• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2005.09a
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• pp.201-212
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• 2005

[ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

• Journal of environmental and Sanitary engineering
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• v.11 no.1
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• pp.63-70
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• 1996

The synthesis of high purity and ultra-fine $BaTiO_3$ by precipitation with gaseous $NH_3$ as precipitator was investigated to find an alternative process to solve various problems of recent wet methods. A synthesis process for $BaTiO_3$ powder using $NH_3$ gas as a precipitator in a bubble column reactor was experimentally successful in developing the production process of piezoelectric ceramic $BaTiO_3$ powder. And a 2.33m1/sec is approprite for the feed flow rate, $BaTiO_3$ powder produced under above the condition is spherical type, its particle size was about $0.2{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.843-849
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• 1989

Effect of Bi2O3/Li2CO3 on low temperature sinteirng and dielectric property of BaTiO3 ceramics has been investigated. For the specimen sintered at 110$0^{\circ}C$, it was densified to 96% of BaTiO3 theoretical density by the addition of 1.0-1.25w/o Bi2O3/Li2CO3. Maximum dielectric constant increased and Curie temperature lowered with the increase of Bi2O3/Li2CO3 content, which probably can be explained by thne substitution of Bi3+, Li1+ on BaTiO3 lattice. The volatilization of Li1+, resulting from the increase of soaking time at 110$0^{\circ}C$ leads to the increase of Curie temperature and tetragonality of the specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.217-217
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• 2008

$BaTiO_3$는 perovskite 구조를 가지는 대표적인 강유전체 재료로서 MLCC (Multi Layer Ceramic Capacitor), PTC thermistor 등에 널리 사용되어지고 있으며, 그 특성을 향상시키기 위하여 많은 연구가 진행되고 있다. 현제 $BaTiO_3$ 분말 제조의 대표적인 합성법으로는 하소와 분쇄공정이 없는 수열합성법이 대표적이나, 나노 사이즈로 제작시 $BaTiO_3$는 마이크로 크기와 달리 입방정상으로 우세한 상태로 존재한다. 이는 제조과정 중의 hydroxyl defect의 영향과 나노 분말의 표면에너지 증가 때문이라고 보고된다. 따라서 본 연구는 이러한 문제점을 해결하기 위해 일반적인 세라믹 제조 방법인 고상반응법을 이용한 나노 사이즈의 $BaTiO_3$ 제조를 위한 최적의 공정 조건을 확립하기 위하여 본 연구를 진행하였다. 조성은 $BaTiO_3$와 반응온도를 낮추기 위한 anatase의 $TiO_2$를 사용하였고, $BaCO_3/TiO_2$ 의 조성비 (1. 1.01, 1.02, 1.03)를 제어하여 혼합한 후, 24h ball-mill 하여 하소 온도 ($860^{\circ}C{\sim}1000^{\circ}C$) 변화에 따른 입자 사이즈와 입도 분포를 측정하였다. 제조된 $BaTiO_3$분말의 결정 구조 분석을 위하여 XRD (X-ray diffraction) 분석을 수행 하였는데, 분석 결과로부터 제조된 분말들이 정방정 (tetragonal)의 perovskite구조를 갖고 있음을 확인하였다. 또한 분말의 미세구조 확인을 위하여 SEM (scanning electron microscope) 관찰을 수행하였는데, 나노 사이즈의 구형 분말을 얻을 수 있음을 확인할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.795-803
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• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.180-182
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• 2004

Polycrystalline $BaTiO_3/SrTiO_3$ powder was prepared by sol-gel process and the multilayered thick films were prepared on the $Al_2O_3$ substrates by screen printing method. The films were sintered at $1400^{\circ}C$ for 2 hours in the air. The structural and dielectric properties were investigated, The X-ray diffraction (XRD) patterns indicate that the BST phase and porocity were formed in the interface of $BaTiO_3/SrTiO_3$ multilayered thick films. The dielectric constant and the dielectric loss of the BT/ST/BT/ST multilayered thick films were about 247 and 0.84% at 1MHz.

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.691-697
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• 1989

Fine TiO2 and BaTiO3 powders having spherical particles were synthesized by ultrasonic spray pyrolysis of alcoholic solution of metal alkoxide in an electric furnace heated at 400-90$0^{\circ}C$. Microstructure and composition of particles synthesized were observed by TEM and XRD respectively. Spectific surface area of powders synthesized was examined through BET specific surface area measurement. TEM observation revealed that the particle size did not change irrespective of pyrolysis temperature but decreased according to the increase of concentration and spherical particle was consisted of primary particles of about 0.02${\mu}{\textrm}{m}$. As for BaTiO3 powder, the ratio of Ti/Ba was 0.987 by EDX analysis.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.323-326
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• 1984

In this study we are going to develop the process of a synthesis about BaTiO3 at the room temperature. We use BaTiO3 as a high dielectric constant in many dielectric materials and more stable in the temperature, We need high temperature over 1300$^{\circ}C$ for the synthesis of BaTiO3 by the process of industrials and there are difficulty which synthesize a final products not to have a intermediate composition. So we studied to synthesize a pure BaTiO3 from the room temperature to 90$^{\circ}C$ and also to develop the process of synthesis which can control the particle size and which has the final product not to have a intermediate composition.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.51-56
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• 1995

Variation of sintered density of BaTiO3 powder calcined at 120$0^{\circ}C$ and 135$0^{\circ}C$ was investigated with respect to the grain growth behavior. It was found that BaTiO3 powder, which was calcined at 120$0^{\circ}C$, showed abnormal grain growth behavior during sintering process. At initial stage of sintering process, the densification rate of specimen was accelerated with rapid grain growth caused by the abnormal grain growth. But with the increase of sintering time, abnormally grown grain met each other and the density of specimen decreased drastically due to coalescence of pores located in triple junction. On the contrary, BaTiO3 powder calcined at 135$0^{\circ}C$ showed normal grain growth behavior and gradually densified with the increase of sintering time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.193-197
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• 1996

BaTiO$_3$films in pure Ar atmosphere were prepared by RF sputtering method at low substrate temperature(100$^{\circ}C$). The structural and crystallographic properties were studied with deposition conditions and annealing methodes. Deposition rates and structural properties of BaTiO$_3$ thin filles were investigated by the SEM and X-ray diffraction. The chemical composition of BaTiO$_3$ thin films grown on Si(100) wafer was studied by tole EDS and EPHA. The optimised Ar pressure and RF power were 8[mtorr] and 180[W], respectively. The thickness of BaTiO$_3$ thin films deposited at optimised conditions was ∼3400[${\AA}$], and the dielectric constant of the thin films heat-treated at 750[$^{\circ}C$] for 1[hr] was 259.