• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.154-154
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• 1999

금속산화막은 전자부품 및 광학적 응용에 널리 사용되고 있다. 특히 알루미늄의 산화막은 유전체의 재료로 커패시터에 많이 사용되고 있다. 이러한 알루미늄 산화막을 plasma를 이용한 ion plating에 의해 형성하였다.Activated Reactive Evaporation은 화합물의 증착율을 높이는데 좋은 증착법이다. 이러한 증착법에는 reactive ion plating와 ion-assisted deposition 그리고 ion beam sputtering 등이 있다. 본 연구에서는 알루미늄 산화막을 증착시키기 위해 plasma를 이용한 electron-beam법을 사용하였다. Turbo molecular pump로 챔버 내의 진공을 약 10-7torr까지 낸린 후 5$\times$10-5torr까지 O2와 Ar을 주입시켰다. 각 기체의 분압은 RGA(residual gas analyzer)로 조사하여 일정하게 유지시켰다. plasma를 발생시키기 위해 filament에서 열전자를 방출시키고 1kV 정도의 electrode에 의해 가속시켜 이들 기체들과 반응시켜 plasma를 발생시켰다. 금속 알루미늄을 5kV정도의 고전압과 90mA의 전류로 electron beam에 의해 증발시켰다. 기판의 흡착율을 높ㅇ기 위해 기판에 500V로 bias 전압을 걸어 주었다. 증발된 금속 알루미늄 증기들이 plasmaso의 산소 이온들과 활성 반응을 이루어 알루미늄 기판 위에 Al2O3막을 형성하였다. 알루미늄 산화막을 분석하기 위해 XPS(X-ray Photoelectron Spectroscopy)로 화학적 조성을 조사하였는데, 알루미늄의 2p전자의 binding energy가 76.5eV로 측정되었다. 이는 대부분 증착된 알루미늄이 산소 이온과 반응하여 Al2O3로 형성된 것이다. SEM(Scanning electron Microscopy)과 AFM(Atomim Force microscopy)으로 증착박 표면의 topology와 roughness를 관찰하였다. grain의 크기는 10nm에서 150nm이었고 증착막의 roughness는 4.2nm이었다. 그리고 이 산화막에 전극을 형성하여 유전 상수와 손실률 등을 측정하였다. 이와 같이 plasma를 이용한 3-beam에 의한 증착은 금속의 산화막을 얻는데 유용한 기술로 광학 재료 및 유전 재료의 개발 및 연구에 많이 사용될 것으로 기대된다.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.

• The Journal of Korean Academy of Prosthodontics
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• v.29 no.2
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• pp.245-265
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• 1991

The purpose of this study was to observe the changes of the elemental transmission and bond strength between the metal and porcelain according to various kinds of ion beam mixing method. ion beam mixing of $meta1/SiO_2$ (silica), $meta1/Al_2O_3$(alumina) interfaces causes reactions when the $Ar^+$ was implanted into bilayer thin films using a 100KeV accelerator which was designed and constructed for this study. A vacuum evaporator used in the $10^{-5}-10^{-6}$ Torr vacuum states for the evaporation. For this study, three kinds of porcelain metal selected, -precious, semiprecious, and non-precious. Silica and alumina were deposited to the metal by the vacuum evaporator, separately. One group was treated by two kinds of dose of the ion beam mixing $(1\times10^{16}ions/cm^2,\;5\times10^{15}ions/cm^2)$, and the other group was not mixed, and analyzed the effects of ion beam mixing. The analyses of bond strength, elemental transmissions were performed by the electron spectroscopy of chemical analysis (ESCA), light and scanning electron microscope, scratch test, and micro Vickers hardness tests. The finding led to the following conclusions. 1. In the scanning electron and light microscopic views, ion beam mixed specimens showed the ion beam mixed indentation. 2. In the micro Vickers hardness and scratch tests, ion beam mixed specimens showed higher strength than that of non mixed specimens, however, nonprecious metal showed a little change in the bond strength between mixed and non mixed specimens. 3. In the scratch test, ion beam mixed specimens showed higher shear strength than that of non treated specimens at the precious and semiprecious groups. 4. In the ESCA analysis, Au-O and Au-Si compounds were formed and transmission of the Au peak was found ion beam mixed $SiO_2/Au$ specimen, simultaneously, in the higher and lower bonded areas, and ion beam mixed $SiO_2/Ni-Cr$ specimen, oxygen, that was transmitted from $SiO_2\;to\;SiO_2/Ni-Cr$ interface combined with 12% of Ni at the interface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.359-365
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• 1997

