• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.68-68
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• 2010

Electroluminescence (EL) characteristics of green-emission ZnS:Cu,Cl-based ac-type inorganic powder electroluminescent structures were examined by inserting carbon nanotubes (CNTs) into or next to the dielectric layer. For the top-emission type EL structure, where the luminescent light was emitted from the top of the structure, was fabricated by assembling in order, a top electrode, an emitting layer, a dielectric layer, and a bottom electrode from the top. $BaTiO_3$ powder mixed with CNTs was used as a dielectric layer or CNTs were deposited between the bottom electrode and $BaTiO_3$ dielectric layer in order to improve the role of the dielectric layer in the structure. Luminance of an EL structure with CNTs inclusion was greatly enhanced possibly due to the high dielectric constant in the dielectric layer of $BaTiO_3$/CNTs, which is one of hot research topics utilizing nano-objects for intensifying dielectric constant and reducing dielectric loss at the same time. A variation on the CNTs themselves and their inclusion methods in the dielectric layer has been exhorted, and the underlying mechanism for the role of CNTs in the EL structure will be explained in the poster. In order to extend the flexibility of EL devices, EL devices were fabricated on the paper substrate and their performance was compared other EL devices on the plastic-based substrate.

• Current Optics and Photonics
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• v.2 no.2
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• pp.179-184
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• 2018

Terahertz (THz) wave generation by periodically poled $BaTiO_3$ (PPBT) with a quasi-phase-matching (QPM) scheme based on cascaded difference-frequency generation (DFG) is theoretically analyzed. The cascaded DFG processes comprise cascaded Stokes and anti-Stokes processes. The calculated results indicate that the cascaded Stokes processes are stronger than the cascaded anti-Stokes processes. Compared to a noncascaded Stokes process, THz intensities from $20^{th}$-order cascaded Stokes processes increase by a factor of 30. THz waves with a maximum intensity of $0.37MW/mm^2$ can be generated by $20^{th}$-order cascaded DFG processes when the optical intensity is $10MW/mm^2$, corresponding to a quantum conversion efficiency of 1033%. The high quantum conversion efficiency of 1033% exceeds the Manley-Rowe limit, which indicates that PPBT is an excellent crystal for THz wave generation via cascaded DFG.

• Membrane Journal
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• v.33 no.1
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• pp.13-22
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• 2023

Despite high capacity of lithium metal anode, its uncontrollable dendrite growth results in the poor electrochemical (EC) performance (low Coulomb efficiency and limited cycle stability) and unsafe operation. In this study, we demonstrated a lithium metal anode protected with BaTiO₃/PVDF based piezoelectric layer to enhance its EC performance by utilizing the locally polarized lithium metal after volume expansions. As-formed lithium metal electrode deposited with BTO@PVDF layer exhibited an enhanced Coulombic efficiency (> 98% for 100 cycles) and facilitated lithium ion diffusions (lithium diffusion coefficient: D_Li+), revealing the effectiveness of piezoelectric layer deposited lithium metal electrode approach.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.6-11
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• 2001

More than ten kinds of oxide thin films and their heterostructure have been successfully fabricated on SrTiO$_3$(001) substrates by laser molecular beam epitaxy (laser MBE). Measurements of atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM) and X-ray small-angle reflectivity reveal that the surfaces and interfaces are atom-level-smooth. The unit cell layers and the lattice structure are perfect. The electrical and optical properties of BaTiO$_3$-x thin films and BaTiO$_3$/SrTiO$_3$ (BTO/STO) superlattices were examined. The all-perovskite oxide P-N junctions have been successfully fabricated and the better I-V curves were observed.

• Journal of Magnetics
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• v.19 no.2
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• pp.121-125
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• 2014

$CoFe_2O_4(CFO)/BaTiO_3(BTO)/CoFe_2O_4(CFO)$ multilayered thin films were deposited on $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition (PLD) system with KrF excimer laser (${\lambda}=248nm$). BTO, CFO, BTO/CFO and CFO/BTO/CFO structured thin films were prepared and their crystal structures and microstructures, as well as their magnetic and magneto-electrical properties, were studied. The C-V characteristics of these multilayered thin films with different capacitor structures were obtained to confirm the change in their capacitances under a magnetic field. Finally, the capacitance of the CFO/BTO/CFO thin film as a function of bias voltage under an in-plane magnetic field of 1,000 Oe increased to 951.04 pF at 1 MHz, from 831.90 pF measured under no magnetic field, indicating 14.3% increase in magnetocapacitance.

• Polymer(Korea)
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• v.33 no.3
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• pp.224-229
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• 2009

The dielectric properties of semi-IPN poly(phenylene oxide)(PPO) blend/$BaTiO_3$(BT) composites are investigated. The composites are fabricated via melt-mixing of crosslinker and peroxide in precursor PPO composite obtained by precipitating the suspension consisted of PPO, BT and toluene into methylethyl ketone, poor solvent of PPO. The permittivity of the precursor PPO composites shows higher value than that of integral-blended PPO composites by extruder and coincides with the theoretical value calculated by logarithmic rule of mixture. The blend of PPO and cross-linked triallyl isocyanurate is most effective for lowering the permittivity and loss tangent owing to the suppression of the orientation polarization of matrix. In contrast, 4,4'-(1,3-phenylene diisopropylidene) bisaniline, which has amine unit in its structure, increases the permittivity as well as loss tangent of the composite, but it has the ability to densify the matrix resin and the interfacial adhesion between the matrix and filler to improves flexural strength and modulus.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.16-20
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• 2004

YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.559-562
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• 2011

In this study, the effect of $Nb_2O_5$ and sintering time on the positive temperature of coefficient of resistivity (PTCR) behavior of lead free $Ba_{0.99}(Bi_{0.5}Na_{0.5})_{0.01}TiO_3$ (BBNT) ceramics were investigated in order to fabricate a PTC thermistor with high $T_c$ temperature more than $140^{\circ}C$. In particular, BBNT ceramic doped with 0.1mol% $Nb_2O_5$ and sintered at $1350^{\circ}C$ for 4 h has significantly increased Curie temperature ($T_c$) of about $200^{\circ}C$, showed good PTCR behavior of room-temperature resistivity ($\rho_{rt}$) of $40{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $43.78{\times}10^3$ and a large resistivity temperature factor (${\alpha}$) of 16.1%/$^{\circ}C$. With increasing addition of $Nb_2O_5$ content, the $\rho_{rt}$ decreased to a minimum value of $40\;{\Omega}cm$ at 0.1mol% $Nb_2O_5$ and the $\rho_{rt}$ increased for x value over 0.1 mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.981-984
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• 2001

The piezoelectric properties of 0.05pb(A $l_{0.5}$N $b_{0.5}$) $O_3$-0.95Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$+0.7wt%N $b_2$ $O_{5}$ +0.5wt%Mn $O_2$ceramics with the additives of BaC $O_3$were investigated. For the additions of BaC $O_3$, the dielectric constant ($\varepsilon$$^{T}$ $_{33}$ ), the piezoelectric constant ( $d_{33}$ ), the electromechanical coupling factor ( $k_{p}$ ), and . the mechanical quality factor ( $Q_{m}$ ) were increased, but dielectric loss (tan$\delta$) was decreased. The highest piezoelectric properties and dielectric properties were observed at the sintered temperature of 120$0^{\circ}C$ and 0.4 wt% of BaC $O_3$, and the properties of $d_{33}$ , $k_{p}$ , and $Q_{m}$ were 339(x10$^{-12}$ C/N), 59% and 1754, respectively.vely.y.y.