• 한국재료학회지
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• 제21권2호
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.168.2-168.2
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• 2015

We observed the temperature-dependent evolution and behavior of P3HT type-II phase during a real time annealing process from a cryo-cooled low temperature in the absence and presence of an Al electrode. A poly (3-hexylthiophene) (P3HT) Type-II phase in the P3HT:PCBM films started to form near at $-10^{\circ}C$, regardless of Al layer presence. In the absence of an Al layer, type-II phase was extinct at $30^{\circ}C$. However, the extinction temperature was extended to $50^{\circ}C$ in the presence of the Al layer. Simultaneously, combined with the type-II phase, a 1:3 ordered P3HT type-II (1/3,0,0) super-lattice peak evolved. These type-II domains tended to be formed near the Al electrode layer with higher aligned status than host P3HT crystals.

• 한국진공학회지
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• 제11권3호
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• pp.135-140
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• 2002

본 논문에서는 p-type (100)Si, (100)MgO 그리고 MgO/si 기판 위에 RF Magnetron sputtering 법으로 $Ba_{0.5}Sr_{0.5}TiO_3$(BST)박막을 증착하였다. BST 박막 증착 후 RTA(Rapid Thermal Annealing)를 이용하여 $600^{\circ}C$에서 산소분위기로 1분간 고온 급속 열처리를 하였다. 증착된 BST박막의 결정화를 조사하기 위해 XRD(X-Ray Diffraction)측정을 한 결과 모든 기판에서 (110) $Ba_{0.5}Sr_{0.5}TiO_3$(의 주피크가 관찰되어졌고, 열처리 후 재결정화에 기인하여 피크 세기가 증가함을 관찰할 수 있었다. Al 전극을 이용한 커패시터 제작 후 측정한 C-V(Capacitance-Voltage) 특성에서 각각의 기판에서 측정된 커패시턴스 값으로 계산된 유전율은 120(bare Si), 305(Mgo/Si) 그리고 310(MgO)이었다. 누설 전류 특성에서는 0.3 MV/cm이내의 인가전계에서 1 $\mu\textrm{A/cm}^2$ 이하의 안정된 값을 보여주었다. 결론적으로 MgO 버퍼층을 이용한 기판이 BST 박막의 증착을 위한 기판으로써 효과적임을 알 수 있었다.

• 대한치과보철학회지
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• 제34권1호
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• pp.169-186
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• 1996

The purpose of this study was to investigate the mechanical properities and biocompatibility with crystallization temperature and time of a bioactive glass-ceramic system $41.4wt%SiO_{2}-35.0wt%CaO-3.0wt%MgO-12.0wt%P_{2}O_{5}-8.6wt%Al_{2}O_{3}$ with same molar percent of $Al_{2}O_{3}\;and\;P_{2}O_{5}$. The crystallization behaviors were investigated with DTA, XRD and SEM. Fracture toughness with the change of crystallization temperature and time was measured by indentation fracture method. Also, biocompatibility was evaluated by culture of mouse fibroblast cell line L929. The results obtained were as follows ; 1. The major crystalline phases were apatite and anorthite, and relative intensity of anorthite phase was increased at $1004^{\circ}C$. 2. The hardness and fracture toughness were gradually increased with the increase in ceraming temperature to $1004^{\circ}C$. 3. When the glass ceramic was heat-treated for 4 hours at ceraming temperature of $1004^{\circ}C$, hardness and fracture toughness showed the maximum values $578.84k/mm^2\;and\;2.07MPa\;m^{1/2}$, respectively. 4. The growth rate and cytotoxic of L929 fibroblast cells for bioactive glass ceramic were better than those of stainless steel and titanium.

• 비파괴검사학회지
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• 제18권2호
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• pp.112-120
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• 1998

입자 보강 복합재료의 부피분율을 평가하기 위한 와전류 비파괴 방법을 제시하였다. 제안된 방법은 복합재의 미시구조를 설명할 수 있는 이론 모델과 와전류에 의한 전기전도도 측정을 필요로 한다. 측정한 전도도를 이론 예측값과 같게 두면 미지의 입자 부피분율이 계산된다. Mori-Tanaka 방법에 기초한 전도도 해석 모델이 소개되어 있다. 이러한 접근 방법을 SiC 입자 보강 Al 기지 ($SiC_p/Al$) 복합재에 적용하였다. 이방법으로 보강재의 부피분율을 비교적 정확하게 결정할 수 있었다. 금속간 화합물이 부피분율 평가에 미치는 영향을 논하였으며, 또한 금속간 화합물의 전도도와 기하학적 성질이 보강 입자와 같은 경우, 이 두 상의 총 부피분율을 결정할 수 있는 방법을 제시하였다.

