• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• 한국재료학회지
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• 제2권6호
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• pp.443-451
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• 1992

반응성 스팟터법에 의하여 형성된 TiN막 표면상에 CVD 텅스텐막을 증착할 때 여러가지 전처리 실시에 따른 텅스덴의 핵 생성 양상의 변화를 비교 조사하였다. 먼저 Ar rf 스팟터에칭 전처리는 에칭 두께가 200A 이상일 때에는 잠복기와 증착속도를 증가시킨다. Ar 이온주입 전처리는 잠복기를 증가시켜 텅스텐의 핵 생성에는 불리한 효과를 나타내는 반면, 증착속도는 증가시킨다. 또한 Si$H_4$flushing 전처리는 TiN막 표면에서의 Si의 흡착을 용이하게 함으로써 잠복기를 약간 감소시키는 효과를 나타낸다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.814-818
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• 2016

DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.468-470
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• 1999

One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권5호
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• pp.211-215
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• 2001

SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.46-50
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• 2005

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

• 한국표면공학회지
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• 제31권5호
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• pp.251-260
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• 1998

Stainless Steel is being used widely for various purposes due to its good corrosion resistance. There have been many researches to produce colored stainless steel by several methods such as anodizing and ion-plating. In this experiment, we $Ti_XN$(C,O) on the films SUS304, aluminium, and glass substrates with DC magentron sputterinng system made by Leybold Hereus, and strdied the structur, corrsion and pit characture of the TiXN observed by TeM image was black and whink and white columnar hed a very fine(200$\AA$) dense sturcture,and the diffraction resistance at the $3{\times}10_6A/\textrm{cm}^2$ and $10_{10}\times{cm}^2$current density were obtained in the under-stoichiometry $Ti_xN$ compound of Ar/$N_2$(Ar:$N_2$=100:6, titanium-rich compound) and the over-stoichiometry compound of Ar/$N_2$((Ar:$N_2$=60:15) respectively. When the thiness was over 1.64$\mu\textrm{m}$, good pit resistance could be obtained and its improvement was especially affected by perfect surfaceface. Typical TiN anodic polarzation curves of very unstable corrosion were observed by $Ti_xN$ film on the glass and perfect film of 3.28$\mu\textrm{m}$ thickness.

• 한국표면공학회지
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• 제52권2호
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• pp.84-89
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• 2019

We fabricated durable anti-reflective(AR) layer with silica globular coating on polymer by two steps. Firstly, nano-protrusions of polymer were formed by plasma etching known as R.I.E(reactive ion etching) process. Secondly, silica globular coating was deposited on polymer nano-protrusions for mechanically protective and optically enhancing AR layers by RF magnetron sputter. And then durable antireflective polymers were synthesized adjusting plasma power and time, working pressures of RIE and RF sputtering processes. Consequently, we acquired the average transmission (94.10%) in the visible spectral range 400-800 nm and the durability of AR layer was verified to sustain its transmission until 5,000 numbers by rubber test at a load of 500 gf.

• 한국산학기술학회논문지
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• 제19권10호
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• pp.1-7
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• 2018

이산화주석은 리튬 이온 전지의 Anode 전극물질, 또는 $H_2$, NO, $NO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 이용하여 가스센서로 활용되고 있으며, 나노구조를 갖는 이산화주석의 합성과 관련하여 많은 연구가 활발하게 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체분자의 흡착확률을 높일 수 있으므로 고감도 가스 센서의 구현이 가능하고, Li-ion 이차전지의 경우에도 비정전용량을 향상시킬 수 있다. 본 연구에서는 열화학기상증착 장비를 이용하여 기상수송방법으로 $SnO_2$ 나노구조물을 Si 기판 위에 직접 성장시켰다. 이때 이송가스로 이용되는 고순도 Ar 가스에 고순도 산소가스를 혼합하였고, 산소가스의 혼합량에 따라 다른 형태의 산화주석 나노구조물이 성장되는 것을 확인하였다. 기상수송방법으로 성장된 산화주석 나노구조물의 결정학적 특성은 Raman 분광학 및 XRD 분석을 통하여 확인하였고, 표면형상을 주사전자현미경을 통하여 확인하였다. 분석결과 산화주석 나노구조물은 산소가스 혼합량에 민감하게 영향을 받았으며, 이송가스로 이용되는 고순도 Ar 1000 SCCM에 고순도 산소가스 10 SCCM을 혼합하였을 때, 적당한 두께를 가지면서 Nanodots 형태의 표면형상을 갖는 $SnO_2$ 결정상의 나노구조물이 성장되는 것을 확인하였다.