• 제목/요약/키워드: $Ar^+$ Ion

검색결과 635건 처리시간 0.024초

충돌제트의 순간 거동 (Transient process of the impinging jet)

  • 한용식;오광철;신현동;김명배
    • 한국연소학회:학술대회논문집
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    • 한국연소학회 2001년도 제22회 KOSCI SYMPOSIUM 논문집
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    • pp.17-22
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    • 2001
  • The flow induced by a circular jet vertically impinging under a horizontal plate is investigated by visualization technique, using kerosene smoke in nitrogen gas to visualize the flow in the vortex as well as under the plate. The light source was the sheet beam of Ar-Ion laser. The vertical and 3-dimensional images of vortices were recorded by the digital video camera.

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p형 GaP 반도체 계면의 광효과 (Photoeffects at p-GaP Semiconductor Interfaces)

  • Chun, Jang-Ho
    • 대한전자공학회논문지
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    • 제26권10호
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    • pp.1528-1534
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    • 1989
  • Photoeffects at the p-GaP semiconductor/CsNO3 electrolyte interface were investigated in terms of their current-voltage characteristics. The photoeffects at the semiconductor-electrolyte interfaces and their photocurrent variations are verified using Ar ion laser and continuous cyclic voltammetric methods. The mechanism of charge transfer at the photogeneration in the depletion layer rather than the photodecomposition of the p-GaP semiconductor electrode surface and/or the water photoelectrolysis. The adsorption of Cs+ ions at the interface is physical adsorption.

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Deposition of copper oxide by reactive magnetron sputtering

  • 이준호;이치영;이재갑
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.49.2-49.2
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    • 2010
  • Copper oxide films have been deposited on silicon substrates by direct current magnetron sputtering of Cu in O2 / Ar gas mixtures. The target oxidation occurring as a result of either adsorption or ion-plating of reactive gases to the target has a direct effect on the discharge current and the resulting composition of the deposited films. The kinetic model which relates the target oxidation to the discharge current was proposed, showing the one-to-one relationship between discharge current characteristics and film stoichiometry of the deposited films.

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ICP system에서 공정가스와 압력에 따른 z축 방향의 이온포화 전류밀도 변화 분석 (Analysis of z-axis direction of the ion saturation current to the pressure of the process gas in the ICP system)

  • 김동훈;주정훈;김성봉
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 추계학술대회 논문집
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    • pp.280-280
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    • 2015
  • 플라즈마 진단법 중 내부에 삽입하여 측정하는 단일 랭뮤어 탐침법은 플라즈마 특성을 정확하게 측정할 수 있다. 탐침에 (-)극을 걸어서 들어오는 전류를 통해서 이온포화 전류밀도를 측정할 수 있다. 본 연구에서는 유도결합플라즈마에 흐르는 가스와 압력에 따라서 변화를 확인하였다. $H_2$, Ar, $CF_4$ gas로 10 mTorr, 70 mTorr, $CF_4$ 주입위치의 조건으로 플라즈마 밀도를 구하였다.

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그래핀 표면처리를 통한 high-k dielectrics 증착

  • 김기석;김경남;염근영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2014년도 추계학술대회 논문집
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    • pp.11-11
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    • 2014
  • CVD 로 성장된 그래핀 표면위에 transfer 와 lithography 공정에서 잔류하게 되는 PMMA residue 는 mobility 의 감소와 high-k dielectrics 의 증착을 방해하는 결정적인 요인이다. 우리는 최적화 되어진 Ar ion beam 을 통해 PMMA residue 를 damage 없이 효과적으로 제거하였고, 손쉽게 high-k dielectrics 를 uniform 하게 증착할 수 있었다.

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Molecular Aspects of Some Photobiological Receptors

  • Song, Pill-Soon
    • Applied Biological Chemistry
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    • 제20권1호
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    • pp.10-25
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    • 1977
  • The photobiological receptors of phototactic, phototropic, and photomorphogenic responses of various organisms have been described in terms of spectroscopic, photophysical and photochemical properties which may be relevant in elucidating the energy transduct ion mechanism(s) in photobiology. The photoreceptors discussed include carotenoids, flavins, stentorin and phytochrome. Although the molecular modes of their photobiological action still remain largely unexplained, it is possible to suggest several primary molecul ar processes of the photoreceptors in eliciting responses of various organisms to light.

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(Al, Ga)As 와 (Cd, Mn)Te의 복합화합물 반도체표면에서의 자연 산화물의 형성 (Native Oxide Formations on (Al, Ga) As and (Cd, Mn)Te surfaces)

  • 최성수
    • 한국진공학회지
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    • 제5권1호
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    • pp.6-13
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    • 1996
  • The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.

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