• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.895-898
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• 1998

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.178-183
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• 2016

Ferroelectric relaxor ceramics with $BaTiO_3-NaNbO_3-Bi(Mg_{1/2}Ti_{1/2})O_3$ ternary compositions (BT-NN-BMT) have been prepared by sol-gel powder synthesis and consequent bulk ceramic processing. Through the modified chemical approach, fine and single-phase complex perovskite compositions were successfully obtained. Temperature and frequency dependent dielectric properties indicated typical relaxor characteristics of the BT-NN-BMT compositions. The ferroelectric-paraelectric phase transition became diffusive when NN and BMT were added to form BT based solid solutions. BMT additions to the BT-NN solid solutions affected the high temperature dielectric properties, which might be attributable to the compositional inhomogeneity of the complex perovskite and resulting weak dielectric coupling of the Bi-containing polar nanoregions (PNRs). The temperature stability of the dielectric properties was good enough to satisfy the X9R specification. The quasi-linear P-E response and the temperature- stable dielectric properties imply the high potential of this ceramic compound for use in high temperature capacitors.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.108-108
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• 1999

• Journal of the Korean Chemical Society
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• v.39 no.10
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• pp.806-811
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• 1995

The electrical properties for $(Ba,Sr)_{1-x}Y_xTiO_3$(x=0.001∼0.009, BSYT) with a positive temperature coefficient of resistivity(PTCR) effect were investigated. The BSYT powder was prepared by oxalate coprecipitation method. It was found that the large PTCR effect was appeared up to 0.3 mol% and decreased above 0.5 mol% of the yttrium concentration. The plot of temperature vs. $1{\varepsilon}$m(T) above Curie temperature($T_c$) was agreed with Curie-Weiss law. The potential barrier calculated from measured resistivity and dielectric constant of specimens was high up to 0.3 mol% and reduced above 0.5 mol% of yttrium concentration as the curve of PTCR effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.208-213
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• 2020

Four types of BaTiO₃ powders are prepared and successfully deposited on glass and Pt/Si substrates using the aerosol deposition process. Particles with sizes of 0.45 ㎛ and 0.3 ㎛ are selected as the starting powder, while those powders are treated using a different milling method. The jet-milled and ball-milled powders not only showed a smaller particle-size distribution, but compared with the non-milled powder, it also had a higher deposition rate using the uniformly generated aerosol. Although the films deposited using particles with size 0.45 ㎛ exhibited some craters on the surface, significantly flat film surfaces were obtained. However, particles with size 0.3 ㎛ create a slightly rough film surface, but the dielectric constant was greater than in the case involving particles with size 0.45 ㎛. Consequently, a suitably large particle size significantly influences the deposition rate and improvement in the surface roughness, and a uniform particle size distribution appears to contribute to an improved dielectric constant. Therefore, it is believed that the dielectric properties along with the growth characteristics can be enhanced by limiting particle size and shape.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.204-208
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• 1995

The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.338-341
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• 2002

$(Ba_{1-x}Sr_{0.4}Ca_x)TiO_{3}$ (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. Their structural and dielectric properties were investigated with variation of composition ratio and $Al_{2}O_{3}$ doping contents. As results of the X-ray diffraction and microstructure analysis, the grain size of BSCT thick films was decreased with increasing $Al_{2}O_{3}$ amount. The thickness of BSCT thick films by 4-coating/drying is about $110{\sim}120{\mu}m$. The tunability increased with decreasing Ca content, and the BSCT(50/40/10) specimen doped with 1.0wt% $Al_{2}O_{3}$ showed the highest value of 12.94% at 5kV /cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.551-557
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• 1996

To decrease the hysteresis of electric field induced strain, $Y_{2}$ $O_{3}$ dopant of which amount is 0-0.8wt% was added to the (P $b_{0.73}$B $a_{0.27}$)(Z $r_{0}$ 75/ $Ti_{0.25}$) $O_{3}$ ceramics. Electromechanical coupling coefficients of the specimen with 0.1 Wt% $Y_{2}$ $O_{3}$ were $k_{p}$=26.9% and $k_{31}$ =20.4%, which exhibited the maximum value at the constant bias electric field of 10 kV/cm. At the same $Y_{2}$ $O_{3}$ addition amount, electric field piezoelectric constant ( $d_{3l}$) and strain(.DELTA.l/l) showed the maximum values of 139.6*10$^{-12}$ [C/N] and 126*10$^{-6}$ .DELTA. l/l respectively at 10 kV/cm electric field. And the hysteresis of strain showed the minimum value of 17.5%. So, we propose that it is possible to apply PBZT system with $Y_{2}$ $O_{3}$ dopant to the electrostrictive actuator.r.r.