• Title/Summary/Keyword: $BaTiO_{3}$

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Preparation and PTC Properties of Thin Films BaTiO$_3$ System (BaTiO$_3$계 세라믹 박막의 제조와 PTC특성)

  • 박춘배;송민옹;김태완;강도열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.05a
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    • pp.17-20
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    • 1994
  • PTCRl(positive temperature coefficient of resistivity) thermistors in the thin file BaTiO$_3$ system were deposited by radio frequency (13.56 MHz) and dc radio frequency (13.56MHz) and dc magnerton sputter equipment. R-T(resistivity -temperature) properties was investigated as a function of substrate and the temperature variation. The specimens make a comperison between the thin films and the bulk in the resistivity variation. Substrate temperature. deposition time. and forward power are deposited at the 400$^{\circ}C$, 10 hours, and 210 watt. respectively. The aim of this work is to obtain lower than bulk specimen resistivity in thin films BaTiO$_3$ system thermistor by RF/DC magnetron sputter equipment.

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Lanthanum doped $BaTiO_3$ ceramics

  • Korobova, N.;Soh, Dea-Wha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.287-290
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    • 2003
  • Sol-gel processing of $BaTiO_3$ ceramics doped with La(0.01~1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum iso-propoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results showed that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of $BaTiO_3$ powders and sintering conditions used.

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Phase Formation of $BaTiO_3$ Thin Films by Sputtering (Sputtering법에 의한 $BaTiO_3$ 박막의 상형성에 관한 연구)

  • 안재민;최덕균;김영호
    • Journal of the Korean Ceramic Society
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    • v.30 no.8
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    • pp.657-663
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    • 1993
  • BaTiO3 sputtering targets of 3 inch diameter were prepared by sintering the CIP (Cold Isotatic Pressing) compacts at 136$0^{\circ}C$ for 3hrs. The apparent density and grain size were 97% and 30${\mu}{\textrm}{m}$, respectively. After BaTiO3 films were deposited on Si and Pt/Ti/SiO2/Si substrates using these targets, films were annealed at various conditions and the crystallization behavior, reaction with the substrate and the electrical properties were investigated. The films on both substrates required 5~20hrs furnace annealing for crystallization at the temperatures from $600^{\circ}C$ to 80$0^{\circ}C$. For the films on Si substrate, interaction between the film and the substrate was suppressed upt o $700^{\circ}C$ for 10 hrs and the relative dielectric constant was 30. As the annelaing temperature and time were increased, the relative dielectric constants of the films decreased due to the formation of silicate phases through the reaction with the substrate. For the BaTiO3 films on Pt/Ti/SiO2/Si substrate, the reaction with the substrate was further reduced when the annealing condition was identical to that for Si substrate, but the reaction between the layers in Pt electrode took place above $700^{\circ}C$. When the films were annealed at $600^{\circ}C$ where the stability of Pt electrode was sustained, relative dielectric constant was increased to 110 since the reaction with substrate was effectively reduced even for a longer annealing time and the crystallization was enhanced.

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Piezoelectric properties of (Bi0.5Na0.5)TiO3-BaTiO3 ceramics prepared by reactive templated grain growth method (Reactive Templated Grain Growth법에 의해 제조된 (Bi0.5Na0.5)TiO3-BaTiO3 세라믹스의 압전 특성)

  • Ahn, Byung-Guk
    • Journal of Sensor Science and Technology
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    • v.16 no.3
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    • pp.234-239
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    • 2007
  • Crystallographically {h00}-oriented $0.94(Bi_{0.5}Na_{0.5})TiO_{3}-0.06BaTiO_{3}$ (0.94BNT-0.06BT) ceramics was prepared by the Reactive Templated Grain Growth (RTGG) method using the $Bi_{4}Ti_{3}O_{12}$ template. The sheets prepared by tape-casting of slurries containing the templates and starting materials are cut, laminated, and pressed. Then burn-out and sintering was conducted. Also, to compare with the 0.94BNT-0.06BT ceramics prepared by the RTGG method another 0.94BNT-0.06BT ceramics was prepared by the solid-state method. In the optimum of this experiments range, the degree of orientation of the 0.94BNT-0.06BT ceramics prepared by the RTGG method was texture fraction${\approx}92%$ and the piezoelectric constant($d_{33}$) and coupling factor($k_{p}$) was obtained to $d_{33}{\approx}205{\;}pC/N$, $k_{p}{\approx}0.33%$, respectively.

Electrical properties of La-doped BaTiO3 synthesized by homogeneous precipitation (균일침전법으로 제조된 란탄이 혼입된 $BaTiO_3$의 전기적 특성)

  • Huh, Woo-Young;Ryu, Kyoung-Youl;Kim, Seung-Won;Lee, Chul
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.5
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    • pp.498-503
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    • 1999
  • La-doped $BaTiO_3$ ceramics were prepared from BaTiO(C_2O_4)_2\;{\cdot}\;XH_2O(BTO)$, which was synthesized by homogeneous precipitation using dimethyl oxalate. The electrical properties of La-doped $BaTiO_3$ were investigated with variation of La-contents and particle size. It was found that a large PTCR (positive temperature coefficient of resistivity) effect was appeared in the conditions at the 0.6 mol% of La-content and at small particle size of BTO as 1.0$\mu\textrm{m}$. The plot of temperature vs. 1/$\varepsilon_m$(T) above Curie temperature $(T_c)$ was agreed with Curie-Weiss law. The potential barrier calculated from measured resistance and capacitance of specimen, also gave higher value at small particle size of BTO as 1.0 $\mu\textrm{m}$ and at La-content of 0.6 mol%.

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Dielectric Properties of $(Ba,Sr,Ca)TiO_{3}$ Ceramics with Additon of Dopant (불순물 첨가에 따른 $(Ba,Sr,Ca)TiO_{3}$ 세라믹의 유전특성)

  • Lee, Sung-Gap;Lee, Young-Hie;Lim, Sung-Soo;Park, In-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.42-45
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    • 2001
  • $(Ba_{0.6}Sr_{0.4}Ca_{x})TiO_{3}+yZrO_{2}$ wt% (x=0.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed-oxide method and then the structural and dielectric properties as a function of the composition ratio and $ZrO_2$ contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and $ZrO_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of $ZrO_2$.

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Dielectric Properties of (Ba,Sr,Ca)$TiO_3$ Ceramics with Addition of Dopant (불순물 첨가에 따른 (Ba,Sr,Ca)$TiO_3$ 세라믹의 유전특성)

  • 이성갑;이영희;임성수;박인길
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.42-45
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    • 2001
  • (Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$+yZrO$_2$wt% (x=1.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed and ZrO$_2$ contents were studied. All BSCT specimens contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and ZrO$_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of ZrO$_2$./TEX>.

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