• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.128-128
• /
• 2012

Korea institute of materials science (KIMS) has researched an anode layer linear ion source (ALIS) for various roll-to-roll treatment processes. The ALIS can be used to Ar ion beam (1~2 keV) treatment, and diamond-like carbon coating and so on. The treatment width of ALIS is 500 mm with a uniformity below 5 % (=(Max-min)/(Max+min)). We also demonstrate the status of development of ALIS in a roll-to-roll industry.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.358-358
• /
• 2010

Ion beam bombardment at low energy forms nanosize patterns such as ripples, dots or wrinkles on the surface of polymers in ambient temperature and pressure. It has been known that the ion beam can alter the polymer surface that induces skins stiffer or the density higher by higher compressive stress or strain energies associated with chain scissions and crosslinks of the polymer. Atomic scale structure evolution in polymers is essential to understand a stress generation mechanism during the ion beam bombardment, which governs the nanoscale surface structure evolution. In this work, Molecular Dynamics (MD) simulations are employed to characterize the phenomenon occurred in bombardment between the ion beam and polymers that forms nanosize patterns. We investigate the structure evolution of Low Density Polyethylene (LDPE) at 300 K as the polymer is bombarded with Argon ions having various kinetic energies ranging from 100 eV to 1 KeV with 50 eV intervals having the fluence of $1.45\;{\times}\;1014 #/cm2$. These simulations use the Reactive Force Field (ReaxFF), which can mimic chemical covalent bonds and includes van der Waals potentials for describing the intermolecular interactions. The results show the details of the structural evolution of LDPE by the low energy Ar ion bombardment. Analyses through kinetic and potential energy, number of crosslinks and chain scissions, level of local densification and motions of atoms support that the residual strain energies on the surface is strongly associated with the number of crosslinks or scissored chains. Also, we could find an optimal Ar ion beam energy to make crosslinks well.

• Korean Journal of Materials Research
• /
• v.10 no.1
• /
• pp.77-82
• /
• 2000

A surface of polytetrafluoroethylene(PTFE) was modified with changing ion doses by 1 keV $Ar^+$ ion irradiation and Cu films having thickness $5000\;{\AA}$ were deposited on the modified PTFE. The SEM study showed that the surface texture of modified PTFE was in the form of cones whose height increased depending on ion doses. Through XPS spectra, it was found that the intensity of F ls peaks decreased with ion doses by preferential sputtering of F atoms and the C-C and / or C-F chains were formed by the crosslinking in the newly unstable chains. Cu films were deposited uniformly along the filaments formed on the modified PTFE. In x-ray diffraction (XRD) spectra of deposited Cu films on modified PTFE, a preferred orientation along (111) and (200) planes was found and the peak intensity of (111) plane increased as surface roughness of modified PTFE increased. The resistivity of Cu films was changed from $2.7{\mu}{\Omega}cm$ of unmodified PTFE to $4.3{\mu}{\Omega}cm$ of modified PTFE at ion dose of $1{\times}10^{16}/\textrm{cm}^2$ and the abrupt increase of resistivity in the modified PTFE at ion dose of $1{\times}10^{17}/\textrm{cm}^2$ was due to being cut off the film which resulted from the increased surface roughness.

• Journal of the Korean Vacuum Society
• /
• v.15 no.6
• /
• pp.581-586
• /
• 2006

We have generated the argon plasma in the diode chamber based on the established coaxial electrode type and investigated the emitted visible light for emission spectroscopy. We applied various voltages $2\sim3.5kV$ to the device by 0.5kV, and obtained the emission spectrum data for the focused plasma in the diode chamber on the argon pressure of 330 mTorr. The Ar I and Ar II emission line are observed. The electron temperature and ion density have been measured by the Boltzmann plot and Saha equation from assumption of local thermodynamic equilibrium (LTE) The Ar I and Ar II ion densities have been calculated to be $\sim10^{15}/cc\;and\;~10^{13}/cc$, respectively, from Saha equation.

