• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.99.1-99.1
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• 2004

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.32.2-32.2
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• 2004

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.29.2-29.2
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.48.2-48
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.56-56
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.46-46
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.374-378
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• 1999

Thin Films of BaYTiO system were Prepared by frequency (rf)/dc magnetron sputtering method. The preparation of target were accomplished by the mixed oxide method, and their composition consisted of the $Ba_{0.997}$ $Y_{0.003}$Ti $O_3$+0.5 $SiO_2$+x $M_{n}$O(x=0, 0.073, 0.1, 0.127, 0.154). The average particle size of (Ba,Y)Ti $O_2$ system ceramics with Mn $O_2$ additives increases as the amount of MnO additives increase and reaches the maximum grain growth when the amount of MnO is 0.127(mol%).).).).

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.684-689
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• 2019

Single crystals, which have complexed composition, are fabricated by solid state grain growth. However, it is hard to achieve stable properties in a single crystal due to trapped pores. Aerosol deposition (AD) is suitable for fabrication of single crystals with stable properties because this process can make a high density coating layer. Because of their unique features (nano sized grains, stress inner site), it is hard to fabricate single crystals, and so studies of grain growth behavior of AD film are essential. In this study, a $BaTiO_3$ coating layer with ${\sim}9{\mu}m$ thickness is fabricated using an aerosol deposition method on (100) and (110) cut $SrTiO_3$ single crystal substrates, which are adopted as seeds for grain growth. Each specimen is heat-treated at various conditions (900, 1,100, and $1,300^{\circ}C$ for 5 h). $BaTiO_3$ layer shows different growth behavior and X-ray diffraction depending on cutting direction of $SrTiO_3$ seed. Rectangular pillars at $SrTiO_3$ (100) and laminating thin plates at $SrTiO_3$ (110), respectively, are observed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.56-62
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• 1999

In this study, (Ba, Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as rf power, dc bias voltage, and chamber pressure. The etch rate was 56 nm/min under $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2, rf power of 600 W, dc bias voltage of 250 V, and chamber pressure of 5 mTorr. At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba, Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). Ba is removed by chemical reaction between Sr and Cl to remove Sr. Ti is removed by chemical reaction such as $TiCl_4$ with ease. The results of secondary ion mass spectrometer (SIMS) analysis compared with the results of XPS analysis and the results were the same.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.308-313
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• 2005

In this study the electrical conductivity of excess BaO in $BaTiO_3$ was measured to investigate the relationship between defects and solubility in the temperature range of $900^{\circ}C$ to $1300^{\circ}C$ under various oxygen partial pressure. First of all, quenched $BaTiO_3$ powders of various Ba/Ti ratios were analysed by X-ray diffraction to confirm whether second phase is formed or not. As the results, we observed the solubility of BaO in the temperature range of $1200^{\circ}C$ to $1400^{\circ}C$, and it was also found that the conductivity minima move to lower $PO_2$ with increasing excess BaO within solubility limit.