• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.777-783
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• 2003

The mechanical properties of B$_4$C/Al composites normally depend on the species and quantity of reaction products between B$_4$C and Al and then the control of reaction products is necessary to make desirable composites for lightweight advanced or armor materials. TiB$_2$ is chemically inert with aluminum and has a lower contact angle (85$^{\circ}$ at 100$0^{\circ}C$) to liquid aluminum than B$_4$C. Thus, TiB$_2$ coating on B$_4$C may lower infiltration temperature of aluminum when the B$_4$C/Al composites is fabricated by infiltration process. In this study, the effects of TiB$_2$ on the microstructure and mechanical properties of the B$_4$C/Al composites have been investigated. TiB$_2$ coated B$_4$C powder was prepared using the sol-gel technique. It was found that the B$_4$C surface is homogeneously covered with TiB$_2$ having a particles size of 20-50 nm. While the B$_4$C/Al composites prepared by infiltration after TiB$_2$ coating had 17 wt% of unreacted Al, on the other hand, the B$_4$C/Al composites without coating included 14 wt% of Al. As a result, the composites infiltrated after the coating showed higher fracture toughness and lower hardness. This strongly suggests that TiB$_2$ not only lowers the infiltration temperature, but also inhibits the reaction between B$_4$C and Al.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.859-860
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• 2006

TiC-$TiB_2$-SiC system was a ternary eutectic, whose eutectic composition was 34TiC-$22TiB_2$-44SiC (mol%). TiC-$TiB_2$-SiC ternary eutectic composite were synthesized by a floating zone method using TiC, $TiB_2$ and SiC powders as starting materials. The TiC-$TiB_2$-SiC eutectic composite showed a lamellar texture. TiC(022), $TiB_2(010)$ and SiC(111) of the eutectic composite were perpendicular to the growth direction. TiC-$TiB_2$-SiC ternary eutectic composite had specific relationship among the crystal planes: TiC[011]//$TiB_2[010]$//SiC[112], TiC(200)//$TiB_2$(001)//SiC(402) and $TiC(1\bar{1}1)$//$TiB_2(101)$//SiC(220).

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.538-545
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• 2009

The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40 and 45vol.% of Zirconium Diboride (hereafter, $ZrB_2$) powders with Silicon Carbide (hereafter, SiC) matrix. The SiC-$ZrB_2$ composites, the sintered compacts, were produced through Spark Plasma Sintering (hereafter, SPS), and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffractometer (hereafter, XRD) analysis. The relative density of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, and SiC+45vol.%$ZrB_2$ composites were 88.64%, 76.80%, 79.09% and 88.12%, respectively. The XRD phase analysis of the sintered compacts demonstrated high phase of SiC and $ZrB_2$ but low phase of $ZrO_2$. Among the SiC-$ZrB_2$ composites, the SiC+35vol.%$ZrB_2$ composite had the lowest flexural strength, 148.49MPa, and the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 204.85MPa, at room temperature. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites were $6.74\times10^{-4}$, $4.56\times10^{-3}$, $1.92\times10^{-3}$, and $4.95\times10^{-3}\Omega{\cdot}cm$ at room temperature, respectively. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$ SiC+40vol.%$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites had Positive Temperature Coefficient Resistance (hereafter, PTCR) in the temperature range from $25^{\circ}C$ to $500^{\circ}C$. The V-I characteristics of the SiC+40vol.%$ZrB_2$ composite had a linear shape. Therefore, it is considered that the SiC+40vol.%$ZrB_2$ composite containing the most outstanding mechanical properties, high resistance temperature coefficient and PTCR characteristics among the sintered compacts can be used as an energy friendly ceramic heater or electrode material through SPS.

• Bulletin of the Korean Chemical Society
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• v.8 no.3
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• pp.185-189
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• 1987

Reactions of $Ir(ClO)_4(CO)(PPh_3)_2$ with dicyano olefins, cis-NCCH = CH$CH_2$$CH_2$CN (cDC1B), trans-NCCH = CH$CH_2$$CH_2$CN (tDC1B), trans-NC$CH_2$CH = CH$CH_2$CN (tDC2B), and NC$CH_2$$CH_2$$CH_2$$CH_2$CN (DCB) produce binuclear dicationic iridium (I) complexes, $[(CO)(PPh_3)_2Ir-NC-A-CN-Ir(PPh_3)_2(CO)](ClO_4)_2$ (NC-A-CN = cDC1B (1a), tDC1B (1b), tDC2B (1c), DCB (1d)). Complexes 1a-1d react with hydrogen to give binuclear dicationic tetrahydrido iridium (Ⅲ ) complexes, $[(CO)(PPh_3)_2(H)_2Ir-NC-A-CN-Ir(H)_2(PPh_3)_2(CO)](ClO_4)_2$ (NC-A-CN = cDC1B (2a), tDC1B (2b), tDC2B (2c), DCB (2d)). Complexes 2a and 2b catalyze the hydrogenation of cDC1B and tDC1B, respectively to give DCB, while the complex 2c is catalytically active for the isomerization of tDC2B to give cDC1B and tDC1B and the hydrogenation of tDC2B to give DCB at $100^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1252_1253
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.97[%], 74.62[%], 77.99[%] and 72.61[%] respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of ZrO2 phase. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are $4.57{\times}10^{-1}$, $2.13{\times}10^{-1}$, $1.53{\times}10^{-1}$ and $6.37{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater above 1000[$^{\circ}C$].

