• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.747-751
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• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$thin films is 285 $\AA$/min under Cl$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$over CeO$_2$and $Y_2$O$_3$are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1408-1409
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• 2007

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present modeling, we adopt capacitively coupled plasma with ring electrode inserted in the space between the substrate and the target, graphite. This system may take an advantage of ${\mu}m$-sized droplets from the sheath electric field near the substrate. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1376-1382
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• 2016

The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.94-94
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• 1996

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.24-25
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.18-18
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• 1999

• Journal of Periodontal and Implant Science
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• v.28 no.2
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• pp.281-291
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• 1998

Chitosan is a biodegradable and non-toxic material with a molecular weight of 800-1,500Kd which can be obtained in various forms with extraordinary chemical structures and biological characteristics of which enables it to be used in many fields as a biomaterial. Ion irradiation is a useful tool to modify chemical structures and physical properties of high molecular weight polymers. The basic hypothesis of this study is that when surface properties of chitosan in a sponge form are modified with ion beam-irradiation and cell adhesion properties of chitosan would improve and thereby increase the regenerative ability of the damaged bone. The purpose of this study was to illuminate the changes in the cytocompatibility of chitosan sponges after ion beam-irradiation as a preliminary research. Argon($Ar^+$) ions were irradiated at doses of $5{\times}10^{13}$, $5{\times}10^{15}$ at 35 keV on surfaces of each sponges. Cell adhesion and activity of alkaline phosphatases were studied using rat fetal osteoblasts. The results of this study show hat ion beam-irradiation at optimal doses($5{\times}10^^{13}\;Ar^+\;ion/cm^2$) is a useful method to improve cytocompatibility without sacrificing cell viability and any changing cell phenotypes. These results show that ion beam-irradiated chitosan sponges can be further applied as carriers in tissue engineering and as bone filling materials.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.404-409
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• 1993

Adorption of nitric oxide on the Pt(III) surface sputtered by Ar-ion has been studied using thermal desorption spectroscopy and Auger electron spectroscopy. Ar-ion sputtering creates a precursor state of ($NO\beta$ stage) adsorbe dat defect sites. The precursor state is characterized by the terminal bent species . At low coverge mos 샐 adsorbed NO dissociates . And as increasing the coverage, the fraction of dissociation remains about 80%.