• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.19-25
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• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.148-152
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• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1218-1224
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• 2023

We investigated the radiation shielding competence for TeO₂-V₂O₅-MoO₃ glasses. The Phy-X software was used to report the radiation shielding parameters for the present glasses. With an increase in TeO₂ and MoO₃ content, the samples' linear attenuation coefficient improves. However, at low energies, this change is more apparent. At low energy, the present samples have an effective atomic number (Z_eff) that is relatively high (in order of 16.17-24.48 at 0.347 MeV). In addition, the findings demonstrated that the density of the samples is a very critical factor in determining the half value layer (HVL). The minimal HVL for each sample can be found at 0.347 MeV and corresponds to 1.776, 1.519, 1.391, 1.210 and 1.167 cm for Te1 to Te5 respectively. However, the highest HVL of these glasses is recorded at 1.33 MeV, which corresponds to 3.773, 3.365, 3.218, 2.925 and 2.908 cm respectively. The tenth value layer results indicate that the thickness of the specimens needs to be increased in order to shield the photons that have a greater energy. Also, the TVL results demonstrated that the sample with the greatest TeO₂ and MoO₃ concentration has a higher capacity to attenuate photons.

• Korean Chemical Engineering Research
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• v.44 no.4
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• pp.363-368
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• 2006

This study selected the optimal catalyst for the process of producing $C_9$-alcohol by hydrogenating $C_9$-aldehyde, and carried out an experiment in order to establish the operating condition for maximizing the yield of $C_9$-alcohol. The BET surface area and the specific area of copper were most excellent in $CuO/ZnO/Al_2O_3$ (60:30:10 wt％) catalyst produced using acetate as a precursor of copper and $Na_2CO_3$ as a precipitant, and the catalyst also showed the highest performance in $C_9$-aldehyde hydrogenation. Using a trickle bed reactor loaded with optimized catalyst, we attained 94.1 wt％ yield of $C_9$-alcohol under the condition of $175^{\circ}C$, 800 psi and $WHSV=3hr^{-1}$. According to the result of comparing with other catalysts used in the hydrogenation of aldehyde, the catalyst showed similar performance to that of Ni/kieselghur and higher than that of $Cu-Ni-Cr-Na/Al_2O_3$ and $Ni-Mo/Al_2O_3$. According to the result of examining the stability of the catalyst through a long-term catalysis test, the yield of $C_9$-alcohol decreased slowly after around 72 hours due to the increasing production of high boiling-point byproducts.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.211-212
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• 2010

GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$과 $-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

• Journal of Hydrogen and New Energy
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• v.25 no.6
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• pp.570-576
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• 2014

LFG (Land-Fill Gas) includes components of $CH_4$, $CO_2$, $O_2$, $N_2$, and water. The preparation of synthesis gas from LFG as a DME (Dimethyl Ether) feedstock was studied by methane reforming of $CO_2$, $O_2$ and steam over NiO-MgO-$CeO_2$/$Al_2O_3$ catalyst. Our experiments were performed to investigate the effects of methane conversion and syngas ratio on the amount of LFG components over NiO-MgO-$CeO_2$/$Al_2O_3$ catalyst. Results were obtained through the activity reaction experiments at the temperature of $900^{\circ}C$ and GHSV of 4,000. The results were as following; it has generally shown that methane conversion rate increased with the increase of oxygen and carbon dioxide amounts. Highly methane conversion of 92~93% and syngas ratio of approximately 1.0 were obtained in the feed of gas composition flow-rate of 243ml/min of $CH_4$, 241ml/min of $CO_2$, 195ml/min of $O_2$, 48ml/min of $N_2$, and 360ml/min of water, respectively, under reactor pressure of 15 bar for 50 hrs of reaction time. Also, it was shown that catalyst deactivation by coke formation was reduced by excessively adding oxygen and steam as an oxidizer of the methane reforming.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.5-9
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• 2008

Cordierite has a very low thermal expansion coefficient, but has problem that it has a weak mechanical strength and is apt to be attacked by acid such as sulfur for using as a diesel particulate filter support. The physical properties of $ZrTiO_4$ modified with $SiO_2,\;Al_2O_3$, MoOx, $Cr_2O_3\;and\;Nb_2O_5$ were investigated with XRD, SEM, UTM and thermal expansion, etc. in this paper. $ZrTiO_4$ powder was synthesized as a monoclinic structure with processes that starting materials of $TiO_2\;and\;ZrO_2$ were mixed with ball mill and calcined above $1240^{\circ}C$ for 3 hr. Additive modified $ZrTiO_4$ specimens for flexural strength and thermal expansion measurement were obtained by mixing $ZrTiO_4$ powder with additives, pressing and firing at $1300^{\circ}C$ for 3 hr. The porosity of additive modified $ZrTiO_4$ decreased monotonically with increasing additive content by 5 wt% regardless of additive types and saturated for further increase of additive by 10wt. The flexural strength of $Al_2O_3$ (5, 10 wt%) modified $ZrTiO_4$ shows a large increase, but that of other additives modified $ZrTiO_4$ decreased. The thermal expansion coefficient of additive modified $ZrTiO_4$ except $Nb_2O_5$ decreased continuously with the content of additive. In particular, the lowest thermal expansion coefficient of $ZrTiO_4$ was obtained for the additive of $SiO_2$.

• YAKHAK HOEJI
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• v.49 no.6
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• pp.443-448
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• 2005

Diosgenin (25 (R) - spirost-5-en-3$\beta$ -ol) was oxidized with 2,3-dichloro -5,6-dicyano-1,4-benzoquinone to form 25(R)-1,4,6-spirostatrien-3-one (1) as rigid cyclic $\alpha$,$\beta$-unsaturated carbonyl compound. This compound was reacted with $H_{2}O_{2}$, m-chloroperoxybenzoic acid (mCPBA), NaOCl in the presence with (R,R)- or (S,S)-Jacobsen catalyst, tert-butyl-hydroperoxide (TBHP) in Mo$(CO)_{6}$, and in VO $(acac)_{2}$ catalyst, respectively, 25(R) -1,4,6-spirostatrien -3-one (1) was reduced with $NaBH_{4}$ L-Selectride, $LiAIH_{4}$,$BH_{3}$ $\cdot$$(CH_{3})_{2}S$, Superhydride, Red-Al, and lithium tri-tert-butoxyaluminium hydride. And 25(R)-4,6-spirostadien-3$\beta$-ol (4) was treated with $H_{2}O_{2}$, mCPBA, TBHP in D - (-) - and L-(+)-diisopropyltar-trate and $Ti(OiPr)_{4}$ condition (Sharpless asymmetric epoxidation), TBHP in $Mo(CO)_{6}$, and in $VO(acac)_{2}$ catalyst, respectively.