• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.98-100
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2$/Ar mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.212-212
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• 2010

최근 차세대 반도체 메모리 소자로 대두된 magnetic random access memory(MRAM)에 대한 연구가 활발히 진행되고 있다. 특히 MRAM의 magnetic tunnel junction(MTJ) stack을 구성하는 자성 재료의 건식 식각에 대한 연구에서는 좋은 profile을 얻고, 재층착의 문제를 해결하기 위한 노력이 계속해서 진행되고 있다. 본 연구에서는 photoresist(PR)과 Ti 하드 마스크로 패턴 된 배리어(barrier) 층인 MgO 박막의 식각 특성을 유도결합 플라즈마를 이용한 고밀도 반응성 이온 식각(inductively coupled plasma reactive ion etching-ICPRIE)을 통해서 연구하였다. PR 및 Ti 마스크를 이용한 자성 박막들은 HBr/Ar, HBr/$O_2$/Ar 식각 가스의 농도를 변화시키면서 식각되었다. HBr/Ar 가스를 이용 식각함에 있어서 좋은 식각 조건을 얻기 위한 parameter로서 pressure, bias voltage, rf power를 변화시켰다. 각 조건에서 Ti 하드마스크에 대한 터널 배리어층인 MgO 박막에 selectivity를 조사하였고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.1
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• pp.52-59
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• 2004

Recently, many researches for fine particles plasma have been focused on the fabrication of the new devices and materials in micro-electronic industry, although reduction or elimination of fine particles was interested in plasma processing until now on. In order to enhance their utilization, it is necessary to control and analyze fine particle behavior. Therefore, we developed simulation model of fine particles in RF Ar plasmas. This model consists of the calculation parts of plasma structure using a two-dimensional fluid model and of fine particle behavior. The motion of fine particles was derived from the charge amount on the fine particles and forces applied to them. In this paper, Ar plasma properties using two-dimensional fluid model without fine particles were calculated at power source voltage 15[V] and pressure 0.5[Torr]. Time-averaged spatial distributions of Ar plasma were shown. The process on the formation of Coulomb crystal of fine particles was investigated and it was explained by combination of ion drag and electrostatic forces. And also analysis on the forces of fine particles was presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1091-1096
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• 2003

Ion implantation in polymeric materials can induce dramatic chemical modifications, such as bond breaking, cross linking, formation of new chemical products, which have strong influences on the macroscopic properties of the materials. In this study ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate change of the optical transmittance property focusing ultraviolet ray range(200-400nm). PC was irradiated with N, Ar, Kr, Xe ions at the ion energy of 50keV and the dose range of 5 ${\times}$ 10$\^$15/, 1 ${\times}$ 10$\^$16/, 7${\times}$10$\^$16/ ions/$\textrm{cm}^2$. FT-IR, XPS, UV/Vis transmittance spectroscopy measurement technologies were employed to obtain chemical. structural properties and optical transmittance of irradiated polymer. The original PC(unimplanted) is quite transparent that it has more than 88% transmittance in the range UV-A(320∼400nm), but after ion implantation, surface colors were changed to the dark brown and the transmittance of UV ray decreased for all implantation condition, and the absorption edge was shift to visible range with increasing mass of implanted ion species and dose.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.47-51
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• 2018

We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.1
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• pp.13-16
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• 2003

We implanted $N^+ion$ into TiO$_2$/Ti substrates with 70 keV by varying dose of 0, 2, 5, and $10{\times}10^{17}/cm$^2$$. In addition, $N^+ion$implanted TiO$_2$ specimens were annealed at $600^{\circ}C$ for 2 hours in Atmosphere. We investigated the color evolution, surface roughness, and hardness of specimens with doses. We report that the color changed from white into dark-yellow as dose increased. ion implanted surfaces became smooth when they were annealed. Moreover, hardness increased up to 10% when we annealed ion implanted TiO$_2$. Our results imply that we may enhanced titanium color and surface hardness.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.446-451
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• 1999

Surface of Polymethylmethacrylate (PMMA) was modified by ion assisted reaction in which ion beam of Ar or$ O_2$is irradiated on polymer in reaction gas environment. Ion beam energy was changed from 600 to 1000eV, and ion doses were varied from $5\times10^{14} ions/cm^2 to 1\times10^{17} ions/cm^2$. Contact angle and surface energy of modified PMMA were measured by contact angle micrometer using distilled water and formamide. In the case of $Ar^+$ ion irradiation only, the contact angle reduced from $68^{\circ} to $35^{\circ}$ and the surface energy was changed from 46 dyne/cm to 60 dyne/cm. The contact angle significantly decreased to $14^{\circ}$and the surface energy increased to 72 dyne/cm when the surface of PMMA was modified by oxygen ion irradiation in oxygen gas environment. Improvement of wettability results from the formation of new hydrophilic group which is identified as C-O chain by XPS analysis. Recovery of wettability in dry air and maintenance of it in water condition were explained in view of the formation of hydrophilic group.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.430-434
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• 2004

The values of fracture energy and mechanical flexural strength of Fiber Reinforced Cement (FRC) with polypropylene (PP) fiber modified by Ion Assisted Reaction (JAR), by which functional groups were grafted on the surface of PP fiber, was improved about 2 times as those of fracture energy and flexural strength of cement reinforced by untreated PP fiber. PP fiber was irradiated in O$_2$ environment by Ar$\^$+/ ion. The contact angle of PP treated by IAR decreased largely when compared with untreated PP. From this result, we expected that surface energy and interfacial adhesion force of treated PP fiber increased. The strain hardening occurred in the strain-stress curve of FRC including PP treated by IAR when compared with that of FRC with untreated PP. These enhanced mechanical properties might be due to strong interaction between hydrophilic group on modified PP fiber and hydroxyl group in cement matrix. This hydrophilic group on surface modified PP fiber was confirmed by XPS analysis. We clearly observed hydration products that were fixed at modified PP fiber due to the strong adhesion force of interface in cement reinforced modified PP by SEM (Scanning Electron Microscopy) study.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.315-315
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• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.216-216
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• 1999

The usage of a stationary plasma thruster (SPT) ion source, invented previously for space application in Russia, in experiments with surface modifications and film deposition systems is reported here. Plasma in the SPT is formed and accelerated in electric discharge taking place in the crossed axial electric and radial magnetic fields. Brief description of the construction of specific model of SPT used in the experiments is presented. With gas flow rate 39ml/min, ion current distributions at several distances from the source are obtained. These was equal to 1~3 mA/$\textrm{cm}^2$ within an ion beam ejection angle of $\pm$20$^{\circ}$with discharge voltage 160V for Ar as a working gas. Such an extremely high ion current density allows us to obtain the Ti metal films with deposition rate of $\AA$/sec by sputtering of Ti target. It is shown a possibility of using of reactive gases in SPT (O2 and N2) along with high purity inert gases used for cathode to prevent the latter contamination. It is shown the SPT can be operated at the discharge and accelerating boltages up to 600V. The results of presented experiments show high promises of the SPT in sputtering and surface modification systems for deposition of oxide thin films on Si or polymer substrates for semiconductor devices, optical coatings and metal corrosion barrier layers. Also, we have been tried to establish in application of the modeling expertise gained in electric and ionic propulsion to permit numerical simulation of additional processing systems. In this mechanism, it will be compared with conventional DC sputtering for film microstructure, chemical composition and crystallographic considerations.