• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.159-159
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• 2010

펄스 직류 전원 $BCl_3$/He 플라즈마를 사용하여 GaAs의 건식 식각을 연구하였다. 공정 변수는 가스 유량 (0~100% $BCl_3$ in $BCl_3$/He), 펄스 파워 ($450{\sim}600\;{\nu}$), 펄스 주파수 (100~250 KHz), 펄스 시간 ($0.4{\sim}1.2\;{\mu}s$)이었다. 식각 공정 후 식각률, 포토레지스트에 대한 식각 선택도, 표면 거칠기는 표면 단차 측정기를 이용하였다. 식각 공정 동안 플라즈마 광 특성 분석은 광학 발광분석기 (Optical emission spectroscopy)를 사용하였다. 실험 후 주사 전자 현미경을 이용, 식각 후 시료의 단면과 표면을 관찰하였다. 실험 결과에 의하면 1) 펄스 파워, 주파수, 시간을 고정 ($500\;{\nu}$, $0.7\;{\mu}s$, 200 KHz)하고 10% He 가스가 혼합되어 있는 조건에서 GaAs의 식각률이 순수한 $BCl_3$를 사용한 것보다 높았다. 이를 통해 식각 공정에서 일정량 이하의 He 혼합은 GaAs 식각률을 증가시키는 시너지효과가 있음을 알 수 있었다. 2) 그러나 약 20% 이상의 He 가스의 혼합은 GaAs의 식각 속도를 저하시켰다. 3) 10% He (9 sccm $BCl_3/1$ sccm He), 200 KHz 펄스 주파수, $0.7\;{\mu}s$ 펄스 시간의 조건에서 펄스 파워가 증가함에 따라 GaAs의 식각률 또한 선형적으로 증가하였다. 4) 특히, $600\;{\nu}$의 파워에서 식각률은 ${\sim}0.5\;{\mu}m/min$로 가장 높았다. 5) 표면 단차 측정기와 전자현미경을 이용하여 식각한 GaAs를 분석한 결과 10% He이 혼합되어 있는 조건에서는 우수한 수직 측벽과 매끈한 표면 (RMS roughness <1 nm)을 관찰할 수 있었다. 6) 10% He이 혼합된 $BCl_3$/He 펄스 직류 플라즈마 식각 후 XPS 분석결과에서도 기준 샘플과 비교하였을 때, 공정 후의 GaAs 표면이 화학적으로 깨끗하며 잔류물이 거의 검출되지 않았다. 위의 결과를 정리하였을 때, 펄스 직류 $BCl_3$/He 플라즈마는 GaAs의 식각에서 매우 우수한 공정 결과를 나타내었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.681-685
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• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.718-722
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• 2011

In this work, we investigated to the etching characteristics of the TiN thin film in He/$BCl_3/Cl_2$ plasma. The etch rate was measured by the gas mixing ratio, the RF power, the DC bias voltage and the process pressure. The maximum etch rate in He/$BCl_3/Cl_2$ plasma was 59 nm/min. The etch rate increased as the RF power and the DC-bias voltage was increased. The chemical reaction on the surface of the etched the TiN thin films was investigated with X-ray photoelectron spectroscopy (XPS). The intensity of Ti 2p and N 1s peaks are varied during etching process. A new peak was appeared in He/$BCl_3/Cl_2$ plasma. The new peak was revealed Ti-$Cl_x$ by Cl 2p peak of XPS wild scan spectra analysis.

• Biomedical Science Letters
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• v.12 no.2
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• pp.57-63
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• 2006

Deazaadenosine analogs such as 3-deazaadenosine (DZA), 3-deazaaristeromycin (DZAri) and ara-3-deazaadenine (DZAra-A) were developed as inhibitors of S-adenosylhomocysteine (Ado-Hcy) hydrolase (EC 3.3.1.1). These analogs were reported to induce apoptosis in human and murine leukemic cells. But, the mechanism involved in this apoptosis was not clarified yet. In the present study, we analyze the apoptosis induced by deazaadenosine analogs in human cervival cancer cell line, HeLa and the effect of Bcl-2 on this apoptosis. Whereas neither DZAri nor DZAra-A showed inhibitory effect on HeLa cell growth, DZA induced apoptosis in HeLa cells accompanied by cytochrome c release and activation of various caspases such as caspase-2,-8,-9 and -3. In HeLa-bcl-2 cell line, a stable transfectant of HeLa cell to overexpress Bcl-2, cytochrome c release, activation of all these caspases and the resulted apoptosis by DZA were completely prevented. By in vitro assay of cytochrome c release, in addition, DZA induced cytochrome c release from purified mitochondria of HeLa-pcDNA3 cells, but not HeLa-bcl-2 cells, even in the absence of cytosolic fraction. Therefore, it can be suggested that DZA might damage directly mitochondria leading to activate intrinsic pathway of caspase and thus induce apoptosis. DZA-induced apoptosis in HeLa cells may be in a bcl-2-inhibitable manner and irrelative of Ado-Hcy hydrolase.

