• Title/Summary/Keyword: $BaTiO_{3}$

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Properties of Li doped BST-MgO thick film Interdigital Capacitor (Li이 첨가된 BST-MgO Interdigital 커패시터의 특성연구)

  • Kim, Se-Ho;Han, Yong-Su;Koh, Jung-Hyuk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.286-286
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    • 2007
  • Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO 후막 interdigital 커패시터를 연구하였다. Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO의 후막을 $Al_2O_3$ 기판 위에 형성하기 위하여 스크린 프린팅 방법을 이용하였다. $BaSrTiO_3$의 세라믹 물질은 높은 유전율(1MHz에서 500이상)과 낮은 유전 손실(1MHz에서 0.01)값을 가지고 있는 반면, $1350^{\circ}C$의 높은 온도에서 소결되는 단점이 있다. 따라서 본 연구에서는 $BaSrTiO_3$ 세라믹 물질의 유전특성을 향상시키고 $1350^{\circ}C$의 높은 소결온도를 낮추기 위해서, MgO(30wt%)와 Li(3wt%)을 $BaSrTiO_3$에 첨가하였다. 그리고 10um의 후막을 $Al_2O_3$ 기판 위에 스크린 프린팅 방법을 통해 형성한 후, 50um finger gap의 interdigital 커패시터를 Ag 전극을 이용하여 제작하였다. 샘플을 제작하기 전에, Frequency와 유전율의 상관관계를 알아보기 위해 3D simulator를 통해 시뮬레이션 하였고, 주파수와 온도별 유전 특성, 구조와 전암-전류에 대한 특성을 본 연구의 결과를 통해 토의 할 것이다.

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Development of PTCR compositions for automobile (자동차용 PTC써미스터 조성개발에 관한 연구)

  • 김복희;문지원;전형탁;최연규;손명성;김기주
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.1
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    • pp.151-159
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    • 1998
  • Elelctrical properties of $BaTiO_3$ were characterized with addition of $Y_2O_3, CaO,SiO_2$ and Mn to develope the composition of PTC thermistor suitable as a current limiting device for automobile motor system. With the addition of 0.2 mol% $Y_{2}O_3$ to $BaTiO_3$, the minimum resistance of 16.5 ${\Omega}{\cdot}$cm was obtained at room temperature. $(Ba_{0.996}Y_{0.004})TiO_3$ exibited a minimum resistance of 50${\Omega}{\cdot}$cm with addition of 1.6 mol% $SiO_2$. The grain size of $(Ba_{0.996}Y_{0.004})TiO_3$ decreased from 34.95 ${\mu}$m to 13.4 ${\mu}$m and thus breakdown voltage could be improved by changing the composition as $(Ba_{0.996}Y_{0.004}Ca_{0.05}) TiO_3$ with substition of 5 mol% Ca into Basites. When 0.04 mol% Mn was added, the optimum PTCR properties could be obtained : the resistivity at room temperature and ${\rho}_{max}/{\rho}_{min}$ were 30~40${\Omega}{\cdot}$cm and $1.5{\times}10^5$ respectively.

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(Ba1-xCax)(Ti1-yZry)O3 Powder Synthesis Via Hydrothermal Treatment

  • Park, Byung-Hyun;Choi, Kyoon;Choi, Eui-Seok;Kim, Jong-Hee
    • Journal of the Korean Ceramic Society
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    • v.39 no.11
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    • pp.1017-1022
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    • 2002
  • $(Ba_{1-x}Ca_x)(Ti_{1-y}Zr_y)O_3(BCTZ)$ powders for the Ni-electrode Multilayer Ceramic Capacitor(MLCC) were synthesized via hydrothermal treatment using mixed aqueous solutions of $BaCl_2{\cdot}2H_2O,\Ca(NO_3)2{\cdot}4H_2O,\ ZrOCl_2{\cdot}8H_2O$ and $TiCl_4$. Two component and three component systems were also extensively studied for basic data. BT, CT and BZ powders were crystalline but CZ was determined to be amorphous under the same synthetic condition. In BTZ system, Zr and Ti were completely soluble and Ca would be substituted for Ba up to ∼6 mol% in BCT. The submicron-sized $(Ba_{0.95}Ca_{0.05})(Ti_{0.80}Zr_{0.20})O_3$ powder of the target composition was successfully synthesized at $150{\circ}$ for 12h.

