• Korean Journal of Optics and Photonics
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• v.6 no.1
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• pp.50-55
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• 1995

We have performed Brillouin light scattering experiments to study the elastic properties of Cr films deposited on soda-lime glasses by using Ar-ion assisted deposition techniques. The elastic constants of the films increased as the ion-current density employed during the film deposition increases and they approached to the values of bulk Cr. The best fit values of the elastic constants of the films manufactured with ion current density of $400\muA/cm^{2}$are $c_{11}=296, c_{13}=83, c_{33}=289$, and $c_{55}=c_{44}=108(\times10^9/N/m^{2}}$ and these are 5% lower than those of bulk Cr in hexagonal symmetry. metry.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.42-46
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• 2005

In microelectronics packaging, the reliability of the metal/polymer interfaces is an important issue because the adhesion strength between dissimilar materials is often inherently poor. The modification of polymer sufaces by ion beam irradiation and rf plasma are commonly used to enhance the adhesion strength of the interface. T-peel strengths were measured using a Cu/polyimide system under varying $Ar^+$ ion beam irradiation pretreatment conditions. The measured T-peel strength showed reversed camel back shape regarding the fixed metal-layer thickness, which was quite different from the results of the $90^{\circ}$ peel test. The elementary analysis suggests that the variation of the T-peel strength is a combined outcome of the plastic bending work of the metal and polymer strips. The results indicate that the peel strength increases with $Ar^+$ ion beam irradiation energy at the fixed metal-layer thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.89-89
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• 1995

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• Journal of the Korean Ceramic Society
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• v.34 no.11
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• pp.1121-1128
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• 1997

In this study, the Ar plasma treatment was used to improve the surface roughness of Poly-Si1-xGex thin film deposited by RTCVD. The surface roughness and the resistivity of Si1-xGex thin film were investigated with variation of Ar plasma treatment parameters (electrode distance, working pressure, time, substrate temperature and R.F power). When the Ar plasma treatment was used, the cluster size decreased by the surface etching effect due to the increasing surface collision energy of particles (ion, neutral atom) in plasma under the conditions of decreasing electrode distance and increasing pressure, time, temperature, and R. F power. Although the surface roughness value decreased by the reduction of the cluster size due to surface etching effect, however, the resistivity increased. This may be due to the surface damage caused by the increasing surface collision energy. It was concluded that the surface roughness could be improved by the Ar plasma treatment, while the resistivity was increased by the surface damage on the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.83-84
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• 2007

$BCl_3$/Ar ICP 플라즈마를 이용한 $ZrO_2$ 박막의 식각 메카니즘이 실험 결과와 모델링을 통해 연구되었다. Ar 가스의 증가에 따라, $ZrO_2$의 식각 속도는 선형 변화의 경향을 보이지 않았고, Ar의 약 30% - 35%에서 41.4nm/min의 최대의 속도를 나타내었다. Langmuir probe 측정과 plasma 모델링 결과로부터, $BCl_3$/Ar 가스 혼합비가 플라즈마 파라미터와 active species의 형성에 큰 영향을 미침을 확인하였다. 한편 surface kinetics 모델링 결과로부터, $ZrO_2$의 식각 속도는 ion-assisted chemical reaction mechanism 에 의해 결정됨을 확인하였다.

• Journal of Korea Foundry Society
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• v.6 no.4
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• pp.284-289
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• 1986

Decarburization phenomena have been studied by plasma in stainless steel, plain carbon steel and cast iron. It was also investigated the movement of impurity element P,S in the plasma jet metal pool. The plasma jet was obtained by $Ar\;-\;CO_2$ gas mixture with 5 kVA DC power source. It produced enough temperature to dissociate into activated oxygen atom by reaction of $CO_2{\leftrightarrows}CO+O^+$ and it reacted with ${\underline{C}}$ in metal pool. Decarburization rate was increased about 5 times in comparing with the conventional induction melted metal pool by $CO_2$ gas decarburization. Even under the Ar plasma jet, decarburization was obtained by agitation of metal bath by $Ar^+$ bombardment and dilution phenomena of carbon atom under the very high plasma temperature. But heavy element P and S are not much removed because they are too heavy in mass to be activated by $Ar^+$ion bombardment. Desulphurization was achieved by $Ar\;-\;CO_2$ plasma in plain carbon steel and cast iron by the reaction of $SO_2({\underline{S}}+O^+)$. But dephosphorization could not be obtained by $Ar\;-\;CO_2$ plasma, because gaseous reaction of phosphorous oxide (${\underline{P}}+O^+$) was not existed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.363-366
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• 2000

In this study, SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched at different Cl$_2$gas mixing ratio in Cl$_2$/Ar. The maximum etch rate of SBT was 883 $\AA$/min in Cl$_2$(20%)/Ar(80%). The result indicates that physical sputtering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the changes of morphology and crystallinity on the near surface of etched SBT, atomic force microscopy (AFM) and x-ray diffraction (XRD) were used. The rms values of etched samples in Ar only or Cl$_2$ only plasma were higher than that of as-deposited, Cl$_2$/Ar Plasma. The SBT (105) crystalinity of the etched samples decreased in Af only or Cla only plasma, but maintain constant in ClyAr plasma. This can be illustrated by a decrease of Bi content or nonvolatile etching products (Sr-Cl and Ta-Cl), resulting in the changes of stoichiometry on the etched surface of the SBT thin films. The decrease of Bi content and nonvolatile etch products were revealed by x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS).).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.2
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• pp.62-66
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• 1986

Ion beam etching of silicon with N2 and Ar gas has been found to cause the band edge to bend downward near the surface in p-type silicon. Rectifying, rather than ohmic contacts are obtained on the structures formed by evaporation of gold and titanium onto ion-bean-etched p-type silicon. The 1/C2 versus V relationship measured at 1MHz is found to be nonlinear for small voltages indicating alteration of the effective doping colse to the silicon surface.