• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.518-521
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• 2003

Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.199-203
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• 2004

Superconducting B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=2～4) thin films were prepared by single target DC-magnetron sputtering. And, that was compared with the B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=1～3) thin film fabricated by using the ion beam sputtering. Phase intergrowth among n=2-3, 3-4 and 4-5 phases was observed. The molar fraction of each phase in the mixed crystal of the deposited films was determined by x-ray diffraction analyses and investigated as a function of $O_2$ gas pressure during sputtering. We investigated the changes of the superconducting properties by molar fraction of each phase. Also, the thin film surface observation was carried out by atomic force microscope. The images show the average particle size decreases, and the distribution density of particles on the film surface was to increase with lower gas pressures. The fabrication conditions for selective growth of the single n=2, 3 and 4 phases in BiSrC $a_{n-l}$C $u_{n}$ $O_{x}$(n=2～4) thin film are discussed.e discussed.ussed.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.455-459
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• 2003

Tunneling spectra of B $i_2$S $r_2$Ca(C $u_{1-x}$ N $i_{x}$ )$_2$ $O_{8+}$$\delta$/ film by LPE method have been measured using break junctions. The energy gap 2$\Delta$ and 2$\Delta$/ $k_{B}$ $T_{c}$ $^{zero}$ increased with increase of ft. We obtained the energy gap Parameter 2$\Delta$(4.2 K) = 54.4~64 meV, and corresponding1y $\Delta$/ $k_{B}$ $T_{c}$ $^{zero}$=7.36~10.14, larger than the BCS value. The lattice constant c and critical temperature $T_{c}$ $^{zero}$ decrease with increase of $\chi$$_{L}$.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.723-731
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• 1995

P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ samples were prepared with x=0.4~0.6 and small $\delta$. To minimize the extent of oxidative decomposition reaction which occurs during the preparation of this phase, two annealing steps were adopted : First, sintered samples of P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ are oxygenated under 100% $O_2$, which leads to a large $\delta$(e.g., $\delta$=1.8). Second, the resulting samples are deoxygenated under 0.1~1.0% $O_2$in $N_2$, lowering $\delta$ to desired values. This two-step annealing procedure minimized the extent of oxidative decomposition. However, even with the two-step annealing procedure, the oxidative decomposition of P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ cannot be completely suppressed if $\delta$ is to be reduced to maximize $T_{c}$. Electrical resistivity data show that $T_{c}$(onset) is a function of hole concentration in the Cu $O_2$layer, and the optimum hole concentration for the maximum $T_{c}$ is achieved when $Ca^{2+}$is substituted for $Y^{3+}$between 0.5 and 0.6 A $T_{c}$(onset)=80K has been observed for one such sample, and this is the highest $T_{c}$(onset) yet reported for this compound.ed for this compound.nd.