• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.789-794
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• 1994

In this study, the structural and microwave dilelectric properties of 0.15BaO-0.15SmS12TOSI3T-0.7TiOS12T ceramics with sintering and annealing conditions were investigated. In the specimen sintered at 1350 [$^{\circ}C$], dielectric constant and quality factor were good values of 80.19,2006 (fS10T=4.6851[GHz]). To improve the $\tau$S1fT of specimen which was manufactured by the optimumsintering condition (1350[$^{\circ}C$],2[Hr.]), annealed from 2[hr.] to 16[hr.] at the annealing temperature of 1200 [$^{\circ}C$]. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. In the specimen of 4[hr.] annealed, the temperature coefficient of resonant frequency was minimum value, and increased with increasing the annealing time.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.587-594
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• 1994

(Ba, Sr)TiO3-based PTCR ceramics were sintered and cooled down with various cooling conditions in the air. AES was applied to investigate the composition change in the grain boundary and bulk area of oxidatively cooled samples. Ba component was deficit in grain boundary region, while oxygen was abundant than bulk region. The discrete changes of oxygen binding energies were confirmed in the grain boundary region of the heavily oxidized samples. It was supposed that the large binding energy shift resulted from the oxidation of the segregated Mn in grain boundary region and this idea was supported by the DV-X$\alpha$ molecular energy simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.103-106
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• 2002

The applicability of models based on fractal morphology to characterize $(Ba\;Sr)TiO_{3}$ thin film surfaces was investigated. The fractal morphology of coated barium strontium titan oxide thin film surfaces was described using fractal dimension from scanning electro microscopy image. The $(Ba\;Sr)TiO_{3}$ coating were deposited on silicon wafers using $(Ba\;Sr)TiO_{3}$ solution and spin coater. BST solution was composited by mol ratio, and then spin-coated from 3 times to 5 times coating on $Pt/SiO_{2}/Si$ substrate. Qualitative thin film analysis was performed with scanning electro microscopy (SEM), and surfaces parameters such as average grain diameter, roughness exponent and fractal dimension were determined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.244-247
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• 2002

NdBaCuO thin films were prepared on $SrTiO_{3}$ substrates by RF magnetron sputtering. These as-grown films were classified into 3type. The resistivity of the deposited films are usually lower than of the YBCO film. The Tc (onset) and Tc (R=0) in the optimized thin films are as high as 90 and 80K, respectively. These as-grown films are highly uniform and semi-trans parent and have a room temperature resistivity of $0.3m{\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.31-31
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• 2008

고주파 잡음 발생과 고집적화 문제 해결을 위해 고용량 디커플링 캐패시터를 기판에 내장하는 연구가 활발히 진행되고 있다. 본 연구에서는 초고주파 환경에서 고용량 기판 내장형 디커플링 캐패시터로의 응용을 위해 $BaTiO_3$박막을 에어로졸 데포지션 법을 이용하여 12~0.2 ${\mu}m$의 두께로 제조하였고 그 유전특성을 조사하였다. 그결과, 1 MHz에서 permittivity가 70, loss tangent은 3% 이하였으며, capacitance density는 $1{\mu}m$의 두께에서 59 nF/$cm^2$이었다. 하지만, 박막의 두께가 $1{\mu}m$ 이하에서는 XRD를 통해 결정성이 확인 되었음에도 큰 누설전류로 인해 유전특성을 확인할 수 없었다. 이 누설전류의 발생 원인을 조사하기 위해 $BaTiO_3$박막의 표면의 미세구조를 SEM으로 관찰한 결과 여러 결함들이 확인되었으며, 또한 전극 직경의 크기를 1.5 mm에서 0.33 mm로 작게 변화시킴으로서 그 유전특성을 조사하여 박막의 불균일성과 박막화의 가능성을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.22-26
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• 2013

PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.325-328
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• 1991

In this study, $0.085Ba(La_{1/2}Nb_{1/2})O_3-0.915Pb(Zr_yTi_{1-y})O_3$(y=0.45, 0.50, 0.55, 0.60, 0.65[mol]) transparent electrooptic ceramics were fabricated by two-stage sintering method. Increasing the $PbZrO_3$ contents, dielectric constant was increased and Curie temperature was decreased. In the composition of 0.55[mol] $PbZrO_3$, electromechanical coupling factor was 0.43. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the compositions of 0.65, 0.60, 0.55[mol] $PbZrO_3$ was applicable to electroopticmemory device and the compositions of 0.50, 0.45[mol] $PbZrO_3$ was applicable to linear electrooptic device.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.161-166
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• 2005

Glass formation, thermal property and crystallization behavior were investigated in $xK_2O-(33.3-x)BaO-16.7TiO_2-50SiO_2(mole\%)$ with fresnoite($Ba_2TiSi_2O_8$) crystal by replacement BaO for $K_2O$. As x(0$\le$x$\le$20) contents increased, glass formation became easy, and crystallization temperature moved on to the low temperature. Crystal phase of the $Ba_2TiSi_2O_8$ was confirmed by XRD, and the replaced x was not effected on the formation of new crystals. The kinetics of crystallization of fresnoite were studied by applying the DTA measurements carried out at different heating rates. The average avrami exponent(n) and activation energy were changed $2.26 {\pm}0.1,\;2.03 {\pm}0.1,\;1.93{\pm}0.15$, $279 {\pm}12kJ/mole,\;302{\pm}7kJ/ mole,\;319{\pm}1kJ/mole$ according to x contents, respectively. The replaced x improved the orientation of crystal growth.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.65-65
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.75-78
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• 2002

The dielectric properties for Ni electrode multilayer ceramic chip capacitor for Y5V has been studied with $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_2+MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt%, glass frit 1 wt% composition. The m ratio in the range of 1.006 ~ 1.012 have dielectric constant 9,500 ~ 14,500 and insulation resistance 390 ~ 460 $G{\Omega}$. Using the dielectrics, nikel electrode multilayer chip capacitor with Y5V, 104Z in EIA 0603 size specific capacitance were developed.