• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.91-91
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.68-68
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.177-177
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• 2002

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.4
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• pp.24-31
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• 2005

A plused laser ablation deposition(PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore this paper was focused on the understanding of plume motion in laser ablation assisted by hi plasmas at 100[mTorr]. One-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom(C), $ion(C^+)$ and electron were considered in the calculation of particle method. It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field(E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active. The energies of plume particles were investigated on a substrate surface. In addition the plume motion in Ar gas was also calculated and discussed.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.31-36
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• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.361-365
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• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.238-239
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• 2011

최근 반도체 산업은 더 높은 성능의 회로 제작을 통해 초고집적화를 추구하고 있다. 이를 위해서 회로 설계의 최소 선폭과 소자 크기는 지속적으로 감소하고 있고 이를 위한 배선 기술들은 플라즈마 공정을 이용한 식각공정에 크게 의존하고 있다. 식각공정에 있어서 반응가스의 조성은 식각 속도와 선택도를 결정하는 중요한 요소이다. 본 연구에서는 CIS QMS (closed ion source quadrupole mass spectrometer)를 이용하여 CF4+Ar를 이용한 실리콘 산화막의 플라즈마 식각 공정 시 생성되는 라디칼과 이온 종들을 측정하였다. Ar 이온이 기판표면과 충돌하여 기판물질간의 결합을 깨놓으면, 반응성 기체 및 라디칼과의 반응성이 커져서 식각 속도를 향상 시키게 된다. 본 실험에서는 2 MHz의 RPS (remote plasma source)를 이용하여 플라즈마를 발생시키고 13.56 MHz의 rf 전력을 기판에 인가하여 식각할 웨이퍼에 바이어스 전압을 유도하였다. CF4/(CF4+Ar)의 가스 혼합비가 커질수록 식각 부산물인 SiF3의 양은 증가 하였으며, CF4 혼합비가 0일 때(Ar 100%) 비하여 1일 때(CF4 100%) SiF3의 QMS 이온 전류는 106배 증가하였다. 이때의 Si와 결합하여 SiF3를 형성하는 F라디칼의 소모는 0.5배로 감소하였다. 또한 RPS power가 800 W일 때 플라즈마에 의해서 CF4는 CF3, CF2, CF로 해리 되며 SiO2 식각 시 라디칼의 직접적인 식각과 Si_F2의 흡착에 관여되는 F라디칼의 양은 CF3 대비 7%로 검출되었고, 식각 부산물인 SiF3는 13%로 측정되었다. Ar의 혼합비를 0 %에서 100%까지 증가시켜 가면서 측정한 결과 F/CF3는 $1.0{\times}105$에서 $2.8{\times}102$로 변화하였다. SiF3/CF3는 1.8에서 6.3으로 증가하여 Ar을 25% 이상 혼합하는 것은 이온 충돌 효과에 의한 식각 속도의 증진 기대와는 반대로 작용하는 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.190-194
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• 2002

In this study, the etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties were measured as the CF4 adds from 0 % to 30 % to the Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. Other parameters were fixed at a rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Au peaks are changed. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point and the etching products can be sputtered by Ar ion bombardment. We obtained the cleaned and steep profile.