• Journal of Life Science
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• v.20 no.4
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• pp.572-577
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• 2010

The purpose of this study was to find out the Bcl-2 (B-cell leukemia/lymphoma-2), Bax, and caspase-3(cysteine-aspartic proteases-3) protein expression in soleus and EDL muscle according to treadmill exercise intensity in 60 week-old SD rats. The SD rats were randomly divided into four groups (n=10 in each group): control (CON), low intensity exercise (LE), moderate intensity exercise (ME), and high intensity exercise (HE). The exercise was given to the rats for 8 wk, 5 day/wk. The animals underwent treadmill exercise at intensities of 30 min at 8 m/min for the LE group, 15 min at 16 m/min for the ME group, and 9 min at 24 m/min for the HE group. The results were as follows: the expression of Bcl-2 protein was lowest in the HE group and the expression of Bax protein was highest in the HE group. The expression of caspase-3 (cleaved form) protein was observed in the HE group. For the different types of muscle fiber, Bcl-2 protein expression in the soleus muscle was decreased in all groups. Bax protein expression in the soleus muscle was increased in the HE group only. Bcl-2 protein expression in the EDL muscle was decreased in the HE group, and Bax protein expression in the EDL muscle was increased in the ME and HE groups. Consequently, the protein expression related to the aged rats shows a difference according to the intensity of exercise. In addition, caspase-3 protein expression appeared in the HE group; however, in all amounts of intensity, DNA fragmentation was not observed. Therefore, apoptosis on skeletal muscles of aged mice can be intervened with optimal exercise. On the other hand, high intensity exercise can potentially accelerate the apoptosis of muscle fiber in aged rats.

• The Journal of Korean Obstetrics and Gynecology
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• v.23 no.3
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• pp.38-55
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• 2010

Purpose: This study was designed to find out the anti-cancer effects of Samultang-Gami which was composed of Rehmanniae Radix(RR), Angelicae Gigantis Radix(AGR), Cnidii Rhizoma(CR), Paeoniae Radix(PR), Cortex Moutan Radicis(CMR), Hedyotis Diffusa(HD) and Caesalpinia Sappan on HeLa, HepG2 and AGS cells. Methods: Various cancer cell lines including HeLa, HepG2 and AGS cells, were used. In vitro anti-cancer effects were measured by MTT assay using cancer cell lines treated with various concentrations of 70% ethanol extract of Samultang-Gami. Expression of cell cycle arrest mediators including Bax, Bcl-2, p53 and DARP-1 proteins were measured by Western blot analysis. Results: 1. Samultang-Gami decreased the viability of HeLa and HepG cells in a dosedependent manner. 2. AGR, CMR, PR and HD decreased the viability of HeLa, HepG2 and AGS cells. 3. We could observe that the decreased Bax and Bcl-2 expression level and the increased PARP-1 expression level by Samultang-Gami extracts treated in HeLa cells. 4. We could observe that the decreased Bcl-2 expression level and the increased Bax, p53 and PARP-1 expression level by RR extracts treated in HeLa cells. and also could observe that the reduction of the protein level of Bcl-2, p53 and PARP-1 and the increase of the protein level of Bax by PR in HeLa cells. 5. We could observe that the increased p53 expression level, the decreased PARP-1's that and the unchanged Bax and Bcl-2's that by Samultang-Gami extracts treated in HepG2 cells. 6. We could observe that the reduced Bcl-2 expression level by each of RR extracts and PR extracts in HepG2 cells. 7. The treatment of Samultang-Gami in AGS cells didn't have any effect on the expression level of Bax, Bcl-2, p53 and PARP-1. 8. We could observe that the increased p53 and PARP-1 expression level by each of CR, RR and PR extracts in AGS cells. Conclusion: Taken together, we suggest that Samultang-Gami exhibits cytotoxic effects on HeLa, HepG2 and AGS cells, causing apoptosis. The results showed that Samultang-Gami may do so by regulating the expression of specific target molecules that promote efficient apoptotic cell death in a dose-dependent manner.

• Radiation Oncology Journal
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• v.21 no.3
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• pp.222-226
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• 2003

Purpose: The interaction of the Fas: Fas ligand has been recognized to play an important role in radiation induced apoptosis. The purpose of this study was to investigate the role of Fas and Fas ligand mutations, in radiation-induced apoptosis in vivo. Materials and Methods: Mice with a mutation in the Fas ($C57BL/6J-Fas^{lpr}$) and its normal control (C57BL/6J) and the Fas ligand ($C3H/HeJ-Fas^{gld}$) and its normal control (C3H/HeJ), were used in this study. Eight-week old male mice were given whole body radiation. After irradiation, the mice were killed at various time intervals, and their spleens collected. Tissue sample was stained with hematoxylin-eosin, and the numbers of apoptotic cells scored. The regulating molecules of apoptosis including the p53, Bcl-2, Bax, $Bcl-X_L\;and\;Bcl-X_s$ genes were also analyzed by Western blotting. Results: With 2.5 Gy and 10 Gy of irradiation, the levels of apoptosis were lower in the $C57BL/6J-Fas^{lpr}\;and\;C3H/HeJ-Fas^{gld}$ mice than in the control mice (p<0.05). With the expression of apoptosis regulating molecules, the Bax was increased in both the C57BL/6J and C3H/HeJ mice in response to radiation; the peak levels of Bax in the C57BL6J and C3H/HeJ were 3 and 3.3-fold higher after 8hr, respectively. However the Bax was not increased in either the $C57BL/6J-Fas^{lpr}\;or\;C3H/HeJ-Fas^{gld}$mice. The p53, Bcl-X_L,\;Bcl-X_S$and Bcl-2 showed no significant changes in the $C57BL/6J-Fas^{lpr},\;C3H/HeJ-Fas^{gld}$, C57BL/6J and C3H/HeJ mice. Conclusion: The levels of radiation-induced apoptosis were lower in the lpr and gld, than the control mice, which seemed to be related to the level of Bax activation due to the radiation in the lpr and gld mice. This result suggests that Fas/Fas L plays an important role in radiation-induced apoptosis in vivo.

