• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.202-203
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• 2005

To recognize whether admixture affects some $(Ba_{0.6}Sr_{0.4})TiO_3$, powder in this research $Li_2CO_3$, MgO, $MnO_2$ adding each 3 wt % by Tape casting method thick film make. Sitering temperature lowered 1300$^{\circ}C$ adding $Li_2CO_3$, and density is 5.942g/$cm^3$, and specific inductive capacity increases about decuple and displayed 4000. Climbed sitering temperature 1400$^{\circ}C$ adding MgO, specific inductive capacity reduced 1/2 times. Lowered sintering temperature 1325$^{\circ}C$ low adding $MnO_2$.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.149-152
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• 2007

[ $(Ba_{0.6}Sr_{0.3}Ca_{0.1})TiO_3$ ](BSCT) thick films doped with 0.1 mol% $MnCO_3\;and\;Yb_2O_3(0.1{\sim}0.7mol%)$ were fabricated by the screen printing method on the alumina substrates. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The exothermic peak was observed at around $680^{\circ}C$ due to the formation of the poly crystalline perovskite phase. The lattice constants of the BSCT thick film doped with 0.7 mol% is 0.3994 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about $4.2{\mu}m$. The average thickness of all BSCT thick films was approximately $70{\mu}m$. Relative dielectric constant and dielectric loss of the specimen doped with 0.7 mol% $Yb_2O_3$ were 2823 and 3.4%, respectively. The Curie temperature of the BSCT thick films doped with 0.1 mol% $Yb_2O_3$ was $46^{\circ}C$.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.536-544
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• 1997

본연구는 45 BaO-20B$_{2}$O$_{3}$-35Fe$_{2}$o$_{3}$(wt%)의 조성의 유리에 핵형성제로서 TiO$_{2}$또는 ZrO$_{2}$를 첨가한 조성에서는 barium ferrite(BaFe$_{12}$O$_{19}$)가 결정화되었다. TiO$_{2}$를 9wt%첨가한 조성에 대하여 활성화에너지와 진동수는 각각 235.45kJ/mol, 진동수 6.89x$10^{17}$S$^{-1}$이었으며, Avrami지수는 1$\leq$n $\leq$로서 일방향의 결정성장으로 나타났다. 또한, ZrO$_{2}$9wt% 첨가 조성에서는, 활성화에너지와 진동수는 각각 173.86kJ/mol, 2.65x$10^{14}$S$^{-1}$이었으며, Avrami지수는 2$\leq$n$\leq$3로서 이방향의 결정성장을 나타내었다.내었다.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.816-819
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• 1995

(Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.61-61
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• 1998

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.114-121
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• 1996

Thin film Ba$^{0.7}Sr^{0.3}TiO^{3}$ (BST) capacitors were fabricated on SiO$_{2}$/Si substrates by RF magnetron sputtering method and characterized at microwave frequencies ranging from 40 MHz to 1GHz to examine the dielectric dispersion of the capacitors. The BST thin films were electrode material of BST thin films capacitor which is known as one of the best electrode materials for BST films. 50$\AA$-thick titanium (Ti) layers were introduced to increase adhesion between bottom Pt and SiO$_{2}$. The leakage current density of the capacitors was about 1.7${\times}10^{7}A/cm^{2}$ at 1.5V and the dielectric constant was about 140 at 1MHz. Microwave measurement patterns having a coplanar waveguide type were fabricated and their S parameters were measured using network analyzer. After de-embedding parasitic components in microwave measurement patterns nearly frequency-invariant dielectric constant of about 120 was extracted in the measurement range of 40 MHz to 1 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.84-84
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• 2009

$BaTiO_3$는 perovskite 구조를 가지는 대표적인 강유전체 재료로서 MLCC (Multi Layer Ceramic Capacitor), PTC thermistor등에 널리 사용되어지고 있다. 최근 고용량 MLCC의 상업화와 함께 나노크기를 갖는 tetragonal phase의 $BaTiO_3$ 입자를 합성하기 위한 다양한 제조방법이 제시되고 있다. 또한 유전특성과 온도특성 및 신뢰성을 향상시키기 위해 많은 첨가제들이 연구되어지고 있다. 따라서 본 연구에서는 희토류 원소인 $Y_2O_3$를 첨가하여 유전특성 및 온도특성을 향상시키고자 하였다. 본 실험에서는 150nm 크기를 갖는 pure $BaTiO_3$ 분말을 사용하고 $Y_2O_3$의 양은 0.02 ~ 0.1wt%로 변수를 주어 첨가하였으며, 최적의 소결 조건을 찾기 위하여 1200, 1230, $1250^{\circ}C$에서 소결을 진행하였다. 실험방법으로는 균일한 혼합을 위하여 Iso-alcohol을 이용하여 48시간 ball-mill 하였으며 오븐에서 건조 후 ${\Phi}15$로 성형하여 소결을 진행하였다. 실험결과로는 $Y_2O_3$ 첨가량이 0.02wt% 부터 상온부터 상전이 온도 부근의 유전율 기울기는 완만해 지는 것을 확인할 수 있었으며, 소결시편의 정방정비 (tetragonality)도 뚜렷하게 나타났다. $Y_2O_3$ 첨가랑이 0.1 wt% 일 때는 첨가량의 증가로 인해 강유전성이 상쇄됨을 나타냈다. 이는 $2450^{\circ}C$에 이르는 매우 높은 용융온도와 $2350^{\circ}C$까지 상전이가 는 $Y_2O_3$를 미량 첨가할 때, 고온에서 높은 화학적 안정성과 내열성을 가져 온도 안정성이 향상된 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.73-76
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• 2009

ZnBo이 첨가된 (Ba,Sr)$TiO_3$ 후막을 이용한 planner capacitor의 전기적 특성을 조사하였다. 후막은 알루미나 기판에 스크린 프린팅기법에 의해서 제작되었고 $1200^{\circ}C$의 온도에서 소결하였다. 출발 물질인 BST의 저온 소결을 위해서 ZnBO를 첨가하였다. ZnBO가 1, 3, 5 wt% 첨가된 경우 소결온도가 $1200^{\circ}C$의 낮은 온도에서 소결되는 것을 확인했으며 ZnBO의 첨가랑이 증가함에 따라서 유전율은 감소하고 유전손실는 증가 하는 현상이 나타났다. 1, 3, 5 wt%의 ZnBO가 첨가된 (Ba,Sr)$TiO_3$는 각각 756, 624, 554의 유전율를 보였다. 또한 ZnBO의 양이 증가함에 따라서 누설전류가 감소되는 것을 확인하였고, ZnBO의 첨가가 grain의 성장과 density가 증가되어 누설전류의 양이 감소하게 되는 것으로 분석되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.125-128
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• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature by Pulsed Laser Deposition(PLD). This BST thin films showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~684 and dielectric loss was ~0.01 when substrate temperature was 75$0^{\circ}C$. Charge storage density of BST thin film was 4.733 [$\mu$C/$\textrm{cm}^2$] and estimated charging time was 0.15 nsec. Leakage current density of BST thin film was below 10$^{-7}$ [A/$\textrm{cm}^2$] at 3V. 3V.V.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1493-1494
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• 1998

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified $BaTiO_3$ systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between $1325^{\circ}C$ and $1375^{\circ}C$. When Ti/Ba mole ratio was 1.005 and sintering temperature was $1350^{\circ}C$, the breakdown voltage shows 260[V /mm].