• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.315-316
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• 2007

최근 전자제품의 경박단소화와 고성능화에 대한 관심이 증가하면서 내장형 수동소자 (Embedded Passive Device)에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 Ni-coated $BaTiO_3$와 PMMA의 함량 변화에 따른 복합체의 유전적 특성을 연구하였다. Ni-coated $BaTiO_3$첨가량을 0~50%까지 증가시키며 유전율을 측정하였으며, 코팅되지 않은 $BaTiO_3$-PMMA복합체의 유전율과 결과를 비교하였다. 본 연구결과 Ni 코팅에 의한 유전율 증가를 관찰할 수 있었으며, 코팅 상태는 코팅공정시의 시간과 온도 등에 의존한다는 것을 확인하였다. 본 논문에서는 이러한 실험결과를 개선된 혼합법칙을 바탕으로 해석하고자 한다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.5
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.864-870
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• 1998

The effect of {{{{ {{Nb }_{2 }O }_{5 } }} and CoO addition on the temperature dependence of the {{{{ {BaTiO }_{3 } }}-based ceramic capa-citor has been studied. X7R with moderate temperature dependence has been developed by means of pre-cisely controlled {{{{ {{Nb }_{2 }O }_{5 } }}/CoO ratio. Dielectric constant(K) and dissipation factor(DF) were 3500 and 1.5% respectively. As the content of {{{{ {{Nb }_{2 }O }_{5 } }} was increased the curie temperature(Tc) was shifted to lower tem-perature and the dielectric constant at Tc was decreased. The proper addition of CoO with {{{{ {{Nb }_{2 }O }_{5 } }} improved the temperature dependence of dielectric properties of the {{{{ {BaTiO }_{3 } }}-based ceramic capacitor.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1311-1318
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• 1996

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1274-1279
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• 1998

The glass forming ability of the PbO-B2O3-TiO3-BaO system was investigated in relation to transitieon tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-perature differences between liquidus temperature and crystallization(or glass transition) temperature de-creased and the temperature difference between crystallization and glass transition temperature increases. The atomic ratio could be used as a criterion to deign glass systems. The interposition of B and Ba atoms between Pb and Ti atoms was one of important factors in glass formation.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.28-31
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• 2000

BaTiO$_3$cerameic thin films doped with Mn were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PRCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperature. Second heat treatment of the specimen were performed in the temperature range of 400 to 1350$\^{C}$ X-ray diffraction patterns of BaTiO$_3$ thin films show that the specimen heat treated below 600$\^{C}$ is an amorphous phase and the one heat treated above 1100$\^{C}$ forms a poly-crystallization . In this specimen heat-treated at 1300$\^{C}$, a lattice constant ratio(c/a) was 1.188. Scanning electron microscope(SEM) image of BaTiO$_3$ thin films of the specimen heat treated in between 900 and 1100$\^{C}$ shows a grain growth. At 1100$\^{C}$, the specimen stops grain-growing and becomes a poly-crystallization . A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn. A resistivity ratio between the value at room temperature and the one above Curie temperature was 10$^4$ for pure BaTiO$_3$ thin films and 10$\^$5/ fo BaTiO$_3$ : additive 0.127mol% MnO

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.205-209
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• 2009

In this study, in order to develop the composition ceramics for lead-free ultrasonic motor, (1-x-0.09)$NaNbO_{3-x}BaTiO_3-0,09LiNbO_3$ ceramics were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $BaTiO_3$ substitution. All the specimens showed orthorhombic phase structure without secondary phase, $BaTiO_3$ substitution enhanced density, dielectric constant(${\epsilon}_r$) and electromechanical coupling factor($k_p$), However, mechanical quality factor was deteriorated. Curie temperature of specimens was observed as about $380^{\circ}C$. At the $BaTiO_3$ substitution of 4 mol%, density, electromechanical coupling factor($k_p$), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of specimen showed the optimum value of $4.493g/cm^3$, 0.236, 175, 70 pC/N, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.44-48
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• 1996

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified BaTiO$_3$systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between 13$25^{\circ}C$ and 1375$^{\circ}C$. The room temperature resistivity, PTCR effect and ac complex impedence characteristics were studied. It shows that the room temperature resistivity was increased with the increasing Ti/Ba mole ratio and sintering temperature. It was suggested that this result was mainly attributed to its grain-boundary properties

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.421-426
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• 2006

[ $(BaSr)TiO_3$ ] thick films were prepared by tape casting method, using $BaTiO_3\;and\;SrTiO_3$ powder slurry in order to investigate dielectric properties i.e. dielectric constant, ${\varepsilon}_r$, Curie temperature, $T_c$. Grain growth within $(BaSr)TiO_3$ thick films was observed with increasing weight ratio of $BaTiO_3$. This observation can be explained by phenomena of substitution of $Sr^{2+}$ ion for $Bi^{2+}$ ion in the $BaTiO_3$ system. Also, the Curie temperature in $(BaSr)TiO_3$ thick films was shifted to lower temperature range with increasing $ SrTiO_3$. Furthermore, Curie temperature having maximum dielectric constant was in the range of $-40^{\circ}C\;to\;30^{\circ}C$, and hence sharper phase transformation occurred at Curie temperature. There occurred decrease in tunability and k-factor of $(Ba_{0.6}Sr_{0.4})TiO_3$ calculated from the dielectric constant, ${\varepsilon}_r$ above Curie temperature. In addition, above the $60^{\circ}C$, phase fixation was observed. This means that internal stress relief occurred with increasing $90^{\circ}$ domains.