• Title/Summary/Keyword: $BaTiO_{3}$

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Dielectric and Structural of BST Thin Films with Ce-doped prepared by Sol-gel method for Phase shifters (Phase shifters 응용을 위한 Sol-gel 법으로 제작된 BST 박막의 Ce 첨가에 따른 구조적, 유전적 특성)

  • Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.776-779
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    • 2004
  • The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

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Variation of Dielectric Constant with Various Particle Size and Packing Density on Inkjet Printed Hybrid $BaTiO_3$ Films

  • Lim, Jong-Woo;Kim, Ji-Hoon;Yoon, Young-Joon;Yoon, Ho-Gyu;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.271-271
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    • 2010
  • $BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.

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The Influence of MnO doped on the Radiation Properties of Far-Infrared in Semiconduction PTC Thermistor. (반도성 PTC 서미스터의 원적외선 방사특성에 미치는 MnO의 영향)

  • Song, M.J.;Cho, H.S.;Jang, S.H.;Park, C.B.;Kim, C.H.;Lee, J.U.
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.204-208
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    • 1991
  • In this paper, the radiation properties of a far-Infrared using a PTC thermistor, the $BaTiO_3$+1.63mol% $Al_2O_3$+3.75mol% $SiO_2$+1.25mol% $TiO_2$(1/3 $Al_2O_3+xSiO_2$+(1-x) $TiO_2$; total x: 6.67mol%) ceramics, in order to progress the grade resistivity characteristics, by adding an ethanol solution of $Mn(NO_3){\cdot}6H_2O$ was investigated. The ceramics was fabricated by wet-mill method. The sintering temperature read 1300-1350$[^{\circ}C]$ and the holding time was 3 hours. The quantity of $Sb_2O_3$ and $Al_2O_3$ for an activation of the far-infrared radiation in ceramics was doped. In sintering, R-T property was measured by varying the grade temperature. The anatase-lighting apparatus and microstructures by using XRD and SEM were observed. $Sb_2O_3$. oxides additive. affected the semiconducting and emissivity and MnO was devoted an increase of resistivity. The specimen which only $Sb_2O_3$ is added to was high appeared far-infrared emissivity and Mno was not affacted the far-infrared radiation. The ceramics shows that it is effective in the structure of the human bodies as organic bodies and can be applied as electron device.

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