• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.243-246
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The structural, dielectric and electrical properties of BST thin films were investigated with Ar/O$_2$ ratio. Dielectric constant and dielectric loss of the BST thin film were about 1020 and 2.0[%], respectively. (at RF power 80W, post annealing temperature $650^{\circ}C$, deposition pressure of 5mTorr and Ar/O$_2$=80/20). For the BST(Ar/O$_2$=80/20) thin film with Polarization switching cycles of 10$^{10}$ , remanent polarization and coercive field were 0.084[$\mu$C/cm$^2$], 1.954[kV/cm], respectively.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.185-187
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• 1993

0.15BaO-$0.15Sm_2O_3-0.7TiO_2$, ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering temperature and annealing time. In the specimen sintered at 1350[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency had a good values of 80.19, 2006 (at 4.6851[GHz]), -27.54[ppm/$^{\circ}C$], respectively. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. Temperature coefficient of resonant frequency was minimum value (-1.28[ppm/$^{\circ}C$]) at 4 [hr] annealed.

• 전기의세계
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• v.28 no.5
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• pp.39-43
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• 1979

The aging of permittivity of a barium titanate dielectrics doped with La$_{2}$O$_{3}$ under zero and low DC field has been studied. The aging rate was decreased as the amount of La$_{2}$O$_{3}$ addition is increased to 3 mole%. The zero field aging rate of barium titahate doped with La$_{2}$O$_{3}$. 3TiO$_{2}$ was similar to that doped with La$_{2}$O$_{3}$.5V/mil DC field aging rate of La$_{2}$O$_{3}$.3TiO$_{2}$ doped sample, howeve, was lowered to that of La$_{2}$O$_{3}$ doped sample. When the phase transformation is occured from the paraelectric state to the ferroelectric state, 90.deg. domains are mucleated in order that the system becomes thermodynamically more stable. It is concluded that the aging phenomenon is occured as the dielectric constant is decreasing by the nucleation and growth of 90.deg. domains.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.954-960
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• 2003

To develop mobile phone antenna modules, glass-ceramics composites that are 20∼80 dielectric constant materials which has been fabricated. The glass-ceramics composites were based in the BNT (BaO-Nd$_2$O$_3$-TiO$_2$), and properties-a sintering and dielectric property-were investigated in its composites according to the $K_2$O-CaO-P$_2$O$_{5}$ system glass frits. The prepared ceramics were sintered at 900∼120$0^{\circ}C$ with the glass frit contents ranging from 10 to 40 wt%. The shrinkage and relative density grew into increasing glass frits and sintering temperature. Sintered composites showed the tendency that the dielectric constant ($\varepsilon$$_{r}$) and quality factor (Q${\times}$f) decreased in increasing glass frits and sintering temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.392-398
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• 2006

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.821-826
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• 2008

Nanocrystallized glasses with the composition of $(50-x)BaO-xTiO_2-50SiO_2$ (x=10, 15, 16.7 and 20) have been prepared by heat-treatment at $T_x$ (crystallization onset temperature) for 3 h, and their optical properties, photoluminescence (PL), XRD and Raman spectra have been examined. The absorption edges of the glasses were red-shifted and the absorption coefficient increased with an increase of $TiO_2$. The glass subjected to the heat-treatment showed a dense formation of ${Ba_2}{TiSi_2}{O_8}$ crystals. The XRD and Raman results show that the nanocrystallized glasses formed fresnoite phase up to $TiO_2$ concentrations of 15 mol%. Further-more, blue luminescence with a peak at the wavelength of around 470nm was observed in the nanocrystallized glass, demon strating the optical multifunctional nanocrystallized material such as non-linear optics and photo-luminescence. It is thought that the blue luminescence from the ${Ba_2}{TiSi_2}{O_8}$ nanocrystallized glass originated from the presence of $Ti^{4+}$ incorporated into the fresnoite-type structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.221-226
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• 1998

Amorphous (Ba, Sr)$TiO_3$[BST] layer(30, 70 nm) was introduced between crystalline BST and $RuO_2$electrode to realize double-layered BST structure in order to improve the properties of BST film. The structure and surface morphology of double-layered BST film were modified by the application of amorphous BST layer; that is, surface became smoother and grain size increased abruptly. Amorphous layer thicker than 30 nm was effective to hinder the influence of $RuO_2$surface on the structure of as-grown BST films by in-situ process. Dielectric constant of double-layered BST film was improved dramatically from 152 to 340 and leakage current was lowered from $1.25{\times}10^{-5}A/{\textrm}{cm}^2);to;6.85{\times}10^{-7}A/{\textrm}{cm}^2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.309-313
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• 1997

(Ba$_{x}$Sr$_{l-x}$)TiO$_3$(BST) thin fi1ms with various Ba/Sr ratios were deposited on Pt(80nm)/SiO$_2$(100nm)/Si by RF magnetron sputtering. BST thin films which have x=0.6, 0.5, 0.4 were studied dielectric properties with temperature variation. The frequency was used from 100Hz to 1MHz for measuring dielectric constant. The measurement conditions of dielectric constant with Temperature Variation were 1KHz and 2$0^{\circ}C$. As a result, the dielectric constant of BST thin film was about 425 and loss factor was 0.013. Also, with increasing Temperature, the dielectric constants of BST thin films were gradually decreased.sed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.3-5
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• 1993

It is very important that a spectrum of reflectance is in accord wi th a spectrum of absorbance for a effective heating. Therefore. the objective of this study was to achieve a technical composite for material plan which PTC thermistor increase a radiation property of far-infrared and keep a characteristic of R-T The Ceramic speciman studies had the composition $BaTiO_3$ with additive of 1.67 $Al_2O_3$, 3.75 $SiO_2$, 1.25 $TiO_2$, 0.15 $Sb_2O_3$ and 0.00-0.182 $MnO_2$. $MnO_2$ amounts of additives was both increase on the anomalous resistivity-temperature characteristics and high efficiency on the radiation properties bodies of far-infrared. This result shows that specimens produced high emissivity(average 0.8) of far-infrared at 4.5-15$[{\mu}m]$ by measuring a characteristic of IR and R-T.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.