• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.53-54
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• 2013

Nano-multilayered CrAlSiN films consisting of crystalline CrN nanolayers and amorphous AlSiN nanolayers were deposited by cathodic arc plasma deposition. Their oxidation characteristics were studied between 600 and $1000^{\circ}C$ for up to 70 h in air. During their oxidation, the amorphous AlSiN nanolayers crystallized. The formed oxides consisted primarily of $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$. The outer $Al_2O_3$ layer formed by outward diffusion of Al ions. Simultaneously, an inner ($Al_2O_3$, $Cr_2O_3$)-mixed layer formed by the inward diffusion of oxygen ions. $SiO_2$ was present mainly in the lower part of the oxide layer due to its immobility. The CrAlSiN films displayed good oxidation resistance, owing to the formation of oxide crystallites of $Cr_2O_3$, ${\alpha}-Al_2O_3$, and amorphous $SiO_2$.

• 한국재료학회지
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• 제5권7호
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• pp.888-896
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• 1995

Al 금속분말을 zircon sand (ZrSiO$_4$)와 A1$_2$O$_3$혼합체에 첨가하여 반응소결시킴으로써 무수축 Mullite-ZrO$_2$, 요업체를 얻고자 하였다. 반응식, 3(Al+Al$_2$O$_3$)+2ZrSiO$_4$$\longrightarrow$3A1$_2$O$_3$ .2SiO$_2$+2ZrO$_2$에 의하여 ZrO$_2$-강화 Mullite 요업체를 제조하였다. Al 분말은 A1$_2$O$_3$에 대해 0-30 무게 퍼센트까지 대체하였다. 평량한 분말을 볼밀하여 혼합 분쇄한 후, 정수압 성형하여 시편을 제조하고, 온도범위 1450-1$600^{\circ}C$에서 3시간 반응소결시켰다. Al의 충분한 산화를 위해, 한편으로는 125$0^{\circ}C$에서 5시간동안 열처리를 거친후 소성온도로 올리기도 했다. Al을 첨가함으로서 반응은 촉진되었으며, 소성수축도 산화한 Al의 부피팽창에 의해 상쇄되어, 무수축요업체 제조의 가능성을 보였다. 박편모양을 한 비교적 큰 Al분말이 잘 분쇄되지 않음으로 해서, Al이 자리했던 곳에 큰 기공을 남겼다.

• 한국세라믹학회지
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• 제32권4호
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• pp.429-435
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• 1995

Al2O3-SiC-C(ASC) refractory materials were prepared from kaolin using thermit reaction. The mixed powder (A-K) for the thermit reaction was composed of Hadong kaolin, C(graphite) and Al. A-S(SiO2＋C＋Al) composition was also employed to compare with A-K in respect to reactability. As a result of XRD patterns of A-K sample after thermit reaction, and firing at 140$0^{\circ}C$ for 3hrs in Ar atmosphere, it was possible to use as a ASC refractory materials.

• 한국재료학회지
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• 제25권5호
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• pp.233-237
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• 2015

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.170-171
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• 2012

$Fe_2O_3$, Al, Cr과 Si 분말을 고 에너지 볼 밀링해서 나노분말을 제조한 후 고주파유도 가열 활성 연소합성 장치로 1분 이내의 짧은 시간에 합성 및 소결한 $Al_2O_3+4.65(Fe_{0.43}Cr_{0.17}Al_{0.323}Si_{0.077})$, $Al_2O_3$ + 5.33 ($Fe_{0.375}Cr_{0.11}Al_{0.3}Si_{0.075}$), $Al_2O_3$ + 6.15 ($Fe_{0.325}Cr_{0.155}Al_{0.448}Si_{0.072}$), $Al_2O_3$ + 3.3 ($Fe_{0.6}Cr_{0.3}Al_{0.6}$) 소결체 시편을 $700^{\circ}C$의 온도에서 100시간 동안 공기 중에서 산화 및 $N_2-H_20-H_2S$ 혼합 가스 내에서 황화 부식을 실시하였다. 그 결과 산화 및 황화 부식 후에 ${\alpha}-Al_2O_3$가 표면에 생성되어 보호 피막으로 작용하여 우수한 내식성을 보였다.

