• Journal of Korea Foundry Society
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• v.18 no.4
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• pp.373-382
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• 1998

Particulate reinforced aluminum alloys produced by indirect squeeze casting are difficult to shape by cutting or milling. Therefore near net shape forming of complex shapes is of high economic and technical interest. The complex shape products of $SiC_p/6061$ Al composites are fabricated by the melt-stirring and indirect squeeze casting process. The mold temperatures are $200^{\circ}C$ and $300^{\circ}C$ and applied pressures are 70, 100, and 130 MPa. The volume fractions of the reinforcements are in the range of 5 vol% to 15 vol%. The reinforcement dispersion state are observed using on optical microscope. By employing observed results systematically a correlation is demonstrated among the microstructure, particles behavior, mechanical properties and processing parameters for an optimum melt-stirring(compocasting) and indirect squeeze casting process of MMCs. A procedure to establish the optimum squeeze casting of Al-MMCs is proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• New & Renewable Energy
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• v.2 no.3
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Journal of Powder Materials
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• v.13 no.1 s.54
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• pp.39-45
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• 2006

The $Al/SiC_p$ particle reinforced composite fabricated by a powder-in sheath rolling (PSR) method was severely. deformed by the accumulative roll-bonding (ARB) process. The ARB process was performed up to 8 cycles at ambient temperature without lubricant. The ARBed composite exhibited an ulbricant. grained structure similar to the other ARBed bulky materials. Tensile strength of the composite increased gradually with the number of ARB cycles, but from the 6th cycle it rather decreased slightly. These characteristics of the composite were somewhat different from those of Al powder compact fabricated by the same procedures. The difference in microstructure and mechanical properties between Al powder compact and the composite was discussed.

• Composites Research
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• v.15 no.1
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• pp.32-40
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• 2002

This study developed fabrication process of $SiC_p/Al$ metal matrix composites as electronic packaging materials by squeeze casting method. The $SiC_p$ preform were fabricated in newly designed preform mold using about 0.8 % of inorganic binder(SiO$_2$) and 5 vol.% of $Al_2O_3$fiber. To infiltrate the molten metal into the preform, fabrication condition such as the temperature and the pressure were selected. Applying the fabrication conditions, heat transfer analysis were preformed using finite element method and thus analyzed the temperature distribution and cooling characteristic during the squeeze casting. For the fabricated composites, impact toughness and thermal expansion coefficient were measured. The metal matrix composites developed in this study have 0.2~0.3 J impact toughness, $8~10 ppm/^{\circ}C$ thermal expansion coefficient and $2.9~3.0g/cm^3$density which is appropriate properties for electronic packaging application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.66-69
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• 1989

After reviewing previous work done on two piezoelectric thin films(PZT, ZnO), ZnO thin piezofim of 1-3UM is fabricated by sputtering on the different substrates(i. e., P+Si/N-Si, SiO2/P+Si/ N-Si, Al/SiO2/ P+Si/ N+Si). The result shows that ZnO piezofilm on the Al has the best c-axis orientation. One of applications for the ZnO piezofilm as an microvalve to control liquid flow is introduced, and which can be controlled electrically and remotely.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1993.11a
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• pp.32-33
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• 1993

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1996.11a
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• pp.30-30
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• 1996