 곡선을 완화하게 하는 특징이 있다. 하지만 NKN은 $1140^{\circ}C$이상의 소결온도에서 K의 휘발특성으로 인해 소성 후에도 주변의 수분을 흡수하는 조해성이 발생하는 문제가 발생한다. 그래서 본 연구에서는 낮은 온도에서 NKN계 세라믹스의 밀도를 증가시킬 뿐만 아니라, 우수한 유전 및 압전특성을 갖는 세라믹스를 제조하고자 비납계 $0.94(K_{0.5}Na_{0.5})NbO_3-0.06Ba(Zr_{0.05}Ti_{0.95})O_3$ (NKN-BZT)의 조성을 사용하였고 소결조제로는 $MnO_2$, NiO, $Bi_2O_3$, ZnO, $Li_2CO_3$, CuO등을 변화주어 유전 및 압전 특성을 알아보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.651-655
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• 2013

$(Ba_{0.85}Ca_{0.15})(Ti_{0.9}Zr_{0.1})O_3$ + 0.04 wt% $CeO_2$ lead-free ceramics were synthesized by conventional sintering process and the effect of calcination temperature on microstructure, dielectric and piezoelectric properties were investigated. Improved piezoelectric properties have been observed at $1,125^{\circ}C$ calcination temperature which show the optimal electrical properties, $k_p$~0.457, $d_{33}$~367 pC/N, $Q_m$~158 and $T_c$~$85^{\circ}C$. These results show that the piezoelectric properties can be improved by appropriate calcination temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.81-85
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• 1996

Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.1
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• pp.35-48
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• 1995

마이크로회로내에서 티탄산바륨 중 바륨의 일부가 납으로 치환됨에 따른 전기적 특 성의 변화를 확인하기 위하여 MOD(금속유기화합물 분해법)공정에 의 barum 2-ethylhexanoate, barium neodecanoate, lead 2-ethylhexanoate 및 titanium dimethoxy 야 -2-ethylhexanoate 와 같은 MOC(금속 유기화합물) 들을 합성하고 공통 용매에 대한 용해 도를 시험하였다. 그 결과 barium 2-ethylhexanoate 만 p-xylene에 대한 용해도가 낮았으며 그 외의 다른 MOC들은 모두 p-xylene 단일 용매에 매우 잘 용해되었다. 바륨의 일부가 납 으로 치환된 티탄산 납바륨 박막은 MOC 혼합용액을 ITO/glass, Pt/SiO2/Si 및 Pt/Ti/SiO2/Si 웨이퍼 기판 위에 spin coating 하고 소성하여 얻었다. 이와 같이 얻어진 박막 의 전기적 특성을 측정하고 그 결과를 비교 고찰하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.252-258
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• 2001

($Ba_{0.7}Sr_{0.3})TiO_3$thin films were perpared on ITO-coated glass substrate by spin-coating method. The sol was sonicated in an ultrasonic bath to promote homogenization and the results were compared with untreated case. By application of the sonication process, crystallization temperatures of films were reduced, microstructers of films were more uniform and denser and the surface roughness of the films was lower from 8.4nm to 5.6nm. In addition, optical transmittances and electrical properties of films prepraed from sonicated sol were superior to those of films from untreated.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1429-1436
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• 1994

We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.152-158
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• 1995

Eteching characteristics of the Indium Tin Oxide (ITO), which is transparent conductor, was investigated with CH4/H2 and Ar as etching gases for the Reactive Ion Etching (RIE). With CH4/H2 for the etching gas, the highly selective etching characteristics for the ITO on GaAs was obtained. It was examined that the dominant etching parameter for the selective etchning of ITO on GaAs structure was the chamber pressure. But, the etching selectivity for ITO on InP was poor eventhough we tried systematic etching. RIE etching conditins using CH4/H2 gas was limited due to the formation of polymer on the substrates. In the case of Ar gas for the reactive gas, the selectivity of ITO on BaTiO3 was above 10. The etch rete of ITO was more sensitive to the etching parameters than that of BaTiO3, which was almost constant with different etching parameters.