• Journal of the Chungcheong Mathematical Society
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• v.23 no.2
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• pp.231-236
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• 2010

Using the properties of the concave function, we show that the Hausdorff dimension of the product $C_{\frac{a+b}{2},\frac{a+b}{2}}{\times}C_{\frac{a+b}{2},\frac{a+b}{2}}$ of the same symmetric Cantor sets is greater than that of the product $C_{a,b}{\times}C_{a,b}$ of the same anti-symmetric Cantor sets. Further, for $1/e^2$ < a, b < 1/2, we also show that the dimension of the product $C_{a,a}{\times}C_{b,b}$ of the different symmetric Cantor sets is greater than that of the product $C_{\frac{a+b}{2},\frac{a+b}{2}}{\times}C_{\frac{a+b}{2},\frac{a+b}{2}}$ of the same symmetric Cantor sets using the concavity. Finally we give a concrete example showing that the latter argument does not hold for all 0 < a, b < 1/2.

• Proceedings of the Korea Database Society Conference
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• 2001.11a
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• pp.609-621
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• 2001

인터넷 시대를 맞이하여 그간 기업과 개인간(Business to Customer; B2C), 기업과 기업간(Business to Business; B2B), 기업과 정부간(Business to Government; B2G) 등 많은 비즈니스 거래유형이 생겨나서 일부 실무에 적용되고 있으나, B2C 비즈니스(쇼핑몰)는 아직은 활성화 단계에 있다고 볼 수 없을 정도로 그 활용도가 매우 미미하다. 따라서 본 연구는 B2C 비즈니스(쇼핑몰)에 한하여 실제로 실무에서 활용되고 있는 현황들과 선행 연구들을 구체적으로 조사해본 후 어떤 문제점들이 있는지를 파악 하고자 한다. 또한 그런 자료들을 기초로 해서 정말로 B2C 비즈니스(쇼핑몰)가 현실적으로 활성화 될 수 있는지, 없는지를 살펴보려고 한다. 활성화 될 수 있다면 그 방안은 무엇이며, 없다면 왜 그런지를 다시 고찰하여 그 대안들을 좀더 세부적으로 요약 정리하고, 향후 B2C 비즈니스 활성화 방안과 시사점들을 제시하고자 한다.

• Journal of Powder Materials
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• v.9 no.5
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• pp.352-358
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• 2002

The effects of boron or manganese added as $B_4C$, Mn, $TiB_2$, B on TiC-30vo1.%$Ni_3Al$ cermet sintered at 1380 and $1400^{\circ}C$ for 1 hour, were examined in relation with shrinkage, relative density, microstructure, lattice parameter, hardness and fracture toughness ($K_{IC}$). The results are summarized as follows: 1) The highest shrink-age showed about 30.5% in the specimen added B$_4$C and the maximum relative density was about 99% in the specimen added $TiB_2$; 2) The grains of TiC were grown during sintering and made the surrounding structure by adding boron and manganese. The largest grain size showed about $2.8\mutextrm{m}$ in the specimen with boron sintered at $1400^{\circ}C$;3) The lattice parameter of TiC was about $4.325\AA$ and $Ni_3Al$ about $3.592\AA$ by adding other elements; 4) The highest hardness was about $1100kgf/\textrm{mm}^2$ in the specimen with B4C; 5) The fracture toughness ($K_{IC}$) showed about $15MNm^{-3/2}$ in the specimen added $TiB_2$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.9
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• pp.1757-1763
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between ${\beta}-SiC$ and $ZrB_2$ were not observed in the XRD analysis. The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.93[%], 74.62[%], 74.99[%] and 72.61[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The lowest flexural strength, 108.79[MPa], shown in SiC+15[vol.%] $ZrB_2$ composite and the highest - 220.15[MPa] - in SiC+20[vol.%] $ZrB_2$composite at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites moves in accord with that of the relative density. The electrical resistivities of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 4.57${\times}10^{-1}$, 2.13${\times}10^{-1}$, 1.53${\times}10^{-1}$ and 6.37${\times}10^{-2}$[${\Omega}$ cm] at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$. SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. The declination of V-I characteristics of SiC+20[vol.%]$ZrB_2$ composite is 3.72${\times}10^{-1}$. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode above 1000[$^{\circ}C$]

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.191-193
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC-39vol.% $TiB_2$ and using 61vol.% SiC-39vol.% $ZrB_2$ powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the SiC-$TiB_2$, and SiC-$ZrB_2$ composites. The ${\beta}\;{\alpha}$-SiC phase transformation was occurred on the $SiC-TiB_2$, $SiC-ZrB_2$ composites. The relative density, the flexural strength and Young's modulus showed respectively value of 98.57%, 226.06Mpa and $86.37{\times}10^3Mpa$ in SiC-$ZrB_2$ composites.