• Biomedical Science Letters
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• v.17 no.4
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• pp.291-295
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• 2011

PD98059 is the specific inhibitor of extracellular signaling-regulated kinase (ERK) kinase (MEK). ERK is involved in a mitogen-activated protein kinase (MAPK) cascade controlling cell growth and differentiation. Although the inhibition of ERK is known to induce cell death in various cell lines, this effect is still controversial and the role of PD98059 on the death of HeLa $S_3$ cells, a subclone of the cervical cancer cell line, is not well understood. The apoptosis of HeLa $S_3$ cells increased after the treatment of 50 ${\mu}M$ PD98059. The induction of apoptosis by PD98059 was occurred in a time- and a dose-dependent manners. The expression of Bcl-2 was reduced in accordance with decrease of ERK2 expression. Taken together, these results indicate that PD98059 has a cytotoxicity in HeLa $S_3$ cells and it may be used as a potential target for the treatment of cervical cancer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.188-189
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• 2007

The etching characteristics of $Al_2O_3$ films using the inductively coupled plasma (ICP) was investigated. The etch gas was the mixture of $BCl_3$ and He. The effect of ICP source and bias powers on etch rate and etch selectivity to polycrystalline Si was investigated in the etch process of $Al_2O_3$. The etch rate of $Al_2O_3$ film was 23nm/min when the source power and bias power were 600W and 60W, respectively. The results also indicated that the etch selectivity to polycrystalline Si could not be enhanced to be higher than 1.0 by changing the ICP source power and bias power, under the experimental conditions used in the present work. Based on plasma parameters extracted from Langmuir probe data, the etching mechanism of $Al_2O_3$ film was discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.221-221
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• 2010

본 실험에서는 축전결합형 고주파 플라즈마와 $BCl_3$와 He의 혼합가스를 이용하여 화합물 반도체인 GaAs와 AlGaAs의 건식식각에 대해 연구하였다. 공정변수로는 첫째, BCl3와 He의 혼합가스 비율을 0%에서 100%까지 변화시켰다. 둘째, 고주파 파워를 50 W에서 200W 까지 변화를 주었고, 셋째, 공정압력을 120 mTorr~300 mTorr 까지 변화시켰다. 식각 실험을 마친 시료는 표면 단차 측정기와, 주사전자현미경을 이용하여 식각률과 선택비, 표면거칠기, 표면형상에 대하여 분석을 진행하였다. 또한, 광학발광분석계 (OES)를 이용하여 건식식각 실험 중 혼합가스에 의해 발생하는 플라즈마의 발광특성에 대한 실시간 분석을 하였다. 결과에 따르면, 1) 혼합가스에서 He의 비율이 20%일 때 GaAs와 AlGaAs 시료의 식각율이 $0.7\;{\mu}m/min$ 와 $0.6\;{\mu}m/min$ 로 가장 높게 나타났다. 2) 감광제에 대한 시료의 선택비 또한 동일 조건에서 GaAs의 경우 1 : 12, AlGaAs의 경우 1:8로 가장 높게 나타났다. 3)고주파 파워의 변화에 따른 식각률의 경우 100 W에서 GaAs 의 경우 $0.6\;{\mu}m/min$, AlGaAs의 경우 $0.5\;{\mu}m/min$ 이었고, 고주파 파워가 증가할수록 식각률은 감소하였다. 4) 감광제에 대한 시료의 식각 선택비의 경우 50 W에서 GaAs 시료가 1:14, AlGaAs 시료가 1:10으로 가장 높은 선택비를 보였고 고주파 전원이 증가할수록 선형적으로 감소하였다. 5) 표면거칠기는 50~100 W 구간에서는 1.0~1.5 nm 으로 큰 증가폭이 없다가 150 W 이상에서는 3.0~5.0 nm 으로 증가하였다. 반응기의 압력이 120 mTorr에서 300 mTorr로 변화할 때 식각률과 선택비는 비교적 선형적으로 감소하였으며, 표면거칠기 또한 증가하였다. 결론적으로 $BCl_3/He$ 고주파 플라즈마에서 약 20%의 He을 포함하고 있을 때 가장 우수한 건식 식각 결과를 얻었다.