Feasibility Test for Mechanical Property Characterization of BaTiO3 Ceramics for MLCC Application Using Nanoindentation (나노인덴테이션을 이용한 MLCC용 BaTiO3 세라믹스의 기계적 물성평가)

  • Ryu, Sung-Soo;Kim, Seong-Won;Kim, Hyeong-Jun;Kim, Hyung-Tae
    • Journal of Powder Materials
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    • v.16 no.1
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    • pp.37-42
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    • 2009
  • In this study, the feasible test for the mechanical property characterization of $BaTiO_3$ ceramics and multi-layer ceramic capacitor(MLCC) was performed with nanoindentation technique. In case of $BaTiO_3$ ceramics, hardness and elastic modulus are dependent on the densification of specimen showing the highest hardness and elastic modulus values of 12.3 GPa and 155 GPa, respectively at $1260^{\circ}C$. In case of MLCC chip, hardness of dielectric layer was lower than that of margin region. The nanoindentation method could be useful tool for the measurement of mechanical property within $BaTiO_3$ dielectric layer of very thin thickness in high capacitance MLCC.

A Study on Powder Electroluminescent Device through Structure and Thickness Variation (구조 및 두께 변화에 따른 후막 전계발광 소자에 관한 연구)

  • Han, Sang-Mu;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1379-1381
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    • 1998
  • Powder electroluminescent device (PELD) structured conventionally dielectric and phosphor layer, between electrode and their layer fabricated by screen printing splaying or spin coating method. To promote performance of PELDs, we approached the experiments for different structure and thickness variation of PELD. Thickness variation($30{\mu}m{\sim}130{\mu}m$) was taken. To investigate electrical and optical properties of PELDs, EL spectrum, transferred charge density using Sawyer-Tower's circuit brightness was measured. Variation of structure in PELDs was as follows: WK-1 (ITO/BaTiO3/ZnS:Cu/Silver paste), WK-2 (ITO/BaTiO3/ZnS:Cu/BaTiO3/ZnS:Silver paste), WK-3 (ITO/BaTiO3/ZnS:Cu/BaTiO3/Silver paste), WK-4(ITO/BaTiO3+ZnS:Cu/Silver paste) As a result, structure of the highest brightness appeared WK-4 possessed 60 ${\mu}m$ thickness. The brightness was 2719 cd/$m^2$ at 100V, 400Hz.

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Dielectric and Piezoelectric Properties of "Lead-free" Piezoelectric Rhombohedral Ba(Ti0.92Zr0.08)O3 Single Crystals

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.53 no.2
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    • pp.171-177
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    • 2016
  • Rhombohedral $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.85, piezoelectric charge constant ($d_{33}$) of about 950 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 40 [${\times}10^{-3}Vm/N$]. Especially the $d_{33}$ of (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals was by about six times higher than that of their ceramics. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($d_{33}$, $g_{33}$) are higher than those of soft PZT ceramics, it is expected that rhombohedral (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications such as actuator, sensor, and transducer.

$BaTiO_3-(Bi_{1/2}Na_{1/2})TiO_3$ system for PTC Thermistor (PTC 써미스터를 위한 $BaTiO_3-(Bi_{1/2}Na_{1/2})TiO_3$)

  • Park, Yong-Jun;Lee, Young-Jin;Paik, Jong-Hoo;Kim, Dae-Joon;Lee, Woo-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.91-92
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    • 2007
  • An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

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A Study on Structural and Dielectric Properties of the (Ba, Sr)$TiO_3$ Targets for Laser Ablation (Laser Ablation용 (Ba,Sr)$TiO_3$ 타겟의 구조 및 유전특성에 관한 연구)

  • 홍상기;김성구;마석범;장낙원;최형욱;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.37-40
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    • 1998
  • (Ba.Sr)TiO$_3$(BST) ceramics were fabricated with different Ba/Sr ratios and the str dielectric properties of the BST bulk ceramics were investigated. As the Ba/sr ratios dielectric constant decreased. (Ba$_{0.7}$Sr$_{0.3}$)TiO$_3$ (BST(70/30)) showed a maximum dielec value of $\varepsilon$$_{r}$=8.856, this showed that the decrease of Ba/Sr ratios had made BST thin dielectrics. Targets were fabricated and made into film by PLD process and the thin film by PLD process have good stoichiometry with the targets.rgets.

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