• 한국주조공학회지
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• 제12권3호
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• pp.210-219
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• 1992

The measurement of the apparent and tap density for Al-Pb-X(Sn,Sn-Si) powders produced by centrifugal atomizer showed that the larger theoretically calculated densities the larger those densities. And tap densities were not over 50% of the theoretical densities. The nip angle of Al-5wt%Pb alloy powders produced with 38000 r.p.m. of disk rotation was $3^{\circ}$ degree larger than that of Al-8.5wt%Pb-3wt%Sn(-4wt%Si, 8wt%Si) with 50000 r.p.m. The effects of roll gap and rolling speed on thickness and density of the single strips by rolling were that rolling speed increasing the thickness and density of strip decreased and roll gap increasing, the thickness of strip increased but the density decresed. The compactibility of Al-Pb-X with Al by rerolling showed that the coarse powder-strips were better than fine powder-strips. From the SEM study with EDX analysis on the sintered strips, it was found that Pb and Sn were segregated with maximum size $5{\mu}m$, and Si existed surrounding the segregation zone. After sintering the clad strips at $500^{\circ}C$, the pores, which were spherical with $5{\mu}m$ of mean diameter, partly remained around the particles of alloy powders area, while completely disappeared at clad interface. The hardness of strips of alloy powders decreased linearly with increasing sintering temperature.

• Advances in materials Research
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• 제5권1호
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• pp.55-66
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• 2016

This paper describes a study on the effects of $Mg_2Si_{(p)}$ addition on the microstructure, porosity, and mechanical properties namely hardness and tensile properties of AA332 composite. Each composite respectively contains 5, 10, 15, and 20 wt% reinforcement particles developed by a stir-casting. The molten composite was stirred at 600 rpm and melted at $900^{\circ}C{\pm}5^{\circ}C$. The $Mg_2Si$ particles were wrapped in an aluminum foil to keep them from burning when melting. The findings revealed that the microstructure of $Mg_2Si_{(p)}/AA332$ consists of ${\alpha}$-Al, binary eutectic ($Al+Mg_2Si$), $Mg_2Si$ particles, and intermetallic compound. The intermetallic compound was identified as Fe-rich and Cu-rich, formed as polygonal or blocky, Chinese script, needle-like, and polyhendrons or "skeleton like". The porosity of $Mg_2Si_{(p)}/AA332$ composite increased from 8-10% and the density decreased from 9-12% from as-cast. Mechanical properties such as hardness increased for over 42% from as-cast and the highest UTS, elongation, and maximum Q.I were achieved in the sample of 10% $Mg_2Si$. The study concludes that combined with AA332, the amount of 10 wt% of$Mg_2Si$ is a suitable reinforcement quantity with the combination ofAA332.

• 동력기계공학회지
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• 제20권3호
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• pp.17-21
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• 2016

The corrosion behavior of aluminum alloys in the $H_2SO_4$ solution was investigated based on potentiodynamic techniques. Electrochemical properties, such as corrosion potential($E_c$), passive potential($E_p$), corrosion current density($I_c$), corrosion rate(mpy), of Al-Mg-Si, Al-Cu-Si and Al-Si alloys were characterized at room temperature. Passive aluminum oxide film, which including $Al_2(SO_4)_3$ and $3Al_2O_34SO_38H_2O$, were uniformly formed on the surface via the reaction of Al with $SO{_3}^{2-}$ or $SO{_4}^{2-}$ ions in the $H_2SO_4$ solution and the dependence of the corrosion behavior on the alloying element was discussed. The selective leaching of alloy element increased with increasing Cu content in the aluminum alloys.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1090-1095
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• 2008

The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.57-61
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• 2011

To develop high efficiency crystalline solar cells, the rear surface passivation is very important. In this paper, $Al_2O_3$ films deposited by thermal ALD(atomic layer deposition) method were studied for rear surface passivation of crystalline solar cells and their passivation properties were evaluated. After the deposition of $Al_2O_3$ films on p-type Si wafers, the lifetime was increased very much due to the reduction of interface state density and the field effects of the negative fixed charge in the films. Also, optimum annealing condition and effects of SiNx capping layer were investigated. The best lifetime was obtained when the films were annealed at $400^{\circ}C$ for 15min. And the lifetime degradation of the $Al_2O_3$ films with SiNx capping layers was improved compared to those without the capping layers.