• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.91-95
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• 2020

In this study, we report a hydrothermal synthesis in which BaTiO₃ nanoparticles (NPs) with enhanced size uniformity and dispersibility are synthesized by increased time and temperature, increasing nucleation and diffusion rates. The formation process of an uniform size of 20 nm BaTiO₃ NPs, which has not been extensively researched, was optimized through hydrothermal synthesis at 180℃. Simultaneous increase in the nucleation rate of TiO₂ and diffusion length of Ba²⁺ ions, resulting from a higher temperature, allowed for the synthesis of BaTiO₃ NPs (20 nm) with significantly enhanced size-uniformity. The size and crystallinity of BaTiO₃ NPs which exhibit excellent dispersibility in hexane solvent were investigated using transmission electron microscopy and X-ray diffraction. The results presented herein provide insights into improving the size uniformity and dispersibility of BaTiO₃ NPs by hydrothermal synthesis for applications to variety of electronic devices.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.665-670
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• 1998

Ferroelectric anomaly in PbO-{{{{ { {B }_{2 }O }_{3 } }}-{{{{ {TiO }_{3 } }}-BaO glasses which is observed in DAT measurements was in-vestigated together with the effect of BaO content on the shift of Cuire temperature. The temperature where the ferroelectric anomaly apperars on cooling in DTA decreased in proportion with increasing BaO content,. For as-crystallized samples the ferroelectric anomaly was not observed on heating but on cooling whilist for powder samples leached chemically from the crystallized samples both endothermic and ex-otehrmic peaks were observed. This fact suggests that the appearance of the ferroelectric anomaly in DAT largely depends on glassy phases surrounding individual {{{{ {PbTiO }_{3 } }} crystals rather than effects of grain size and crystallinity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.68-69
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• 2005

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.426-429
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• 2001

The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.426-429
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• 2001

The BaTiO$_3$+xNb$_2$O$_{5}$[x=6,8 , 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the BaTiO$_3$+xNb$_2$O$_{5}$ ceramics with the sintering temperature and addition of Nb$_2$O$_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the 2$\theta$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of Nb$_2$O$_{5}$, the intensity of BN (100) Peak was decreased and BN (310), (110) peaks were increased. The grain size of the BaTiO$_3$+Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$ were almost uniform. In the BaTiO$_3$+Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.espectively.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1129-1132
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• 1995

In the preparation of the layered $BaTiO_3$ thin films with high performance, the new stacking method using the continuous cooling of the substrate was introduced. Amorphous/polycrystalline $BaTiO_3$ layered structure was confirmed by SEM and index of refraction. The layered $BaTiO_3$ thin films formed by the new stacking method showed such a high dielectric constant that the layered structure could not be explained by a stacking structure of the two defined layers but could only be explained by multi-layered structure, i.e. amorphous/micro crystalline/polycrystalline structure. The layered $BaTiO_3$ thin film with a thickness of 240 nm showed higher capacitance per unit area and breakdown strength than the double layered $BaTiO_3$ thin film prepared by the conventional stacking method. And well defined ferroelectric hysteresis leer was observed in the layered $BaTiO_3$ thin film with a thickness of 200 nm.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.143-147
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• 2017

Structural studies on the addition characteristics of Nb ions to $BaTiO_3$ solid solutions were performed by XRD and SEM/EDS technique. The X-ray diffraction peaks of the (111), (200) and (002) planes of Nb-doped $BaTiO_3$ solid solutions with different mole% of Nb were analyzed. We also investigated the relationship between the dielectric and structural properties of Nb-doped $BaTiO_3$. The transition temperatures of $BaTiO_3$ solid solution doped with 0.5mole%Nb and 1.0 mole%Nb were ${\sim}116^{\circ}C$ and ${\sim}87^{\circ}C$, respectively, which were found to be shifted to very low temperature from the transition temperature of pure $BaTiO_3$ (about $125^{\circ}C$). As a result of analysis of 1/K versus T and ln[$(1/K)-(1/K_m)$ versus ($T-T_m$)] of the two compositions used in this experiment, the diffusivity slightly differs from that of pure $BaTiO_3$ at temperatures above Curie temperature. And this characteristic was analyzed by applying the modified Curie-Weiss law.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.142-147
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• 2002

