• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.533-538
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• 2003

It has been shown that ion implantation produces remarkable improvements in surface-sensitive physical and chemical properties as well as other mechanical properties, in polymers. In this study, ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate surface hydrophilic property through contact angle measurement using distilled water. PC was irradiated with N, Ar, Xe ions at the irradiation energy of $20\;{\sim}\;50keV$ and the dose range of $5{\times}10^{15},\;1{\times}10^{16},\;7{\times}10^{16}\;ions/cm^2$. The contact angle of water has been reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural property are discussed in view of infrared spectroscopy and FT-IR, XPS, which shows increasing C-O bonding and C-C bonding. The root mean square of surface roughness examined by means of AFM changed smoothly from 0.387nm to 0.207nm and the change of wettability was discussed with respect to elastic and inelastic collisions obtained as results of TRIM simulation. It was found that wettability of the modified PC surface was affected on change of functional group and nuclear stopping or linear energy transfer(LET, energy deposited per unit track length per ion) that causes chain scission by displacing atom from polymer chains, but was not greatly dependant on surface morphology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1927-1929
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• 2004

현재 널리 쓰이는 고밀도 플라즈마 장치의 식각 시뮬레이션은 식각 패턴으로는 level set method이며 바이어스가 인가된 sheath model로는 Riley sheath model 이 보편적으로 받아들여지고 있다. 이러한 식각 시뮬레이션은 RF(Radio Frequency) sheath로부터 가속된 이온이 단위 입체각당 특정 지점에 이온 플럭스 분포함수, 이온 에너지 분포함수와, 중성종의 수송모델로 etch rate을 결정하는 과정과 level set method을 이용하여 식각 형태를 계산하는 과정으로 구성되어있다. 본 연구는 식각 형태 계산 이전의 단계로서 $Ar^+,\;Cl_2{^+},\;Cl^+$이온의 유동속도와 밀도를 장치의 radial방향으로 불균일하게 가정하였고, 가정한 값으로 이온 플럭스와 에너지 플럭스에 대한 영향을 알아보았다.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2002년도 춘계학술발표대회 논문집
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• pp.192-194
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• 2002

We investigated the surface treatment of spectra fibers to improve tensile properties of spectra/vinylester composites. The spectra fibers were surface-treated using $\textrm{Ar}^{+}$ ion beam under oxygen environment. The treatment effect of spectra fibers on the tensile properties of spectra/vinylester composites was determined comparing the residual strength of surface-treated spectra/vinylester composites with that of untreated spectra/vinylester composites. It was found that the residual strength was improved 15% by the surface treatment of spectra fibers.

• 한국진공학회지
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• 제5권3호
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• pp.263-267
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• 1996

Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.109-110
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• 2000

Sputtering yield of MgO film in the AC-PDPs has been calculated by Monte Carlo simulation of ion scattering. In the ion energy range less than 50 eV, the sputtering yield is 4 ${\times}$ $10^{-4}$ for Xe ions and it is between 0.1 and 0.01 for He, Ne, and Ar ions. The erosion rate is estimated about $25{\AA}$ per hour for Xe ions in an actual PDP plasma for sustain and full white mode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.319-323
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• 1988

For finding the effects of As on $TiSi_2$ formation, sputter deposited Ti film on Si substrates implanted with various doses of As have been rapid thermal annealed in Ar atmosphere at temperatures of 600-900$^{\circ}C$ for 20 sec. The sheet resistance of Ti-Silicides was examined with 4-point probe, the thickness with ${\alpha}$-step, and the As dopant behavior in Si substrates with ASR. The thickness of Ti-Silicides decreased with increasing As doping, but Ti-Silicides sheet resistance increased with increasing it. However, the critical concentration effect reported by Park et al. was not observed. We observed that the thickness of native oxide increase with increasing As doping. Thus, we concluded that native oxide act as a "barrier" for the Si diffusion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.133-135
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• 2006

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

• 한국진공학회지
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• 제7권s1호
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• pp.118-122
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• 1998

$Al_2O_x$(0$Al_2O_3$ gradient coatings were formed by evaporating pure aluminium(99.9%) in $O_2$ environment with an IBAD facility, 12keV $Ar^+$ was used to irradiate the coatings simultaneously during the deposition. Sample's composition and depth profile were analysed by RBS and AES measurement, and their microhardness and porosity property were also measured in the experiment. Results show that, the oxygen concentration in the deposited coatings has a nearly linear relationship with the inputting gas flow before $O_2$ partial pressure in the target chamber reaches $1.2\times10^{-3}$ mbar under which stoichiometric $Al_2O_3$ could be formed; and sample's microhardness and porosity property is affected significantly by the oxygen concentration in the coatings.

• 전자공학회논문지A
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• 제30A권6호
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• pp.1-7
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• 1993

After the 1%S-Al metal is deposited, a thin oxide is formed thereon. Then, a single charged Argon(Ar$^{+}$) is ion implanted into the oxide layer, thereby causing the metal grain in the upper surface of the metal layer to become amorphous. Consequently, the grain size will be reduced and the rough surface of the metal layer flattened. However, the remainder of the metal layer beneath the upper surface thereof will still exhibit large grain size and low resistance, because the Argon ion is only implanted to characterized by a dual-sized grain structure which served to reduce interlayer stress, thereby decreasing the rate of stress migration, and to lower the resistivity of the metal line, thereby enhancing the electromigration characteristic thereof. Experiments have shown that the metal line exhibits a metal migration rate which is approximately 700% less than the control group and a standard deviation which is approximately 200% less than these group.p.

• 한국세라믹학회지
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• 제37권11호
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• pp.1025-1032
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• 2000

산화분위기에서의 반응성 이온빔 스퍼터링법으로 Sn과 Sb 금속 타겟을 사용하여 실온에서 ATO 박막을 증착하였다. Sb 첨가량, 박막의 두께 및 열처리가 ATO 박막의 전기적 특성과 광학적 특성에 미치는 효과를 연구하고자 하였다. 제조된 ATO 박막의 두께는 약 1500$\AA$과 1000$\AA$으로 조절하였으며, Sb 농도는 10.8wt% 또는 14.9wt%임이 XPS 분석에 의하여 확인되었다. 증착한 박막의 열처리는 40$0^{\circ}C$~$600^{\circ}C$의 온도범위에서 산소 또는 forming gas(10% H$_2$-90% Ar) 분위기에서 30분간 수행하였다. 이렇게 제조된 ATO 박막은 Sb의 첨가량, 두께 및 열처리 조건에 따라 다양한 전기 비저항 값과 가시광선 대역에서의 광투과도를 나타내었다.