• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.665-669
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• 2015

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using $BBr_3$ liquid source at $930^{\circ}C$. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing $Al_2O_3$. The results gave a carrier lifetime of $110.9{\mu}s$, an open-circuit voltage ($V_{oc}$) of 635 mV at in-situ oxidation and a carrier lifetime of $188.5{\mu}s$, an $V_{oc}$ of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.