• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.585-588
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• 2005

The dissolution characteristic of metal shows the different tendency according to the applied electrical potential, the kind of electrolyte and pH value, etc. In the micro electrochemical machining (ECM), unfavorable oxide/passive layer formation and overall corrosion of electrodes must be prevented. The anodic polarization curve of nickel has distinct three dissolution regions, i.e. two active regions and the transpassive dissolution region. In this paper, the stable electrode potentials of workpiece and tool were determined in sulfuric acid and hydrochloric acid solution, respectively. In each solution, different machining property was shown and possible electrochemical reactions were discussed. On the basis of this experiment, the methodology to obtain the proper electrode potential was suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Korean Journal of Agricultural Science
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• v.8 no.1
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• pp.82-89
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• 1981

The characteristic of rainfall intensity in short duration is very important to calculate short-term runoff in small watershed by Rational method. Therefore, the purpose of this study is to derive the most proper formula on the probable rainfall intensity in each return period in Daejeon area. And the results of this study could be utilized for the design of drainage-structures in small watershed, drainage system in urban area and flood control in small river basin. The result s of this study are summerized as follows. 1. Gumbel-Chow method which shows the mean value was chosen to calculate the probable rainfall in tensity in each return periods. 2. According to statistical judgement, probable rainfall intensity formula of Japanese type($I={\frac{a}{t+b}}$, see Table-6) shows the most proper one among other types of formula like Talbot type, Sherman type and Characteristic coefficient method. Probable rainfall in tensity value of Japanese type in Daejeon area shows well coincidence with the one obtained by applying prof. Park's n-coefficient to Monobe formula $I=({\frac{R_{24}}{24}})({\frac{T}{t}})^{0.5486}$. On the other hand, the value by Monobe formula with n-coefficient of 2/3 which is being used as a disign criterison by M. O. C. shows large difference from the fore-mentioned results (see Table-7). Consequently the value by Monobe formula might be judged that it is too much overestimated one as a design criterion. 3. Short-term runoff in small water shed could be calculated more reasonably in Daejeon area through this probable rainfall in tensity formula.

• Journal of Adhesion and Interface
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• v.3 no.2
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• pp.1-8
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• 2002

Polyurethane NCO prepolymers were synthesized with the polyols such as PTMG, GP and the isocyanate such as TDI at $40^{\circ}C$ for 8.5 minutes. As average molecular weights (${\bar{M_n}}$: 1000, 2000, 3000, 4000) of PTMG, and GP were decreased from 4000 to 1000, ratio of oil gelation increased from 298%, to 440%, for Bunker B. When oil and water were emulsified, the ratio of gelation was increased approximately two times. Ratio of gelation for emulsive Bunker B was increased from 402% to 910%, for PTMG1000 and increased from 440%, W 958% for GPI1000. Ratio of oil gelation for emulsive Bunk C which has higher viscosity than Bunker B was measured w 923% for PTMG1000 made with chain extender, i.e. EG, and measured to 1098% for GP1000. The gel made from GP which has three functional group showed soft and strong characteristic, as a result, it can be removed easily from oil spilled ocean.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.6
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• pp.82-87
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• 2009

Recently, a great variety of radio services are provided and interference problem between radio systems is being watched remarkably. Therefore, a study of interference between radio systems is needed. In this paper, compatibility between Ultra Wideband (UWB) and Terestrial Digital Multi-media Broadcasting (T-DMB) is analyzed and then distance between them is computed. UWB systems have a very broad frequency characteristic. A big advantage is to share frequency that is already allocated to other systems. T-DMB is a good point that while L-Band is already used for DAB, T_DMB is free of charge. AT-DMB (Advanced T-DMB) is being standardized recently. The result which is analyzed for the interference effects between UWB and T-DMB Systems is 10 [dB], which is value calculated by C/(N0+I), at 80 [m] and then the value is saturated at 150 [m].

• Journal of the Korean Society of Food Science and Nutrition
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• v.32 no.6
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• pp.806-811
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• 2003

Effects of pH, temperature, light, sugars, organic acids, metal ions, ascorbic acid, thiamine nicotinic acid and pyridoxine on the stability of the color of the cranberry solution were investigated. The pH had marked influences on the color of the cranberry solution: i.e., the color of the cranberry solution was more intense at low pH. It showed characteristic bathochromic shift as the pH of the solution increased. The half-lives of olor value were 34 days at 37$^{\circ}C$, 91 mins at 9$0^{\circ}C$ and 29 mins at 12$0^{\circ}C$. Light gave an adverse effect to the stability of the color. The color degradation can be minimized by shielding the light from the cranberry solution. Among the sugars tested, fructose was the most deleterious followed by sucrose, galactose, maltose and glucose. Fumaric acid was found to be the most effective in stabilizing the color followed by citric acid, malic acid, acetic acid, while tartaric acid was found to be deleterious. Among the metal ions tested N $a^{+}$ and $Mg^{2+}$ were found to be effective in stabilizing the color, while M $n^{2+}$ was found to be the most deleterious followed by F $e^{2+}$, $K^{+}$ and $Ca^{2+}$. Ascorbic acid was found to be deleterious considerably followed by thiamine, while nicotinic acid and pyridoxine were found to be effective in stabilizing the color feebly.or feebly.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.58-61
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• 2004

A novel single-phase induction machine drive containing full bridge inverter is presented. The drive is intended for conveyor system or a similar type of application requiring variable-speed operation with a fan-type load characteristic. An experimental drive based on the proposed setup has been built to verify its practical viability. The paper presents the results obtained from an investigation and discusses the properties and characteristics of the drive for the entire speed range from 0 to 60Hz.

• Proceedings of the KIEE Conference
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• summer
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• pp.1373-1375
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• 2004

This paper presents the design of DC protection Relay for Light Rail Transit system, which is very beginning product in domestic. Protection Function characteristic, principle and I/O interface including interlock signal has been introduced. The protection algorithm and EMC characteristics have been certified by official organization and Type test report has been introduced. Up to date in domestic, the test procedure for DC Protection relay hasn't been established so the new method and test equipment based on IEC regulations are proposed. Finally the product will be proved based on field test.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.120-122
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• 2007

A new power quality disturbance generator is proposed. The proposed scheme overcomes the problem of voltage drop of the conventional generator in normal mode. Therefore, the output voltage of the proposed generator is constant in normal mode and the efficiency of the series transformer is improved. The proposed generator has good feature of simple structure, cost effective implementation, high reliability and easy control. The usefulness of the scheme is verified through simulation and experiments.