• 한국세라믹학회지
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• 제35권9호
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• pp.923-932
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• 1998

Al2O3/Al composites were produced by displacement reaction method which was carried out by imm-ersing the sintered silica preform which was prepared form fused silica powder in molten aluminu. an ac-tivation energy of 94kJ/mole was calculated from Al-SiO2 reaction data in 1000-130$0^{\circ}C$ temperature range With increase of reaction temperature the alumina particle in the Al2O3/Al composites produced with pur metal Al showed grain growth and the growth of alumina particle in Al2O3/Al composite produced by using of Mg contained Al alloy was inhibited. The flexural strength of Al2O3/Al composites produced at 100$0^{\circ}C$ showed the highest value as 393 MPa. Flexural strength of the composite fabricated at 85$0^{\circ}C$ showed higher deviation than that of the composite produced at above 100$0^{\circ}C$ Low flexural strength of the composite fa-bricated at 120$0^{\circ}C$ due to the growth of pore and alumina particle size. The hardness of composites de-pended on alumina content in Al2O3/Al composite decreased with increasing of aluminium content in case the same alumina content and increased with increasing of silicon content in composite.

• 한국세라믹학회지
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• 제27권6호
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• pp.799-807
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• 1990

In this study, effects of oxide additives on mechanical properties and microstructure of A1N and A1N polytype ceramics were investigated. Fine A1N powder was synthesized by nitriding alumiuim hydroxide prepared from Al-isopropoxide, at 1350$^{\circ}C$ for 10h in N2 atmosphere. By adding 3w/o Y2O3, 0.56w/o CaO, and 10w/o SiO2 to AlN powder, AlN and AlN polytype ceramics were prepared by hot-pressing under the pressure of 30 MPa at 1800$^{\circ}C$ for 1h. AlN ceramics with no additives formed considerable amount of AlON phase, while AlN ceramics doped with Y2O3 or CaO decreased AlON phase and formed Y-Al or Ca-Al oxide compound. AlN＋10w/o SiO2(＋3w/o Y2O3) composition produced AlON and AlN polytype compound having 21R as a major phase. Room temperature flexural strength of AlN ceramics with no additive was 246MPa, and room temperature flexural strength and critical temperature difference by thermal shock(ΔTc) of AlN ceramics dooped with Y2O3 or CaO were 532MPa/340$^{\circ}C$ and 423MPa/300$^{\circ}C$, respectively. Y2O3 and CaO used as sintering agent played roles of densification and oxygen removal of AlN ceramics, and affected grain growth/grain morphologies of AlN ceramics.

• 한국세라믹학회지
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• 제26권3호
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• pp.416-422
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• 1989

The particle size of synthesized SiC powders was decreased with increasing carbon content when the mixture of carbon and silica was carbonized at 1, 45$0^{\circ}C$ after hydrolysis of the mixture with the ranges of 3.1 to 3.5 in the mole ratio of Carbon/Alkoxide. The reacted fraction of $\beta$-SiC nearly had nothing to do with the mole ratio of Carbon/Alkoxide. When the reaction was made by adding 0.5wt% additives in the composition of 3.1 in the mole ratio of carbon/alkoxide, the additives decreased the yield of $\beta$-SiC and its sequence was Ba2O3>B>Fe>Al>Al2O3>Si. The effect of additives promoted the transformation of $\beta$-SiC to $\alpha$-SiC form and shwoed the increasing tendency of lattice constant. The two colors of $\beta$-SiC powder came out : one was the black grey with addition of Al, Al2O3 and B the other the light grey with addition of Fe, B2O3 and Si.

• 한국결정성장학회지
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• 제5권3호
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• pp.291-298
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• 1995

알루미나 고상소결체와 $CaMgSiO_4$간의 반응에 따른 반응상들의 성장 및 용해 거동을 $1600^{\circ}C$에서 열처리 시간을 변화하여 고찰하였다. 열처리시 알루미나는 $CaMgSiO_4$ 액상에 용융되어 중간에 반응상인 $CaO{\cdot}6Al_2O_3$와 최종 반응상인 $CaMgSiO_4$ 스피넬 형성이 관찰되었다. 중간상인$CaO{\cdot}6Al_2O_3$ 결정은 성장 모양과 용해 모양이 뚜렷하게 구분되었다.

• 한국재료학회지
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• 제15권10호
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• pp.644-651
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• 2005

The thermal analysis of $Al(OH)_3-SiO_2-AIF_3$ system was done. The thermal behaviors of components and the effect of moisture on the formation of mullite were investigated via TG-DTA and XRD analysis. The mixture of $Al(OH)_3,\;SiO_2,\;AIF_3$showed two endothermic peaks with drastic weight loss and one exothermic peak. Fluorotopaz was formed at $800^{\circ}C$ and turned into mullite completely at $1100^{\circ}C$. But the mixture $Al_2O_3$ of or dehydrated $Al(OH)_3$ and $SiO_2$ could not form mullite even at $1200^{\circ}C$ in which the crystalline phases were $\alpha-Al_2O_3$ ana cristobalite. It was found that the synthesized mullite was aciculate shaped single crystalline whisker.