• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.183-187
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_2$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_3$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_2$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_2$ and 16 % Ar with the $CHF_3$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.145.1-145.1
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• 2014

변형된 end-Hall type의 이온 소스를 사용하여 이온 소스의 형태에 따라 달라지는 이온 빔의 변화를 측정하였다. 이온 소스 cathode의 wehnelt mask를 세 가지 종류로 제작하였으며, 생성된 이온 빔을 이용하여 Al이 sputter 방식으로 증착된 유리 기판을 etching 하였다. 실험 결과 wehnelt mask의 모양에 따라 focus, broad, strate의 형태로 이온 빔이 생성되는 것을 확인하였다. Al이 증착된 유리 기판의 제작을 위하여 Al target을 사용하여 RF power로 150 W, 2분간 sputtering을 하였고, 이온 소스와 기판사이의 거리를 1 cm씩 증가시켜가며 이온 빔을 2,500 V로 3분간 유리 기판을 etching한 후, 유리 기판이 etching된 모양을 통해 이온 빔의 형태를 분석하였다. 본 연구를 위하여 sputtering과 이온 빔 처리가 가능한 챔버를 제작하였으며, scroll pump와 turbo molecular pump를 사용하였다. Base pressure $1.5{\times}10^{-6}Torr$에서 실험이 진행되었고, 불활성 기체 Ar을 사용하였다. Ar 기체를 주입시 pressure는 $2.6{\times}10^{-3}Torr$였다.

• 한국표면공학회지
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• 제32권2호
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• pp.83-92
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• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.103-106
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• 2006

Semiconductor laser diode has a reflective facet in a both-ends side fundamentally. Laser performance for improving, Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing superluminescent diode and reducing the reflection-induced intensity noise of laser diode, it's key techniques are AR/HR coatings. In the study AR coating film were manufactured by Ion-Assisted Deposition(IAD) system. Then manufactured coating film measurement electrical properties(L-I-V, Se, Resistor) and Optical properties (wavelength FFP)

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• Bulletin of the Korean Chemical Society
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• 제16권2호
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• pp.101-104
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• 1995

In an attempt to understand the nature of hyperthermal ion-surface collisions, noble gas ion beams (He+, Ne+, Ar+, and Xe+) are scattered from a Si(100) surface for collision energies of 20-300 eV and for 45°incidence angle. The scattered ions are mass-analyzed using a quadrupole mass spectrometer and their kinetic energy is measured in a time-of-flight mode. The scattering event for He+ and Ne+ can be approximated as a sequence of quasi-binary collisions with individual Si atoms for high collision energies (Ei > 100 eV), but it becomes of a many-body nature for lower energies, Ar+ and Xe+ ions undergo mutliple large impact parameter collisions with the surface atoms. The effective mass of a surface that these heavy ions experience during the collision increases drastically for low beam energies.

• 한국표면공학회지
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• 제33권2호
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• pp.115-125
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• 2000

TiN films were deposited onto Stellite 6B alloy (Co base) by the reactive magnetron sputter ion plating. As the bias increases, TiN film changes from columnar structure to dense structure with great hardness and smooth surface due to densification and resputtering by ion bombardment. The content of oxygen and carbon impurities in the TiN film decreases greatly when the substrate bias is applied. The preferred orientation of the TiN films changes from (200) to (111) with decreasing $N_2$/Ar ratio, and from (200) to (111) and then (220) with increasing the substrate bias. The change of the preferred orientation is discussed in terms of surface energy and strain energy which are related to the impurity contents and the ion bombardment damage. The hardness of the TiN film increases with increasing compressive stress generated in the film by virtue of ion bombardment. It becomes as high as up to 3500kgf/mm$^2$ when an appropriate substrate bias is applied.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.54-56
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• 2005

QMS를 이용하여 chlorine based 유도결합 플라즈마 내 이온의 거동에 대한 분석을 하였다. 플라즈마 진단 가스로는 AT 가스에 $BCl_3$을 첨가하였으며 공정 압력을 변화하며 플라즈마 특성 변화를 분석하였다. 가스 혼합비에 따른 이온의 상대적인 밀도 변화에서 소량의 Ar가스의 첨가는 $BCl_3$ 가스의 이온화를 도와 $Cl^+$ 이온이 증가하는 현상을 보이며 Ar과 $BCl_3$의 이온화 에너지의 차이로 인해 $BCl_3$ 가스의 첨가비가 적을 수록, RF Power가 증가하며, 공정 압력이 낮올 수록 이중 피크 구조의 이온 에너지 분포를 확인 할 수 있었으며 이는 이온이 접지 전극에의 도달 시간과 평균 플라즈마 전위의 변화 때문이라고 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.197-197
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• 2012

Device 제작에 사용된 graphene은 일반적인 lithography 공정에서 resist residue에 의한 오염을 피할 수 없으며 이로 인하여 graphene의 pristine한 성질을 잃어버린다. 본 연구에서는 graphene을 저밀도의 argon inductively coupled plasma (Ar-ICP)를 통해 처리함으로서 graphene based back-gated field effect transistor (G-FET)의 특성변화를 유도한 결과에 대해서 보고한다. Argon capacitively coupled plasma (Ar-CCP)은 에 노출된 graphene은 강한 ion bombardment energy로 인하여 쉽게 planar C-C ${\pi}$ bonding (bonding energy: 2.7 eV)이 breaking되어 graphene의 defect이 발생되었다. 하지만 우리의 경우 저밀도의 Ar-ICP가 적용될 때 graphene의 defect이 제한되며 이와 동시에 contamination 만을 제거할 수 있었다. 소자의 전기적 측정 (Gsd-Vbg)을 통하여 contamination으로 인하여 p-doping된 graphene은 pristine 상태로 회복되었으며 mobility도 회복됨이 확인되었다. Ar-ICP를 이용한 graphene cleaning 방법은 저온공정, 대면적 공정, 고속공정을 모두 만족시키며 thermal annealing, electrical current annealing을 대체하여 graphene 기반 소자를 생산함에 있어 쉽고 빠르게 적용할 수 있는 강점이 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.450-451
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• 2008

In this paper, we have designed the Anti-Reflection (AR) coating for 850, 1310 nm(multi type) and 1310, 1550 nm(multi type) wavelength ranges on the ferrule facet of special optical connector. The reflectance of the AR coated ferrule facet is designed under 5% for 850, 1310 nm(multi type) and 1310, 1550 nm (multi type). AR thin film was deposited by ion- assisted deposition in low temperature. The average return loss of the AR coated ferrule facet is 47.1 dB.