• Title/Summary/Keyword: $BaMgF_4$ thin films

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Thermal treatment dependences of MFS devices in $BaMgF_4$ thin films on silicon structures ($BaMgF_4$ 박막을 이용한 MFS 디바이스의 열처리 의존성)

  • 김채규;정순원;이상우;김광호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.59-62
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    • 1998
  • Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

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Electrode dependences of MFSFET Characteristics using BaMgF$_4$ Thin Films (BaMgF$_4$박막을 이용한 MFSFET특성의 전극의존성)

  • 김채규;정순원;김진규;김용성;이남열;김광호;유병곤;이원재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.465-468
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    • 1999
  • Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using $BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at $650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at $950^{\circ}C$. The electrical properties of MFSFET compared with using A1 and Pt electrodes.

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Properties of metal-ferroelectric thin film-silicon(MFS) structure using BaMgF$_{4}$ (BaMgF$_{4}$ 를 이용한 금속-강유전체박막-실리콘(MFS) 구조의 특성)

  • 김광호;김제덕;유병곤
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.5
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    • pp.102-107
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    • 1996
  • Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{\circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${\times}10^{11}{\Omega}{\cdot}cm$ before the annealing to about 5${\times}10^{13}{\Omega}{\cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${\times}10^{10}cm^{2}{\cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$\mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $\mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{\circ}C$/cm$^{2}$.

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Electrical Properties of $Ba_{1-x}Sr_xTiO_3$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition

  • Yoon, Jong-Guk;Yoon, Soon-Gil;Lee, Won-Jea
    • The Korean Journal of Ceramics
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    • v.1 no.4
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    • pp.204-208
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    • 1995
  • The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

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