• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.197-200
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• 2005

We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8-hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting layer. We manufactured reference structure that has in $ITO/TPD/Alq_3/Al$. Buffer layer effects were compared to reference structure. And we have analyzed out electrical conduction mechanism in $ITO/Alq_3/Al$ device with various temperature.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.638-644
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• 2010

We have carry out numerical simulation of the electric-optical characteristics of organic light emitting diodes with gradient-doped emitting layer which were reported to be effective in improving luminous efficiency and lifetime. In this paper, the basic structure is comprised of ITO/NPB/$Alq_3$:C545T[%]/$Alq_3$/LiF/Al, six devices by separating the emitting layer of $Alq_3$:C545T[%] were studied. As the result, the uniformly-doped devices exhibited superior luminous efficiency-current density characteristics over conventional undoped device. In the case of gradient-doped devices, electric-optical characteristics were improved similar to uniformed-doped devices, unusually the distribution of traped-charge density in the OLED devices was shown as the staircase.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.899-903
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• 2013

We investigated the luminescence properties of $Alq_3$ in the device structure of ITO/CuPc/TPD/$Alq_3$/Al. The CuPc as a hole-injection material and TPD as hole-transport material. Emission properties were measured by varying a layer thickness of CuPc (0 nm to 50 nm), which is the hole-injection layer. As a result, it was found that the hole injection occurs smoothly when the layer thickness was 20 nm among the thicknesses from 0 nm to 50 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.193-194
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• 2009

This report makes an important correction to estimating angular dependent emission pattern of Organic Light-Emitting Diodes (OLEDs). Today, experiments on measuring angular light intensity of OLEDs are conducted without considering the difference between the view angle identified by photodiode and the actual angle being measured. ITO-TPD-$Alq_3$-LiF-Al Organic Light-Emitting Diode was used to find out the degree of the error. In this case, the difference in average was about $1^*$, which is highly significant. Since the difference varies from case to case, the need for adjustment must be evaluated for each case.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 학술대회 논문집 전문대학교육위원
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• pp.171-174
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• 2006

본 연구에서 새로 합성한 적색 도판트 Red-1을 Physical vapor Deposition (PVD) 법을 이용하여 다층구조의 유기 발광 다이오드를 제작하였다. 적층된 유기물 층으로 정공주입층은 4,4',4"-tri [2-naphthyl(phenyl)amino]triphenylamine(2-TNATA) 정공 수송층으로4-4bis [N-(1-napthyl-N-phenyl-amino)biphenyl] (NPB)를 사용하였으며 전자 수송층은 tris (8-quinolinolato)-aluminum ($Alq_3$), 발광층에서의 host 재료로 사용한 물질은 $Alq_3$. 4,4'- N-N'-dicarba zole-biphenyl (CBP), 게스트재료는 Red-1, 정공저지층으로 2,9-dimethyl-4, 7-diphenyl -1 10-phen antroline (BCP), 전자 주입층으로는 lithiumquinolate (Liq)를 사용하여 보다 향상된 전기적, 발광특성을 보이는 소자를 제작하였다. 전하를 주입하는 전극으로 일함수가 큰 투명전극인 ITO (indium-tin-oxide)를 양전극으로, Al을 음전극으로 사용하였다. 그리하여, 발광층 내에서의 host재료 $Alq_3$와 CBP와의 energy transfer의 관점에서 그 특성을 연구하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1664-1667
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• 2007

The belt source evaporation is for the large size AMOLED devices to re-sublimate the organic film deposited on the metal plate. Using the plane source, the PL spectrum of the doped organic film has been studied for the first time. The PL peak of the pure Alq3 film was 512nm and that of the pure Rubrene was 557nm. The PL peak of the 2% Rubrene doped Alq3 film was shifted to $536{\pm}2nm$. The PL peak wavelength measured at the front surface of the film and at the back surface of the film was measured as nearly same as that the doping ratio maintains uniform within the film thickness. In conclusion, the doping control of the organic film becomes real using the belt type plate sublimation deposition.

• 전자공학회논문지 IE
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• 제48권4호
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• pp.25-29
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• 2011

유기 EL소자는 제작이 쉽고 휘도가 높아 CRT와 LED 대신 평판 디스플레이 패널의 광원으로써 많이 연구되어 지고 있으며, OLED 소자중 청색 OLED는 풀컬러 적용 어플리케이션에 적용할 수 있기 때문에 이에 대한 연구가 이루어 지고 있다. 본 연구에서는, 발광 소재로 PBD, Alq3를 사용하여 유기 EL 디바이스의 전기 발광 특성을 측정하였으며, 전류와 휘도는 전압과의 관계에서 알 수 있었고 휘도와 전류의 관계를 제시하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1429-1431
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• 2005

Organic molecular-beam deposition of Mg:Ag thin films with a low Mg concentration on tris (8-hydroxyquinolino) aluminum $(Alq_3)$ layers at room temperature was performed to investigate the feasibility of using Mg:Ag thin films as cathode electrodes in organic light-emitting devices (OLEDs). The effective barrier height of the $Mg:Ag/Alq_3$ heterointerface, determined from current-voltage measurements, was as low as 0.23 eV. These results help improve understanding the electrical properties of the $Mg:Ag/Alq_3$ heterointerfaces in OLEDs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.115-118
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• 2003

Complex impedances with frequency and voltage variation were analyzed in $ITO/Alq_{3}/Al$(100nm)/Al device structure. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by capacitive component. Also, we have evaluated resistance, capacitance and permittivity.