• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.33.1-33.1
• /
• 2009

Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3$-xBa($Ti_{0.9}Sn_{0.1})O_3$ [NKN-BTS-100x] ceramics doped with 1 mol% $MnO_2$ have been prepared by the conventional solid state method and their structural and piezoelectric properties were investigated. The NKN-BTS-100x ceramics exhibited a dense and homogeneous microstructure when they were sintered at $1030-1150^{\circ}C$. Grain growth was observed for the specimen sintered at relatively low temperature of $1050^{\circ}C$. A tetragonal/orthorhombic morphotropic phase boundary (MPB) in the perovskite structure was also appeared for the NKN-BTS-100x ceramics (0.04$1050^{\circ}C$. The enhanced piezoelectric properties in the NKN-BTS ceramics with a MPB composition were obtained. Especially, for the NKN-BTS-6 ceramics, a high dielectric constant (${\varepsilon}^T_3/\varepsilon_0=1,400$), piezoelectric constant ($d_{33}=237$) and electromechanical coupling factor ($k_p=0.42$) were obtained.

• The Korean Journal of Ceramics
• /
• v.2 no.4
• /
• pp.238-241
• /
• 1996

New porous BaTiO$_3$ thermistors were fabricated using graphite powders (0 to 10 wt. %) and their porosities were in the range of 9.1% to 16.2%. As results of impedance analysis, it was confirmed that the pores affected the grain-boundary resistance and the bulk (grain interior) resistance was constant as about 25 $\Omega$ at room temperature. The magnitude of PTCR effect $(p_{max}/p)$ markedly increased from 3 orders to 7 orders without addition of any acceptor dopant such as Mn or Cr.

• Journal of the Korean Ceramic Society
• /
• v.24 no.3
• /
• pp.251-256
• /
• 1987

The degradation of barium titanate ceramics was studied under the high AC electric field. At 150$^{\circ}C$, life time was measured as a function of grain size, controlled by varying sintering time at 1375$^{\circ}C$ and electrical properties, such as AC conductivity, capacitance and dissipation factor, were measured during degradation process. The life time decreased as grain size increased in the range of 2.44-8.23$\mu\textrm{m}$. The AC conductivity was remained constant and increased suddenly at the last stage of degradation process. The capacitance was slowly decreased and the dissipation factor was slowly increased as the degradaton progressed.

• Electrical & Electronic Materials
• /
• v.10 no.3
• /
• pp.255-261
• /
• 1997

In this study, pore-containing barium titanate ceramics were prepared with different porosities and pore sizes, in order to better understand how porosity and pore size affect electrical breakdown of barium titanate ceramics. A granulated barium titanate powder was mixed with three grades of commercial polymer microspheres up to 11wt%. The electrical breakdown test was performed at two different temperatures of 30.deg. C(below Tc) and 150.deg. C(above Tc) for samples immersed in a silicon oil bath using a 60kV de power supply. Electrical breakdown strength of pore containing barium titanate ceramics with porosity lower than 10% decreased as pore size and porosity increased. However, above the 10% porosity region, electrical breakdown strength decreased as the pore connectivity increased. From the experimental results, an optimum electrical breakdown model is proposed in an attempt to explain the effect of pores.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.1
• /
• pp.13-17
• /
• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.197-198
• /
• 2005

본 논문에서는 p-type (100)Si. (100)MgO 그리고 MgO/Si 기판 위에 RF Magnetron sputtering 법으로 $Ba_{0.5}Sr_{0.5}TiO_3$(BST) 박막을 증착 후 $600^{\circ}C$ 의 질소분위에서 RTA(Rapid Thermal Annealing)를 이용한 1 분간의 고온 급속열처리를 하였다. XRD 측정결과 모든 기판에서 (110) $Ba_{0.5}Sr_{0.5}TiO_3$의 주피크가 관찰되어졌고, 열처리 후 피크 세기가 증가함을 확인할 수 있었다. C-V 특성에서 각각의 기판에서 측정된 커패시턴스 값으로 계산된 유전율은 120(bare Si), 305(MgO/Si) 그리고 310(MgO)이었다. 누설 전류 특성에서는 150KV/cm이내의 인가전계에서 0.1$uA/cm^2$이하의 안정된 누설전류값을 보여주었다. 결론적으로 MgO 버퍼층을 이용한 기판이 BST 박막의 증착을 위한 기판으로써 효과적임을 알 수 있었다.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.3 s.32
• /
• pp.63-70
• /
• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2006.05a
• /
• pp.29.1-29.1
• /
• 2006

• Korean Journal of Optics and Photonics
• /
• v.10 no.5
• /
• pp.386-390
• /
• 1999

Erasable polarization holographic grating was recorded with two-wave mixing in PCN which was side-chain liquid crystalline polymalonic esters containing two symmetrical 4-cyanoazobenzene as photoresponsive groups. The diffraction efficiency of recorded grating was measured and the characteristics of recording, decay in a dark room and erasing by circularly polarized light were investigated. As the results, birefringence, $\Delta$n of PCN was measured $6.5{\times}10^{-2}$, which was 0~100 times higher than those of crystals such as Fe:$LiNbO_3$, Ce:$BaTiO_3$ crystals. Dark decay rates was $4.3{\times}10^{-5}$ %/hour, which showed the possibility of application as data storage media.

• Electrical & Electronic Materials
• /
• v.8 no.5
• /
• pp.640-647
• /
• 1995

In this study, the BaTiO$\sub$3/ capacitor add to MnO$\sub$2/ like depressor and shifter were investigated for temperature or voltage compensation by structural and electrical analysis. The relative density of BCTM, generating poly crystall and formation of lattice defect, has a 90[%] over as the CaTiO$\sub$3/ come out to control grain size. The current density of BCTM2 increased non-ohmic in high-electric field but that BCTM3 and BCTM4 had a few changing. The BCTM3 and BCTM4 unformated grain boundary shown temperature compensation properties, so that the dielectric constant was low value. The curie point was near 140[.deg. C] in BCTM1 and BCTM4, but BCTM3 and BCTM4 not shown the curie point. It is found that the charging energy of BCTM4 was changed 6[%] according to rising temperature from room temperature to 417[K]. The formation of BaMnO$\sub$3/ was low dielectric constant to change frequency and temperature.