$K_2CoCl_4$, single crystals were grown by the Czochralski method in Ar atmosphere. The thermal hysteresis of the dielectric constant at $T_c$ was investigated. $K_2CoCl_4$ crystal shows ionic hopping mechanism due to $K^+$ ion and the activation energy is nearly 0.62 eV. Thermal expansions along a-, b-, and c-axis of $K_2CoCl_4$, were measured on heating and the thermal expansion coefficients in each phase were calculated. From the result of the optical absorption measurement, we interpreted the absorption peak as transition energy between the splitted energy levels of the Co ion in the crystal field and it showed the possibility of the application to the optical band filter between 800 nm and 1200 nm.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.37-43
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• 2001

Polyvinylidenefluoride and Polytetrafluoroethylene have been irradiated by 1 keV Ar+ ion beam in an $O_2$ environment. Hydrophilic functional groups (such as -(C-O)-,-(C=O)-,-(C=O)-O- and so on) were formed on fluoropolymers. Contact angles of water to PVDF were reduced from $75^{\circ}$ to $31^{\circ}$. Re-increase of contact angle was originated from carbonization phase in case of high dose irradiation above $1{\times}10^{16} Ar^+cm^2$. Contact angles to PTFE decreased at low dose irradiation and were exaggerated to about $140^{\circ}$ due to cone type surface at high dose irradiation. Hydrophilic functional groups have played an important role on adhesion between metal and fluoropolymers by acid-base interaction and chemical bond formation. Adhesion of Pt/PVDF was enhanced by acid-base interaction because Pt is inert metal. Chemical bond formation between Cu and PTFE could enlarge the adhesion strength of Cu/PTFE.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.21-26
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• 2004

Results from PL and Raman spectroscopic analyses of HPHT (high-pressure high-temperature) treated type IIa diamonds are presented, and these spectral characteristics are compared with those of untreated diamonds of similar color and type. We identify a number of significant changes by 325 nm He/Cd laser excitation. Several peaks are removed completely, including H4, H3 system in HPHT treated diamond. The N3 system, however, increased in emission. Also we can find the behaviour of the nitrogen-vacancy related center N-V centers at 575 and 637.1 nm, as observed with 514 nm Ar ion laser excitation. When these centers are present, the FWHM (full width at half maximum) of 637.1 nm luminescence intensities offers a potential means of separating HPHT-treated from untreated type IIa diamonds. The width of 637.1 nm $(N-V)^-$line measured at the position oi half the peak's height are determine to range from 19.8 to $32.1cm^{-1}$ for HPHT treated diamonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.75-82
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• 1999

Ion energy is one of the crucial property in thin film deposition by internal ICP assisted I-PVD. As ion energy is determined by the difference between the plasma potential and the substrate bias potential, ICP excitation frequency was tested with medium frequency of 4 MHz and two types of tuning circuits, alternate and floating LC network with a biasing resistor, were tested. The results showed that plasma potential was less than 5 V in a range of Ar pressures, 5mTorr to 30 mTorr, at 4 MHz RF 600 W and 60 V of maximum RF antenna voltage was maintained either at RF input or output terminal. By proper control of RLC circuit installed after after RF antenna, 50V of RF induced voltage on RF antenna was obtained at 500W input power. The total impedance of RF antenna and plasma was around 10$\Omega$, and minimum RF voltage was obtained with a condition of lowest reactance at most 0.05$\Omega$.

• Journal of the Society of Naval Architects of Korea
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• v.28 no.2
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• pp.146-158
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• 1991

The flow around a two-dimensional foil section Is measured by a LDV(Laser Doppler Velocimetry) system which is capable of measuring the datailed flow field without interfering the original flow field. A 2-color 3-beam LDV system, which is capable of mea,;tiring 2 velocity components simultaneously and uses 2W Ar-Ion laser source, is used to measure the flow field around an NACA0012 foil section. The measured flow velocities are analysed iii order to study the boundary layer characteristics, flow separation and the detail structure of the flow near the trailing edge of the foil. The boundary layer characteristics are compared with the results by the head's momentum integral method. For the case of small angle of attack at relatively higher Reynolds number, both results show good agreements. The measured data of the velocity field around an NACA0012 foil section would be valuable data to validate the CFD(Computational Fluid Dynamic) calculation results. The developed experimental technique to evaluate the characteristics of two-dimensional foil sections is essential tool to develope new blade sections which have good lift characteristics and better cavitation performances.

• Corrosion Science and Technology
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• v.18 no.5
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• pp.206-211
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• 2019

Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.