• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.724-727
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• 2009

We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.189-190
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.50-50
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• 1996

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1488-1490
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• 2002

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.245-250
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• 2001

BaO-TiO$_2$계의 TiO$_2$-rich 조성영역에 대한 상평형 관계를 완전 고상 반응법을 통하여 재평가하였다. 출발 시료로는 이 계의 end-member인 BaO와 TiO$_2$(rutile)를 이용하였다. 각 시료들은 대기 중에서 800~120$0^{\circ}C$의 온도구간에서 선택적으로 열처리되었다. 열처리된 시편들은 상온까지 급냉 처리되었으며, 상 분석은 X-ray 회절 분석을 통하여 이루어졌다. 연구결과에서 BaTi$_2$O$_{5}$(1:2)상과 BaTi$_{5}$O$_{11}$(1:5)상이 저온에서의 고상 반응을 통해서도 쉽게 형성될 수 있음을 알 수 있었으며, 각 저온 상들의 불변 반응 온도를 열처리 온도에 따른 상 분석을 통하여 확인할 수 있었다.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.95-99
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• 2011

$(1-x)BaTiO_3+(x)Cd_5(PO_4)_3Cl$ ceramics were prepared by the conventional ceramic technique, i.e., solid state reaction at high temperature. The concentration of $Cd_5(PO_4)_3C$ was varied from 0.01 to 0.15 mole fraction. In order to study the phase transitions of our ceramics, the Raman scattering spectra were measured as functions of concentration x and temperature. It was found that the soluble limit of $Cd_5(PO_4)_3Cl$ in $BaTiO_3$ was the x=0.05 composition and $BaTiO_3$ phase disappeared above x=0.10. A new phase identified as $Ba_4Ti_3P_2O_{15}$ was detected in all samples of our compositions. The Curie temperature shifts up to $130^{\circ}C$ as the concentration x increases from zero to 0.05 and shift down to $95^{\circ}C$ as further increases to 0.08. For the increase of the Curie temperature, it is suggested that it can result from the inhibition of displacement of $Ti^{4+}$ in the distorted octahedron due to well dispersed $Ba_4Ti_3P_2O_{15}$ and $Cd_5(PO_4)_3Cl$ phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.136-142
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• 2022

The crystal structure, grain growth behavior, and dielectric properties of BaTiO₃ have been studied with the addition of Dy₂O₃. The powders were synthesized at ratios of (100-x)BaTiO₃-xDy₂O₃ (mol%, x = 0, 0.5, 1.0, 2.0) by a conventional solid-state synthesis, and the powder compacts were sintered at 1250℃ for 2 hours in air. As the amount of added Dy₂O₃ was increased, the crystal structure of the sintered samples changed from a tetragonal to a pseudo-cubic structure, and the tetragonality decreased. In addition, a secondary phase of Ba₁₂Dy_4.67Ti₈O₃₅ appeared when Dy₂O₃ was added. The average grain size after sintering decreased and abnormal grains appeared as the amount of Dy₂O₃ increased. It can be explained that the grain growth behavior of the Dy₂O₃ added-BaTiO₃ occurs due to the two-dimensional nucleation and growth, and is governed by the interface reaction. Further, the correlation between crystal structure, microstructure, and dielectric properties was discussed.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.475-481
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• 2008

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)$BaTiO_3-x(Bi_{0.5}K_{0.5})TiO_3$ ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free PTC thermistor available at high temperatures of > $120^{\circ}C$. The PTCR characteristics appearing in the ($B_{i0.5}K_{i0.5})TiO_3$ (< 5 mol%) incorporated $BaTiO_3$ ceramics, which might be mainly due to $Bi^{+3}$ ions substituting for $Ba^{+2}$ sites. The 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics showed good PTCR characteristics of a low resistivity at room temperature (${\rho}_r$) of $31{\Omega}{\cdot}cm$ a high ${\rho}_{max}/{\rho}_{min}$ ratio of $5.38{\times}10^3$, and a high resistivity temperature factor (${\alpha}$) of $17.8%/^{\circ}C$. The addition of $Nb_2O_5$ to 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics further improved the PTCR characteristics. Especially, 0.025 mol% $Nb_2O_5$ doped 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics exhibited a significantly increased ${\rho}_{max}/{\rho}_{min}$ ratio of $8.7{\times}10^3$ and a high ${\alpha}$ of $18.6%/^{\circ}C$, along with a high $T_c$ of $148^{\circ}C$ despite a slightly increased ${\rho}_r$ of $31{\Omega}{\cdot}cm$.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.