• ETRI Journal
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• 제28권6호
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• Corrosion Science and Technology
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• 제12권3호
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• 한국세라믹학회지
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• 제28권12호
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• pp.1005-1011
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• 1991

Y-Ba-Cu-O thin films were in-situ fabricated on LaAlO3(100) substrates using the second harmonics of a pulsed Nd:YAG laser. Thin films were deposited under 200 (mtorr) of oxygen atmosphere, when the substrate temperature was changed between 67$0^{\circ}C$ and 82$0^{\circ}C$. After deposition, the films were in-situ annealed at 50$0^{\circ}C$ under 2/3 bar of oxygen pressure. We showed that the deposition temperature affects the formation of superconducting phase, the resistance, and the surface morphology. The Y-Ba-Cu-O thin films deposited at 76$0^{\circ}C$ show the zero resistance critical temperature of 85 K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.27-28
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• 2009

In this study, we have fabricated the 3 wt% $Li_2CO3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd printed $Al_2O_3$ substrates for the LTCCs (Low Temperature Co-fired Ceramics) applications. From the X-ray diffraion analysis, 3 wt% $Li_2CO3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at 900 $^{\circ}C$ have perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO3$ doped BST thick films were measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO3$ doped BST thick films, we employed the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO3$ doped BST thick films were measured from 20 Hz to 1 MHz at the various temperatures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.37-37
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• 2008

에어로졸데포지션법을 이용하여 집적화 기판을 위한 $Al_2O_3$-PMMA 복합체 후막을 상온에서 구리 기판 위 에 제조하였다. XRD, FT-IR 분석을 통해 코팅된 막은 $Al_2O_3$와 PMMA의 혼합물로 존재함을 확인하였으며 성막 중 $Al_2O_3$. PMMA의 상호작용과 PMMA 파우더의 거동에 대한 분석을 통해 $Al_2O_3$-PMMA 복할체 후막의 성막 양상을 확인할 수 있었다. 또한 기판 거칠기에 따라 초기 계면의 양상이 달라질 수 있음을 확인하였고 이러한 초기 계면의 상태가 $Al_2O_3$-PMMA 복합체 후막의 제조에 있어 매우 중요함을 알 수 있었다. 본 연구에서는 에어로졸데포지션법을 이용한 $Al_2O_3$-PMMA 복합체 후막의 성막 양상을 통해 세라믹-폴리머 복합체의 제조에 있어서의 주요 변수들을 알아보고 $Al_2O_3$-PMMA 복합체 후막의 전기적인 특성을 확인하였다.

• 센서학회지
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• 제11권2호
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• pp.118-123
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• 2002

$ZnGa_2O_4$ 형광체 박막을 기판 온도를 $550^{\circ}C$에 고정시키고 산소 분압을 100, 200, 300 mTorr로 변화시키며 $Al_2O_3$(0001) 기판 위에 펄스 레이저 증착법을 이용하여 증착하였다. 다른 산소 분압에서 성장한 박막들의 미세 결정구조와 형광특성을 조사하였으며, 산소분압이 증가할수록 박막의 결정성이 변화하였으며 박막의 조성비가 다름을 형광특성을 통하여 알 수 있었다. 발광 스펙트럼은 460 nm에서 최고 피크값 을 나타내었으며, 300 nm에서 600 nm까지 갖는 넓은 밴드의 형광 특성을 나타내었다. 최적의 조건에서 성장된 박막의 형광 밝기를 고려해볼 때 $Al_2O_3$(0001) 기관이 우수한 $ZnGa_2O_4$ 형광체 박막을 성장시킬 수 있는 기판들 중 하나임을 확인하였다.

• 대한전기학회논문지
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• 제35권10호
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• pp.465-472
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• 1986

The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• 한국재료학회지
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• 제14권7호
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• pp.482-488
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• 2004

$SiO_2$ nanowires were synthesized using the vapor evaporation method. Grown nanowires had a different shapes by kind of substrates. Diameters and lengths of the nanowires increased with increasing growth temperature and time. Mean diameters and lengths of $SiO_2$ nanowire were different by kind of substrates. These variations were attributed to nanowire densities on the substrates. The kind of substrates affected microstructure and PL properties of grown nanowires. In case of $Al_{2}O_3$ and quartz substrates, additional $O_2$ were supported during growth stages, and made a nucleation site. Therefore relative narrow nanowire was grown on $Al_{2}O_3$ and quartz substrates. Optical property were measured by photoluminescence spectroscopy. Relatively broad peak was obtained and mean peak positioned at 450 and 420nm. however in case of quartz substrates, mean peak positioned at 370nm. These peak shift was contributed to the size and substrate effects.

• 한국진공학회지
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• 제19권1호
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• pp.58-65
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• 2010

먼저 RF 마그네트론 스퍼터링법을 이용하여 사파이어 기판 위에 AlN 박막을 증착하였다. AlN 공급원으로는 분말소결된 AlN 타겟을 적용하였다. 플라즈마 파워를 50에서 110 W로 증가시켰을 때 AlN 층의 두께는 선형적으로 증가하였다. 그러나 동작압력을 3에서 10 mTorr로 증가시켰을 때는 동작기체인 아르곤 양이 증가함에 따라 AlN 타겟으로부터 스퍼터링되어 나온 AlN 입자들의 평균자유행정의 거리가 감소하기 때문에 AlN 층의 두께는 약간 감소하였다. 질소 기체를 아르곤과 섞어주었을 때는 질소의 낮은 스퍼터링 효율에 의해서 AlN의 두께는 크게 감소하였다. 다음으로는 ZnO 형판 위에 AlN를 증착하였다. 그러나 700도 이상의 열처리에 의해서 AlN와 ZnO의 계면이 약간 분리되어 계면의 열적 안정성이 낮다는 결과를 얻었다. 게다가 스퍼터링으로 증착한 AlN 박막의 나쁜 결정성으로 인하여 700도에서 MOCVD의 반응기 기체인 수소와 암모니아에 의해서 AlN 밑의 ZnO 층이 분해되는 현상도 관찰하였다. 그리고 900도 이상에서는 ZnO가 완전히 분해되어 AlN 박막이 완전히 분리되었다.