• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.9-14
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• 2006

Sample preparation plays a critical role in microstructure analysis using TEM. Although TEM specimen has been usually prepared by jet-polishing or Ar-ion beam milling technique. these methods could not be applied to YBCO CC which is composed of IBAD or RABiTS substrates, several buffet layers, and YBCO superconducting layer because of big difference in mechanical strengths between the metallic phase and oxide phases. To obtain useful cross-sectional information such as interface between the phases or second phases in YBCO CC, it is prerequisite to secure the large area of thin section in the cross-sectional direction. The superconducting layer or the buffer layers are relatively weak and fragile compared to the metallic substrate such as Ni-5wt%W RABiTS of Hastelloy-based IBAD, and preferential removal of weak ceramic phases during polishing steps makes specimen preparation almost impossible. Tripod polisher and small jig were home-made and employed to sample preparation. The polishing angle was maintained <$1^{\circ}$ throughout the polishing steps using 2 micrometers attached to the tripod plate. TEM specimens with large and thin area could be secured and used for RABiTS/IBAD substrate analyses. In some cases, additional Ar-beam ion milling with low beam current and impinging angle was used for less than 30 sec. to remove debris or polishing media attacked to the specimens.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.593-597
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• 1993

Adhesion of CVD W to the TiN glue layer in the blanket W process which is a promising candidate for filing contact holes in subhalfmicron ULSIs has been investigated. The adhesion was enhanced with increasing the W film thickness due to the decrease of the TiN film stress. The adhesion strength was increased by the sputter etching of the TiN surface prior to the W deposition owing to the removal of contaminants and the increase of the surface roughness. The adhesion of the W film to the TiN glue layer property was also improved by Ar ion implantation of the TiN surface owing to the activation of the TiN surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.1990-1994
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• 2013

A novel multi-cationic borane, tri-N-methylpyridinium substituted triarylborane, $[BAr^N_3]I_3$ ($[2]I_3$) ($Ar^N=4-(4-C_5H_4N-Me)-2,6-Me_2-C_6H_2$) was prepared from the corresponding neutral tris-pyridyl borane, $BAr_3$ (2a) ($Ar=4-(4-C_5H_4N)-2,6-Me_2-C_6H_2$). The crystal structure of 2a determined by X-ray diffraction study reveals the presence of tri-coordinate boron center with peripheral pyridyl moieties. The fluoride ion affinity of the cationic borane, $[2]I_3$ was investigated by UV-vis absorption titrations and was compared with that of neutral 2a. While 2a binds fluoride with the binding constant of $1.9{\times}10^2\;M^{-1}$ in $THF/H_2O$ (9:1 v/v) mixture, $[2]I_3$ shows a very high binding constant ($K=1.0{\times}10^8\;M^{-1}$) that is greater by six orders of magnitude than that of 2a in the same medium. This result indicates that the fluorophilicity of triarylborane can be drastically enhanced by multiple pyridinium substitutions.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.1
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• pp.5-9
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• 2004

In this paper, pulsed discharge is used to control the luminous color in gas discharge tubes. The luminous color of the positive column in gas discharge tubes filled with Hg-Ar-Ne (1: 9, 60［Torr］) and having no phosphor material, varies from red to blue emitted by the Ne and Hg from the pulsed discharge. With changing of pulse-width and frequency, the electron temperature in the transient period affects changes to the residual ion and metastable atom densities. The first metastable atoms containing energy levels of about 16.6 ［eV］have a very high probability that a collision will result in the ionization potential of Ar being 15.8 [eV]. The change of locus in the CIE chromaticity diagram with increasing pulse-width and frequency approves the variation of luminous color.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.605-608
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• 2008

The preparation and characteristics of flexible indium tin oxide electrodes grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll sputtering system for use in flexible optoelectronics In spite of low a PET substrate temperature, we can obtain the flexible electrode with a sheet resistance of 47.4 ohm/square and an average optical transmittance of 83.46 % in the green region of 500~550 nm wavelength. Both x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analysis results showed that all flexible ITO electrodes grown on the PET substrate were an amorphous structure with a very smooth and featureless surface, regardless of the Ar/$O_2$ flow ratio due to the low substrate temperature, which is maintained by a cooling drum. In addition, the flexible ITO electrode grown on the Ar ion beam treated PET substrates showed more stable mechanical properties than the flexible ITO electrode grown on the wet cleaned PET substrate, due to an increased adhesion between the flexible ITO and the PET substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.233-233
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• 2014

