• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.855-856
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• 2006

In the present work, hot workability of particulate-reinforced Al6061-20%SiC composite produced by direct hot extrusion technique was studied. Uniaxial hot compression test at various temperatures and strain rates was used and the workability behavior was evaluated from the flow curves and the attendant microstructures. It was shown that the presence of SiC particles in the soft Al6061 matrix deteriorates the hot workability. Bulging of the specimens and flow lines were observed, which indicate the plastic instability during hot working. Microstructure of the composites after hot deformation was found to be heterogeneous, i.e. the reinforcement clusters were observed at the flow lines. The mechanism of deformation was found to be controlled primarily by dynamic recrystallization.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.999-1006
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• 1993

Si3N4(p)-SiC(p) composites were prepared by gas pressure sintering at 190$0^{\circ}C$ for 1 hour. $\alpha$-SiC with average particle size of 0.48${\mu}{\textrm}{m}$ were dispersed from zero to 50vol% in $\alpha$-Si3N4 with average particle size of 0.5${\mu}{\textrm}{m}$. Y2O3-Al2O3 system was used as sintering aids. When 10vol% of SiC was added to Si3N4, optimum mechanical properties were observed; relative density of 98.8%, flextural strength of 930MPa, fracture toughness of 5.9MPa.m1/2 and hardness value of 1429kg/$\textrm{mm}^2$. Grain growth of $\beta$-Si3N4 was inhibited as the amount of added SiC was increased. SiC particles were found inside the $\beta$-Si3N4 intragrains in case of 10, 20 and 30vol%SiC added composites.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.615-622
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• 1993

In order to increase chemical durability of thin films in binary system B2O3-SiO2 and Al2O3-SiO2 on the slide glass by the dip-coating technique from TEOS(Tetraethyl Orthosilicate) and boric acid or aluminum nitrate, phosphoric acid(5~20mol%) was added, respectively. Corrosion of acid and alkali of samples treated with 1N, HCl, NaOH and distilled water at 10$0^{\circ}C$ for 15 minute, were measured IR transmittance and variance of transmittance at visible range. Surface structure of thin film was investigated with SEM and formation of crystal phase according to additiion of phosphoric acid was measrued with XRD. In Al2O3-SiO2 system, change of remarkable characteristic was not obtained at the addition of P2O5 but transmittance of thin film was decreased with addition of P2O5 in B2O3-SiO2 system.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.89-92
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• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.176-184
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• 1993

The glasses, which the $\beta$-spodumene as the principal crystalline phase could be precipitated, were melted by adding >, $P_2O_5, TiO_2, ZrO_2 in the Li_2O-Al_2O_3-SiO_2$ system. In order to achieve the glass-ceramic body of near-theoritical density by sintering method, the optimum condition of heat treatment, the effect of glass powder size and the properties were investigated by DTA, XRD, bulk density, thermal expansion and SEM. Addition of $P_20_5$ imProved the tendency of sintering and the sample with 9wt% $P_20_5$ content was the most dense OOdy by sintering method. The optimum condition of heat treatmemt was sintered for densitification at $740^{\circ}C$ and crystallized at $950^{\circ}C$. In the optimum condition, the relative density was above 90% and the thermal expansion was negative about $-1{\times}10^{-7}/^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• Journal of the Korean Society for Nondestructive Testing
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• v.18 no.2
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• pp.103-111
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• 1998

A nondestructive ultrasonic technique is presented for estimating the reinforcement volume fractions of particulate composites. The proposed technique employs a theoretical model which accounts for composite microstructures, together with a measurement of ultrasonic velocity to determine the reinforcement volume fractions. The approach is used for a wide range of SiC particulate reinforced Al matrix ($SiC_p/Al$) composites. The method is considered to be reliable in determining the reinforcement volume fractions. The technique could be adopted in a production unit for the quality assessment of the metal matrix particulate composite extrusions.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.9
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• pp.2181-2193
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• 1995

The effective elasticity and conduction of composite materials containing arbitrarily oriented multiple phases has been analyzed using the concept of orientation-dependent average fields and concentration factors. The analysis provided closed form expressions for the effective stiffnesses and conductivities. Under the prescribed boundary conditions, the concentration factors were evaluated by the equivalent inclusion principle, through which the interaction between various phases is approximated by the Mori-Tanaka mean-field approximation. SiC particulate(SiC$_{p}$) reinforce aluminum(Al) matrix composites were fabricated and their elastic constants and electrical conductivities were measured together with a careful study of their microstructure. The measured properties showed a systematic anisotropy and this behavior could be attributed to the preferred orientation of SiC$_{p}$. The theoretical model developed was applied to the computation of the anisotropic properties of these composites. Both two-phase and three-phase composites were considered based on the microstructural information. The SiC$_{p}$ was modeled as an ellipsoid with planar random orientation distribution in the extruded Al/SiC$_{p}$ composites. The effect of extraneous phase such as intermetallic compounds was also investigated.tigated.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.233-237
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• 2015

In order to investigate the potassium (K) gettering, Al-1%Si/$SiO_2$/PSG multilevel thin films were fabricated. Al-1%Si thin films and $SiO_2$/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the $SiO_2$/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the $SiO_2$/PSG passivation layers, and especially the interface gettering at the $SiO_2$/PSG and at the Al-1%Si/$SiO_2$ interfaces was observed. Potassium gettering in Al-1%Si/$SiO_2$/PSG multilevel thin films is considered to be caused by a segregation type of gettering.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1997.04a
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• pp.33-33
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• 1997