• Journal of the Korean Vacuum Society
• /
• v.11 no.3
• /
• pp.176-182
• /
• 2002

Amorphous $TiO_2$ thin films were deposited on glass substrates by ion beam sputtering in which the ratio of $O_2$/Ar gas used as discharged gas was varied from 0 to 2. After optical and microstructure properties and chemical composition of thin films was analyzed, antireflection coating layers were fabricated with $SiO_2$/$TiO_2$ multi-layers. Thin films deposition was performed at room temperature and ion beam voltage and ion current density for sputtering of target were fixed at 1.2 kV and 200 $\mu\textrm{A}/\textrm{cm}^2$, respectively. Refractive indexs of the deposited $TiO_2$films were 2.40-2.45 at a wavelength of 633 nm. $TiO_2$films had high transmission and stoichiometry when ratio of $O_2$/Ar was 1. Rms roughness of deposited $TiO_2$ film was below 7 $\AA$. In excessive $O_2$ environments, however Rms roughness increased over 50 $\AA$. Transmittance decreased by scattering of rough surface. Reflectance of $SiO_2$/$TiO_2$multi-layers was below 1% in visible light.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.7
• /
• pp.382-386
• /
• 2004

A study has been made of surface modification of organic materials by ion implantation to increase the surface electrical properties. The substrate used were PET(polyethylene teraphtalate). N$^{＋}$, Ar$^{＋}$ implantation was peformed at energies of 40 keV and 50 keV with fluences from $5{\times}10^{15}$, $1{\times}10^{16}$,$7{\times}10^{16}$, $1{\times}10^{17}$/ ions/$cm^2$. UV/Vis, FT-IR and XPS spectroscopy measured for surface structure changes. Surface resistance decrease of implanted polymers was affected by ion implantation energy, ion species and ion dose rate. Surface conductivity of PET increased $2{\times}10^{9}$/∼$2{\times}10^{10}$/$\Omega$/sq by ion implantation. Result of various spectroscopy analysis, the cause of increasing PET surface conductivity was expected to breaking C=O bonds. It was formation carbon network structure by promote cross-linking and create C-C, C=C bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.363-363
• /
• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Korean Society for Precision Engineering
• /
• v.28 no.3
• /
• pp.383-388
• /
• 2011

The cold hollow cathode gas ion source is under development for multi aperture focused ion beam (FIB) system. In this paper, we describe the cold hollow cathode ion source design and the general ion source performance using Ar gas. The glow discharge characteristics and the ion beam current density at various operation conditions are investigated. This ion source can generate maximum ion beam current density of approximately 120 mA/$cm^2$ at ion beam potential of 10 kV. In order to effectively transport the energetic ions generated from the ion source to the multi-aperture focused ion beam(FIB) system, the einzel lens system for ion beam focusing is designed and evaluated. The ions ejected from the ion source can be forced to move near parallel to the beam axis by adjusting the potentials of the einzel lenses.

• Journal of the Korean Society of Groundwater Environment
• /
• v.1 no.1
• /
• pp.6-9
• /
• 1994

Previously reported Ar/N$_2$ratios in groundwater have been measured by single ion monitoring (Barnes et al., 1975; Vogel et al., 1981; Mariotti et al., 1988). The detector geometry and flared flight tube in VG Optima isotopic ratio mass spectrometer appeared to be fortuitously aligned for the simultaneous measurement of Ar/N$_2$ratios. Method development included mechanical adjustments to optimize the mass spectrometer for Ar/N$_2$ratio measurements followed by development of a preparation system for the extraction of air-saturated water samples. Samples containing known Ar/N$_2$ratios were used to assess accuracy and precision, and to test the applicability of methods for measurements of aqueous Ar/N$_2$ratios. The results indicated that the prepared air-saturated water samples were almost identical to the predicted Ar/N$_2$ratios (p ＜0.001). Groundwater samples were collected from on-going research sites, Shelton and Grand Island, Nebraska. Samples from the Grand Island sludge injection site form a lower boundary for worldwide reported Ar/N$_2$ratios. These lower Ar/N$_2$ratios can be explained by the production of nitrogen gas from this site, where denitrification was reported previously.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.8
• /
• pp.727-732
• /
• 2008

In this work, the etch characteristics of $VO_2$ thin films were investigated using inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the $VO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the $Cl_2/Ar$ plasma at fixed gas pressure, input power, and bias power resulted in increasing $VO_2$ etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the $VO_2$ films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of $VO_2$ film in the $Cl_2/Ar$ plasma.