• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.404-407
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• 2016

In this study, to develop low temperature sintering capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of $B_2O_3$ addition on the dielectric properties and microstructure was investigated. The XRD patterns demonstrated that all the specimens showed Perovskite phase, and secondary phases are indicated in the measurement range of XRD. And also, temperature coefficient of capacitance(TCC) of all the specimen sintered at $1,180^{\circ}C$ showed +3~-56% except for x=0.006. For all the specimens, observed one peak was tetragonal cubic difuse phase transition temperature(Tc), which is located in the vicinity of room temperature.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.797-802
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• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.424-427
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• 2015

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3+xCuO$ (x= 0.006~0.010) ceramics were prepared by the conventional solid-state reaction method. The effects of CuO addition on the microstructure and dielectric properties was investigated. All specimens indicated rhombohedral phase without any secondary phase. As CuO addition increased, the variation width of TCC was increased at more than $40^{\circ}C$. Also, the specimen with x=0.007 sintered at $1,250^{\circ}C$ showed the high dielectric constant of 9,632 in spite of low temperature sintering temperature.