• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.67-67
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• 2007

This study investigated the effect of $H_2$ upon the growth of CNTs by changing the ratios of $H_2$ to Ar during the growth using $C_2H_2$. With higher contents of $H_2$ in Ar, CNTs became longer and thinner, resulting in their higher aspect ratios.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.296-301
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• 2009

An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.12
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• pp.68-75
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• 2005

The effects of the physical properties of primary flow on the performance of a supersonic ejector were investigated. Axisymmetric annular injection type supersonic ejector was used for the study of the effects of molecular weight and the specific heat at constant pressure on the ejection performance. Test gases include; air, $CO_{2}$, Ar, $C_{3}H_{8}$, and $CCl_{2}F_{2}$ for different values of gas properties. As the molecular weight and CP of the primary gas increase, the secondary flow pressure increases at the same primary stagnation pressure and this behavior results from the combined effects of molar specific heat or specific heat ratio.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.77-85
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• 2004

To evaluate the effect of plasma cleaning on the soldering reliability the plasma cleaning using Ar-10vol%$H_2$ gas was applied on a UBM(Under Bump Metallization). The UBM consisted of Au/ Cu/ Ni/ Al layers which were deposited on a Si-wafer with 20 nm/ 4 $\mu\textrm{m}$/ 4 $\mu\textrm{m}$/ 0.4 $\mu\textrm{m}$ thickness respectively. Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-37%Pb solder balls sized of 500 $\mu\textrm{m}$ in diameter were used. Solder balls on the UBM were plasma reflowed under Ar-10%$H_2$ plasma (with or without plasma cleaning). They were compared with air reflowed solder balls with flux. The spreading ratios of plasma reflowed solder with plasma cleaning was 20-40% higher than that of plasma reflowed solder without plasma cleaning. The shear strength of plasma reflowed solder with plasma cleaning was about 58-65MPa. It showed 60-80% higher than that of plasma reflowed solder without plasma cleaning and 15-35% higher than that of air reflowed solder. Thus it was believed that plasma cleaning for the UBM using Ar-10vol%$H_2$ gas was considerably effective for the improvement of the strength of solder ball.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.377-382
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• 1998

Atomic layer deposition(ALD) of amorphous TiN films on $SiO_2$ between 17$0^{\circ}C$ and 21O$^{\circ}C$ has been investigated by alternate supply of reactant sources, Ti[N($C_2,H_5,CH_3)_2]_4$ [tetrakis(ethylmethylamminoltitanium: TEMAT] and $NH_3$. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, $NH_3$. gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 1.6 monolayer(MU per cycle with sufficient pulse times of reactant sources at 20$0^{\circ}C$. The results suggest that film thickness per cycle could be beyond 1 MLicycie in ALD, which were explained by rechemisorption mechanisms of reactant sources. The ideal linear relationship be¬tween number of cycles and film thickness is confirmed. As a results of surface limited reactions of ALD, step cover¬age was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was seperated from $NH_3$ by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4 at%.

• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.594-597
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• 2001

RhodopseudolllOllas palustris P4 was studied for $H_2$ production from glucose in batch culture. Important conditions studied include phosphate concentration, initial pH, temperature, glucose concentration, and gas-phase replacement. Optimal $H_2$ production was observed at 60 - 300 mM of phosphate and 7.8 - 8.6 of initial pH. The effect of culture temperature was negligible When glucose concentration increased from 0.1 to 5% (w/v), $H_2$ production increased up to 2% and remained constant thereafter. Intermittent purging of the reaction botlle with Ar gas stimulated the Hl production by alleviating the inhibition by $H_2$. The maximum productivity was 111.1 ml $H_2$/h-1.

• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.598-601
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• 2001

Citrobacter sp. Y19 was studied for $H_2$ production from glucose in batch culture. Important conditions studied include phosphate concentration, temperature, glucose concentration, and gas-phase replacement. Optimal $H_2$ production was observed at 140 - 180 mM of phosphate and $36^{\circ}C$. When glucose concentration increased from 0.1 to 5% (w/v), $H_2$ production increased up to 2% and remained constant thereafter. Intermittent purging of the reaction bottle with Ar gas stimulated the $H_2$ production by alleviating the inhibition by $H_2$. The maximum productivity was observed to be 113.2 ml $H_2$/h-1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.521-522
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• 2006

In this paper, hybrid air-water discharges were used to develop an optimal condition for providing a high level of water decomposition for hydrogen yield. Electrical and optical phenomena accompanying the discharges were investigated along with feeding gases, flow rates, and point-to-plane electrode gap distance. The primary focus of this experiment was put on the optical emission of the near UV range, with the energy threshold sufficient for water dissociation and excitation. The $OH(A^{2+},'=0\;X^2,"=0$) band's optical emission intensity indicated the presence of plasma chemical reactions involving hydrogen formation. In the gaseous atmosphere saturated with water vapor the OH(A-X) band intensity was relatively high compared to the liquid and transient phases although the optical emission strongly depended on the flow rate and type of feeding gas. In the gaseous phase discharge phenomenon for Ar carrier gas transformed into a gliding arc via the flow rate growth. OH(A-X) band's intensity increased according to the flow rate or residence time of He feeding gas. Reciprocal tendency was acquired for $N_2$ and Ar carrier gases. The peak value of OH(A-X) intensity was observed in the proximity of the water surface, however in the cases of Ar and $N_2$ with 0.5 SLM flow rate peaks shifted to the region below the water surface. Rotational temperature ($T_{rot}$) was estimated to be in the range of 900-3600 K, according to the carrier gas and flow rate, which corresponds to the arc-like-streamer discharge.

• Korean Journal of Materials Research
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• v.28 no.5
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• pp.301-307
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• 2018

A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

• Journal of Information Display
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• v.2 no.4
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• pp.29-33
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• 2001

The luminance and discharge characteristics of an AC PDP may be significantly affected by a small amount of impurity gas in working gas. Impurity gases such as $O_2$, O , C and $H_2$ can be mixed in the manufacturing and lor discharge processes. In this paper, a small amount of impurity gas in AC PDP are introduced intertimally and the relationship between the amount of impurity gas and the luminance/discharge characteristics are investigated. The luminous efficiency decreased seriously with the increase in the partial pressure of impurity gases, especially in $H_2$, $O_2$ and $CO_2$, Under the condition of the impurity gas ratio of 2x $10^{-3}$ for Ar, $N_2$, $H_2$, $CO_2$ and $O_2$, the luminous efficiency decreased to about 8%, 8%, 32%, 36% and 50%, respectively.