InGaZnO 박막트랜지스터(TFT)는 기존의 널리 사용되던 비정질 실리콘보다 높은 전하이동도와 Ion/off, 우수한 균일성과 신뢰성의 장점으로 최근 AMOLED양산에 적용되기 시작 하였다. 그러나 60인치 이상의 대면적 디스플레이와 초고해상도의 성능을 동시에 만족하기 위해 10 cm2/Vs정도의 전하이동도를 가지는 InGaZnO로는 한계가 있어 30 cm2/Vs 이상의 전하이동도를 가지는 물질의 연구가 필요하다. 연구에서는 높은 전하이동도를 만족하기 위해 InO2를, 우수한 신뢰성을 가지는 SnO2를 포함하는 InZnSnO로 실험을 진행하였다. 스퍼터링 시스템에서 ITO 타겟과 ZTO 타겟을 사용하여 동시증착법으로 채널을 증착하였고, 산소 분압 변화시에 IZTO TFT 소자 특성의 의존성을 평가하였다. Ar : O2=10 : 0 일 때와 Ar : O2=7 : 3 일 때의 이동도가 각각 12.6cm2/Vs, 19.7cm2/Vs로 산소 비율이 증가함에 따라 전하이동도가 증가하였다. 기존 IGZO 산화물 반도체에서는 산소 비율이 증가하면 산소공공(VO) 농도감소로 인해 전하이동도가 감소한다. 이는 전하농도가 증가하면 전하이동도가 증가하는 percolation 전도기구로 이해할 수 있다. 그러나 본 IZTO 물질에서는 산소비율 증가에 따라 오히려 전하이동도가 증가하였는데, 이는 IZTO 반도체에 함유된 Sn 이온의 가전자상태가 +2/+4가의 상대적 비율이 산소농도에 따라 의존하기 때문인 것으로 분석되었다.

• Mass Spectrometry Letters
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• v.2 no.2
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• pp.41-44
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• 2011

Molecular compositions of two types of heavy oil were studied using positive atmospheric pressure photoionization (APPI) Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS). Vacuum gas oil (VGO) was generated from vacuum distillation of atmospheric residual oil (AR), and slurry oil (SLO) was generated from catalytic cracking of AR. These heavy oils have similar boiling point ranges in the range of 210-$650^{\circ}C$, but they showed different mass ranges and double-bond equivalent (DBE) distributions. Using DBE and carbon number distributions, aromatic ring distributions, and the extent of alkyl side chains were estimated. In addition to the main aromatic hydrocarbon compounds, those containing sulfur, nitrogen, and oxygen heteroatoms were identified using simple sample preparation and ultra-high mass resolution FT-ICR MS analysis. VGO is primarily composed of mono- and di-aromatic hydrocarbons as well as sulfur-containing hydrocarbons, whereas SLO contained mainly polyaromatic hydrocarbons and sulfur-containing hydrocarbons. Both heavy oils contain polyaromatic nitrogen components. SLO inludes shorter aromatic alkyl side chains than VGO. This study demonstrates that APPI FT-ICR MS is useful for molecular composition characterization of petroleum heavy oils obtained from different refining processes.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.162-167
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• 1992

Tic and TiN layers were deposited on the stainless steel substrate by the reactive RF sputtering. Ar was used for sputtering gas and CzHz and Nz were used for reaction gas. Deposition rate increased linearly to the applied RF power, and decreased as the partial pressure ratio of sputter gas to reactive gas increased. The thin layers were stoichiometric at the partial pressure ratio of 0.03 for Tic and at partial pressure ratio of 0.05 for TiN. The morphologies and structures of the thin layers were investigated by AES, SEM and TEM. In addition, N+ ion was implanted to Tic and the resulting influence on the film and annealing effects were also examined.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.297-309
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• 1995

본 연구에서는 이온선보조증착법에 의해 Si(100)기판위에 정합성장된 $Si_{0.5}$Ge_{0.5}$층의 핵성성과 성장을 고찰하였다. 성장층에 대한 AFM(Atomic Force Microscopy), RHEED(Reflection High Energy Electron diffraction) 등의 분석결과 Si(100)기판위에 이온선보조증착에 의하여 성장된 $Si_{0.5}$Ge_{0.5}$층은 Stranski-Kranstanov(SK)기구로 성장되며, 300eV, 10 $\mu$A/$cm^{2}$의 Ar이온선을 조사시키는 경우 결정성이 향상되었고, SK 성장 방식의 임계두께가 증가하였다. Ar 이온선 조사에 의해 MBE에 의한 정합성장온도(55$0^{\circ}C$-$600^{\circ}C$)보다 훨씬 낮은 20$0^{\circ}C$에서 정합성장이 가능하였으며, $x_{mn}$값은 10.5%로 MBE에 의한 정합성장시 보고된 $x_{mn}$ 값보다 낮았다. 이온충돌에 의해 발생한 3차원 island의 분해와 표면확산의 증가가 $Si_{0.5}$Ge_{0.5}$층의 성장에 현저한 영향을 미쳤으며, 이온충돌의 영향은 3차원 island의 생성보다 3차원 island의 분해가 더 안정한 낮은 증착온도에서만 관찰되었다.