폴리머/세라믹 복합체는 내장형 캐패시터(embedded capacitor)의 유전 재료로 많은 관심을 불러 일으키고 있다. 본 연구는 BaTiO$_3$분말의 크기와 함량이 에폭시/BaTiO$_3$복합체 캐패시터의 유전 상수와 누설전류에 미치는 영향에 대해 살펴보고 이에 대해 고찰하고자 하였다. BaTiO$_3$분말이 67vo1% 함유된 Epoxy/BaTiO$_3$composite 필름의 유전상수는 전반적으로 사용한 BaTiO$_3$분말의 크기가 커짐에 따라 증가하였다. 이것은 입자의 크기가 증가함에 따른 입자의 유전상수의 증가 때문이며 XRD 분석을 통해 입자의 크기가 증가함에 따라 tetragonality가 증가함을 확인하였다. 복합체 필름의 누설전류도 또한 사용한 입자의 크기가 커짐에 따라 증가하였으며 이는 분말의 크기가 증가함에 따라 단위길이 당 입자의 수가 감소하는 것으로, 단위 길이 당 입자의 수가 감소하여 전류의 흐름을 방해하는 입자/폴리머/입자 계면의 수가 감소하기 때문이다. 분말의 함량에 따른 유전상수는 unimodal과 bimodal의 경우 각각 73vo1%와 80vo1%에서 최대 값을 나타냈으며 그 이상에서는 감소하는 것이 관찰되었는데 이는 과량의 분말이 조밀 충전을 깨고 필름의 밀도를 낮추기 때문이었다. 누설전류의 경우 unimodal과 bimodal 각각에 대해 73vo1%와 80vo1%에서 급격한 증가를 관찰 할 수 있었으며 이는 percolation 현상의 발생에 의해 입자와 입자간에 접촉이 이루어져 BaTiO$_3$분말을 따라 전류가 잘 흐를 수 있는 conduction path가 형성 되기 때문이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.454-457
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• 2010

The influence of CuO addition on what of the $(Ba,Sr)TiO_3$ ceramics was studied. The sintering temperature of $(Ba,Sr)TiO_3$ ceramics was lowered by the addition of CuO additives. The 1 - 5 wt% CuO were selected and employed as the sintering aids. Low-Temperature Co-fired Ceramic technologies are popular technologies used in the manufacture of microwave devices. In this study, crystalline and electrical properties of CuO doped $(Ba,Sr)TiO_3$ ceramics were investigated to determine the low temperature sintering properties. The addition of CuO to $(Ba,Sr)TiO_3$ lowered the sintering temperature from $1350^{\circ}C$ to $1150^{\circ}C$. The dependence of the sintering temperature shrinkage rate and mechanism of CuO doped $(Ba,Sr)TiO_3$ ceramics are investigated and discussed. Also, the crystalline structure of CuO - doped $(Ba,Sr)TiO_3$ ceramics is discussed by the X-ray diffraction (XRD) method.

• Journal of the Microelectronics and Packaging Society
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• v.3 no.1
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• pp.25-32
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• 1996

본 연구에서는 BaTiO3에 Sr과 Pb를 치환시켜TiO3 조성의 세라믹 유전체를 제조한 후 페로브스카이트형 Ba(Cu, Mo)O3를 저융점 flux 로 첨가하여 120$0^{\circ}C$ 이하의 여러온도에 서 소결을 행하였으며 flux 첨가량의 변화에 따른 소결거동 및 유전 특성의변화를 조사하였 다. 이러한 저온 소결용 유전체 세라믹스가 MLCC의 응용시 Pt-Pd계의합금을 내부전극으로 사용가능성을 검토하였다. Flux를 4mol%첨가한 TiO3-0.04Ba(Cu,Mo)O3 조성의 유전체는 120$0^{\circ}C$의 온도에서 2시간 소결했을 경우 소결밀도는 이론밀도의 95% 에 근접하였으며 이때 의 비유전율은 8000이상을 나타내었다. 이러한 소결 온도의 감소는 저융점인 ba(Cu,Mo)O3 계의 flux가 첨가되면서 비교적 낮은 온도에서 액상을 형성하여 소결을 촉진시켰기 때문으 로 사료된다.